PM50CL1B120 - Mitsubishi Electric

May 2009

MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

PM50CL1B120

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

7.75 98.25

2.5

232323

19.5

25.7525

L A B E L

9.5

1.5

2-φ2.5

1. VUPC

2. UFO

3. UP

4. VUP1

5. VVPC

6. VFO

7. VP

8. VVP1

9. VWPC

10. WFO

11. WP

12. VWP1

13. VNC

14. VN1

15. NC

16. UN

17. VN

18. WN

19. Fo

Te r minal code

19-

■

0.5

9.5

11.5

27.5

106

±0.25

66.519.75

3.25

44444444

16 15.25

6-23-23-23-2

1616

120

BUVW

1395119

4-φ2.5

MOUNTING HOLES

2-φ5.5

FEATURE

Inverter + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip sur-

face temperature of CSTBTTM is adopted.

c) Error output signal is possible from all each protection up-

per and lower arm of IPM.

d) Compatible L-series package.

•3φ 50A, 1200V Current-sense and temperature sense

IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short-

circuit, over-temperature & under-voltage (P-FO available

from upper arm devices)

• UL Recognized

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

WP1

WPC

VP1

VPC

UP1

UPC

NC N W V U P

1.5k

1.5k 1.5k 1.5k

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

Gnd In Fo Vcc

Gnd Si Out OT

1200

100

462

–20 ~ +150

Ratings

VCES

±IC

±ICP

Collector-Emitter Voltage

Collector Current

Collector Current (Peak)

Collector Dissipation

Junction Temperature

VD = 15V, VCIN = 15V

TC = 25°C(Note-1)

TC = 25°C

TC = 25°C(Note-1)

°C

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Symbol Parameter Condition Unit

INTERNAL FUNCTIONS BLOCK DIAGRAM

*: TC measurement point is just under the chip.

VFO

IFO

CONTROL PART

Supply Voltage

Input Voltage

Fault Output Supply Voltage

Fault Output Current

Symbol Parameter Condition Ratings Unit

Applied between : VUP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN-VNC

Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC

FO-VNC

Sink current at UFO, VFO, WFO, FO terminals

VCIN

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

Parameter

Symbol

Supply Voltage Protected by

Supply Voltage (Surge)

Storage Temperature

Isolation Voltage

Condition

VCC(surge)

Tstg

Viso

Ratings

VCC(PROT) 800

1000

–40 ~ +125

2500

Unit

°C

Vrms

VD = 13.5 ~ 16.5V

Inverter Part, Tj = +125°C Start

Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

TOTAL SYSTEM

0.27

0.47

0.038

°C/W

Rth(j-c)Q

Rth(j-c)F

Rth(c-f)

Inverter IGBT part (per 1 element) (Note-1)

Inverter FWDi part (per 1 element) (Note-1)

Case to fin, (per 1 module)

Thermal grease applied (Note-1)

Symbol Condition Unit

Min.

—

Junction to case Thermal

Resistances

THERMAL RESISTANCES

Contact Thermal Resistance

(Note-1) TC (under the chip) measurement point is below.

Parameter Limits

Typ. Max.

IGBT

28.6

–8.4

VP WP UN VN WN

FWDi

28.6

0.2

IGBT

65.4

–8.4

FWDi

65.4

0.2

IGBT

87.4

–8.4

FWDi

87.4

0.2

IGBT

38.6

6.8

FWDi

38.6

–1.8

IGBT

54.6

6.8

FWDi

54.6

–1.8

IGBT

76.6

6.8

FWDi

76.6

–1.8

arm

axis

(unit : mm)

2.15

2.35

3.3

2.0

0.8

1.0

2.8

1.2

Min. Typ. Max.

Collector-Emitter Saturation

Voltage

Collector-Emitter Cutoff

Current

–IC = 50A, VD = 15V, VCIN = 15V (Fig. 2)

Tj = 25°C

Tj = 125°C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART

Parameter

Symbol Condition

VCE(sat)

ICES

VEC

ton

trr

tc(on)

toff

tc(off)

Limits

—

0.3

—

1.65

1.85

2.3

0.8

0.3

0.4

1.2

0.4

—

Tj = 25°C

Tj = 125°C

FWDi Forward Voltage

Switching Time

VD = 15V, VCIN = 0V↔15V

VCC = 600V, IC = 50A

Tj = 125°C

Inductive Load (Fig. 3,4)

= V

CES

, V

= 15V

(Fig. 5)

VD = 15V, IC = 50A

VCIN = 0V, Pulsed (Fig. 1) V

µs

Unit

Bottom view

* If you use this value, Rth(f-a) should be measured just under the chips.

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

–20 ≤ Tj ≤ 125°C

VD = 15V, VCIN = 15V (Note-2)

VD = 15V (Note-2)

Vth(ON)

Vth(OFF)

toff(SC)

OT(hys)

UVr

IFO(H)

IFO(L)

tFO

Trip level

Hysteresis

Trip level

Reset level

–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6)

VD = 15V (Fig. 3,6)

VD = 15V, VCIN = 15V

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN-VNC

°C

1.8

2.3

—

12.5

—

0.01

—

Circuit Current

Input ON Threshold Voltage

Input OFF Threshold Voltage

Short Circuit Trip Level

Short Circuit Current Delay

Time

Over Temperature Protection

Supply Circuit Under-Voltage

Protection

Fault Output Current

Minimum Fault Output Pulse

Width

CONTROL PART

—

1.2

1.7

100

—

135

—

11.5

—

1.0

Parameter

Symbol Condition Max.

