©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
August 2006
FDJ1028N Rev. B3 (W)
FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench
®
MOSFET
FDJ1028N
N-Channel 2.5 Vgs Specified PowerTrench
®
MOSFET
Features
■
3.2 A, 20 V. R
DS(ON)
= 90 m
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 130 m
Ω
@ V
GS
= 2.5 V
■
Low gate charge
■
High performance trench technology for extremely low
R
DS(ON)
■
FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
Applications
■
Battery management
General Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the R
DS(ON)
and thermal properties of the device are
optimized for battery power management applications.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Packge Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
±
12 V
I
D
Drain Current – Continuous (Note 1a) 3.2 A
– Pulsed 12
P
D
Power Dissipation for single Operation (Note 1a) 1.5 W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 80
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case 5
Device Marking Device Reel Size Tape width Quantity
.F FDJ1028N 7" 8mm 3000 units
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
S1 S2 G2
G1
S1
S2
2
www.fairchildsemi.com
FDJ1028N Rev. B3 (W)
FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench
®
MOSFET
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 250
µ
A20 V
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C13mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1
µ
A
I
GSS
Gate–Body Leakage V
GS
=
±
12 V, V
DS
= 0 V
±
100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250
µ
A 0.6 1.0 1.5 V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C–3mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 3.2 A
V
GS
= 2.5 V, I
D
= 2.7 A
V
GS
= 4.5 V, I
D
= 3.2A, T
J
= 125
°
C
70
100
83
90
130
132
m
Ω
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 3.2 A 7.5 S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
200 pF
C
oss
Output Capacitance 50 pF
C
rss
Reverse Transfer Capacitance 30 pF
R
G
Gate Resistance
f = 1.0 MHz 3
Ω
Switching Characteristics
(Note 2)
t
d(on)
Tu r n–On Delay Time V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
714ns
t
r
Tu r n–On Rise Time 816ns
t
d(off)
Tu r n–Off Delay Time 11 20 ns
t
f
Tu r n–Off Fall Time 24ns
Q
g
Total Gate Charge V
DS
= 10 V, I
D
= 3.2 A,
V
GS
= 4.5 V
23nC
Q
gs
Gate–Source Charge 0.4 nC
Q
gd
Gate–Drain Charge 1.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 1.25 A
V
SD
Drain–Source Diode Forward Voltage V
GS
= 0 V, I
S
= 1.25 A (Note 2) 0.8 1.2 V
t
rr
Diode Reverse Recovery Time I
F
= 3.2 A,
d
iF
/d
t
= 100 A/µs
11 nS
Q
rr
Diode Reverse Recovery Charge 2.5 nC
a)
80°C/W when mounted on a
1in
2
pad of 2 oz copper (Single
Operation).
b)
140°C/W when mounted on a
minimum pad of 2 oz copper
(Single Operation).
3
www.fairchildsemi.com
FDJ1028N Rev. B3 (W)
FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench
®
MOSFET
Typical Characteristics
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
0
2
4
6
8
10
12
0 0.5 1 1.5 2 2.5 3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
3.0V
2.5V
3.5V
V
GS
= 4.5V
2.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
024681012
VGS = 2.5V
4.0V
3.5V
3.0V
4.5V
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
ID = 3.2A
VGS = 4.5V
0.04
0.08
0.12
0.16
0.2
0.24
0.28
12345
ID = 1.6A
TA = 125°C
TA = 25°C
0
2
4
6
8
10
1 1.5 2 2.5 3 3.5
TA = -55°C 25°C
125°C
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
T
A
= 125°C
25°C
-55°C
V
GS
= 0V
4www.fairchildsemi.com
FDJ1028N Rev. B3 (W)
FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET
Typical Characteristics
Q
g
, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
t
1
, TIME (sec)
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
I
D
= 3.2A
V
DS
= 5V
15V
10V
0
50
100
150
200
250
300
051015 20
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
0.01
0.1
1
10
100
0.1 1 10 100
DC 10s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 140°C/W
T
A
= 25°C
10ms
1ms
1s
100µs
0
2
4
6
8
10
0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE
RθJA = 140°C/W
TA = 25°C
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 140 °C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
5www.fairchildsemi.com
FDJ1028N Rev. B3 (W)
FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET
Dimensional Outline and Pad Layout
Bottom View
Top View
Recommended Landing Pattern
13
(0.24)
(0.18)
(0.46) (0.50)
(0.73)
0.30
0.20
PKG
DRAIN
DRAIN 1 DRAIN 2
PKG
C
L
C
L
64
13
1.75
1.55
1.70
1.50 A
AMB
B
0.50
0.275
0.125
0.075
(0.20)
64
PKG
PKG
C
L
C
L
1.00
0.80
0.65
SEATING
PLANE
2.15
1.85
1.075
0.925
0.225
0.075
PKG
C
L
PKG
C
L
13
0.20
0.60
0.50
1.00
0.84
0.30 MIN
2.35 MIN
0.50 MIN
1.35
DRAIN 1
TERMINAL
DRAIN 2
TERMINAL
4
6
PKG
C
L
PKG
C
L
Rev. I20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY L ICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECI FICATIONS DO NOT EXPAND THE TERMS OF FAIRCHIL D’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life sup port devices or systems a re devices or system s which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) wh ose failure to pe rform when pr operly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Serie s™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SW I TCHER®
SMART ST ART ™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
Across the board. Around the world.™
The Power Franchise ®
Programmable Active Droop™
Datasheet Identificatio n Product Status Defi nition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
