BC847BLD
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
Features
• Low Deviation in Base-Emitter Voltage
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free by Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case material: Molded Plastic. “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
C
12
3
E
B
Schematic & Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6 V
Output Current - Continuous (Note 3) IC 200 mA
Peak Collector Current ICM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation (Note 3) Pd 300 mW
Power Deration Pder 2.4 mW/°C
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Ambient Air (Note 3) RθJA 417 °C/W
Operating and Storage Junction Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30824 Rev. 4 - 2 1 of 4
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BC847BLD
© Diodes Incorporated
Electrical Characteristics: NPN Transistor @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V(BR)CBO 50 — — V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 45 — — V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6 — — V IE = 10μA, IC = 0
Collector Cutoff Current ICEX — — 15 nA
VCE = 50V, VEB(OFF) = 3.0V
Base Cutoff Current (IBEX) IBL — — 15 nA
VCE = 40V, VEB(OFF) = 3.0V
15 nA
VCB = 40V, IE = 0
Collector-Base Cut Off Current — —
ICBO 5 μA VCB = 30V, TA = 150oC
Collector-Emitter Cut Off Current, IO(OFF) I
CEO — — 50 nA
VCE = 40V, IB = 0
Emitter-Base Cut Off Current IEBO — — 50 nA
VEB = 5V, IC = 0
ON CHARACTERISTICS (Note 4) 180 — — —
VCE = 5V, IC = 100μA
150 — — —
VCE = 5V, IC = 500μA
220 — — —
VCE = 5V, IC = 1mA
DS30824 Rev. 4 - 2 2 of 4
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BC847BLD
© Diodes Incorporated
220 — — —
VCE = 5V, IC = 2mA
150 — — —
VCE = 5V, IC = 5mA
DC Current Gain hfe
150 — — —
VCE = 5V, IC = 10mA
— 0.09 0.18 V
IC = 10mA, IB = 0.5mA
Collector-Emitter Saturation Voltage VCE(SAT) — 0.2 0.4 V
IC = 100mA, IB = 5mA
Base-Emitter Turn-On Voltage VBE(ON) 647 657 667 mV
VCE = 5V, IC = 2mA
— — 0.8 V
IC = 10mA, IB = 0.5mA
Base-Emitter Saturation Voltage VBE(SAT) — — 0.9 V
IC = 100mA, IB = 5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance COBO — 3 — pF
VCB = 5.0V, f = 1.0 MHz,
IE = 0
Input Impedance hie — 4.5 — KΩ
Voltage Feedback Ratio hre — 2 — x 10E-4
Small Signal Current Gain hfe — 200 — —
Output Admittance hoe — 30 — μS
VCE = 5.0V, IC = 2mA,
f = 1.0KHz
Current Gain-Bandwidth Product fT 100 —
— MHz VCE = 20V, IC = 10 mA,
f = 100 MHz
Noise Figure NF — — 10 dB VCE = 5V, IC = 100µA,
RS = 1KΩ, f = 1kHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150 175
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Am bien t Temperat ure
A
150
200
250
300
350
0
R
θ
JA
= 417 C/W
o
110
100 1,000
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical h vs. I
C
FE C
hDC CURRENT GAIN
FE,
0
50
100
150
200
250
300
350
400
450
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V= 5V
C E
110 100 1,000
V
C
O
LLE
C
T
O
R
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT),
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical V vs. I
C
CE(SAT) C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
I/I=10
cb
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = 125°C
A
T = -55°C
A
11
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Typical I vs. V
CE
CCE
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2
I = 4mA
b
I 1.5mA
b
I = 1mA
b
I = 0.5mA
b
I = 2mA
b
I 3.5mA
b
=
I = 3mA
b
I = 4.5mA
b
I 2.5mA
b
=
I 5mA
b
=
110 100 1,000
V BASE EMI
T
T
E
R
SATURATION VOLTAGE (V)
BE(SAT),
I , COLLECTOR CURRENT (mA)
Fi g. 6 Typica l V vs. I
C
BE(SAT) C
00.1
I/I=10
cb
T = -55°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
110 100 1,000
V BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE,
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical V vs. I
C
BE C
00.1
V= 1V
CE
T = -55°C
A
T = 150°C
A
T = 85°C
A
T = 125°C
A
T = 25°C
A
Ordering Information (Note 5)
DS30824 Rev. 4 - 2 3 of 4
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BC847BLD
© Diodes Incorporated
Device Packaging Shipping
BC847BLD-7 SOT-23 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KLD = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
KLD
YM
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Mechanical Details
SOT-23
A
M
JL
D
F
BC
H
K
G
K1
Dim Min Max Typ
A
0.37 0.51 0.40
B
1.20 1.40 1.30
C
2.30
DS30824 Rev. 4 - 2 4 of 4
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BC847BLD
© Diodes Incorporated
2.50 2.40
D
0.89 1.03 0.915
F
0.45 0.60 0.535
G
1.78 2.05 1.83
H
2.80 3.00 2.90
J
0.013 0.10 0.05
K
0.903 1.10 1.00
K1
- - 0.400
L
0.45 0.61 0.55
M
0.085 0.18 0.11
α
0° 8° -
All Dimensions in mm
Suggested Pad Layout
XE
Y
C
Z
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
