:SAMSUNG SEMICONDUCTOR INC LYE D Jeccusue coszze0 s ff Fee nee eee wee a ee ee BCX70G _ . NPN. EPITAXIAL SILICON TRANSISTOR TAA GENERAL PURPOSE TRANSISTOR ra SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25C) - Characteristic Symbol Rating Unit Collector-Base Voltage Veso 45 Vv Collector-Emitter Voltage Vero 45 Vv . Emitter-Base Voltage Veso 5 Vv . Collector Current Ie 200 mA - Collector Dissipation Po 350 mw Storage Temperature Tstg 150 C * Refer to MMBT5088 for graphs 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T.=25C) |- Characteristic Symbol | 5 Test Condition Min. Max Unit Collector-Emitter Breakdown Voltage | BVceo igp=2mA, lh=0 45 : Vv Emitter-Base Breakdown Voltage - BVego le=1pA, =O Vv Collector Cutoff Current lees Vce=32V, Vor=0 20 nA Emitter Cutoff Current leso Vea=4V, Ic=O0 20 nA DC Current Gain Dee Voe=5V, lb=2mA 120 220 Vee=1V, lc=50mA 60 Collector-Emitter Saturation Voltage Vee (sat) | lb=10mA, lk=0.25mA 0.35 Vv lce=50mA, Ip=1.25mA . 0.55 Vv Base-Emitter Saturation Voltage Vee (sat) | le=50mA, Ip=0.25mA 0.6 0.85 Vv lc=50mA, le=1.25mA 0.7 1.05 Vv Base-Emitter On Voltage Vee(on) | Ie=2mA, Vee=5V . 0.55 0.75 Vv Current Gain-Bandwidth Product fr Voe=5V, [b= 10MmA 125 MHz f=100MHz Output Capacitance Cob Ver=10V, le=O 4.5 pF f=1MHz Noise Figure NF Ie=0.2mA, Voe=5V 6 dB f=1KHz, Rs=2K2 Turn On Time ton Ie=10mA, lu1=1mMA 160 ns Turn Off Time toff lpa=1mMA, Vep=3.6V 800 ns R.=9902, R,=R,=5KN , Marking AG ce SAMSUNG SEMICONDUCTOR 490