Min. Typ. Unit

Limits

1.5

2.0

—

0.2

—

12.0

12.5

—

1.8

(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to

protect it.

µs

VN1-VNC

V*P1-V*PC

3.5

—

Mounting part screw : M5

—

Symbol Parameter

Mounting torque

Weight

Condition Unit

N • m

Limits

Min. Typ. Max.

2.5

—

3.0

340

MECHANICAL RATINGS AND CHARACTERISTICS

RECOMMENDED CONDITIONS FOR USE

Recommended value Unit

Condition

Symbol Parameter

Applied across P-N terminals

Applied between : VUP1-VUPC, VVP1-VVPC

VWP1-VWPC, VN1-VNC (Note-3)

Applied between : UP-VUPC, VP-VVPC, WP-VWPC

UN • VN • WN-VNC

Using Application Circuit of Fig. 8

Supply Voltage

Control Supply Voltage

Input ON Voltage

Input OFF Voltage

PWM Input Frequency

≤ 800

15.0 ±1.5

≤ 0.8

≥ 9.0

≤ 20

VCC

VCIN(ON)

VCIN(OFF)

fPWM

VDV

kHz

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

tdead Arm Shoot-through Blocking

Time For IPM’s each input signals (Fig. 7) ≥ 2.5 µs

≤

5V/µs

≤

GND

15V

Detect Temperature of IGBT chip

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

PRECAUTIONS FOR TESTING

1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corre-

sponding supply voltage and each input signal should be kept off state.

After this, the specified ON and OFF level setting for each input signal should be done.

2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-

lowed to rise above VCES rating of the device.

(These test should not be done by using a curve tracer or its equivalent.)

P, (U,V,W)

U,V,W, (N) U,V,W, (N)

VD (all)

VCIN

(0V)

V V

P, (U,V,W)

VCIN

(15V)

–Ic

Fig. 7 Dead time measurement point example

Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test

0V 1.5V 1.5V

1.5V

tdeadtdeadtdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

IPM’ input signal VCIN

(Upper Arm)

IPM’ input signal VCIN

(Lower Arm)

10%

90%

trr

Irr

trtd(on)

tc(on) tc(off)

td(off)

VCIN

VCE

10%

10% 10%

90%

(ton = td(on) + tr) (toff = td(off) + tf)

U,V,W

Vcc

VD (all)

U,V,W

VCIN

(15V)

VCIN

(15V)

Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform

a) Lower Arm Switching

Signal input

(Upper Arm)

Signal input

(Lower Arm)

Signal input

(Upper Arm)

Signal input

(Lower Arm)

b) Upper Arm Switching

VCIN

Fig. 5 ICES Test

Fig. 6 SC Test Waveform

SC Trip

Short Circuit Current

toff(SC)

VD (all) U,V,W, (N)

P, (U,V,W) A

Pulse VCE

VCIN

(15V) Ic

Constant Current

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

NOTES FOR STABLE AND SAFE OPERATION ;

•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the

stray capacity between the input and output wirings of opto-coupler.

•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.

•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.

•Slow switching opto-coupler: CTR > 100%

•Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the

power supply.

•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N

terminal.

•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line

and improve noise immunity of the system.

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

OUT

GNDGND

Vcc

→

–

OUT

GNDGND

Vcc

OUT

GNDGND

Vcc

OUT

GNDGND

Vcc

OUT

GNDGND

Vcc

OUT

GND

Vcc

VWP1

WFo

VWPC

VN1

VNC

1.5k

VVP1

VVPC

≥0.1µ

20k

≥10µ

20k ≥10µ

≥0.1µ

VUP1

VUPC

→

1.5k

VFo

1.5k

UFo

1.5k

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

PERFORMANCE CURVES

0.5 1.0 1.5 2.0

00.5 1.0 1.5 2.0 2.5 3.0

0.5

1.0

1.5

2.0

2.5

10 20 30 40 50 60 70

23457

–1

23457

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

12 13 14 15 16 17 18

Tj = 25°C

13V

VD = 17V VD = 15V

Tj = 25°C

Tj = 125°C

VD = 15V

Tj = 25°C

Tj = 125°C

IC = 50A

Tj = 25°C

Tj = 125°C

ton

toff

VCC = 600V

VD = 15V

Tj = 25°C

Tj = 125°C

Inductive load

VCC = 600V

VD = 15V

Tj = 25°C

Tj = 125°C

Inductive load

tc(on)

tc(off)

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT I

(A)

COLLECTOR-EMITTER VOLTAGE V

(V)

COLLECTOR-EMITTER

SATURATION VOLTAGE V

CE(sat)

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT I

(A)

COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. VD) CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE(sat)

(V)

CONTROL POWER SUPPLY VOLTAGE V

(V)

COLLECTOR RECOVERY CURRENT –I

(A)

EMITTER-COLLECTOR VOLTAGE V

(V)

DIODE FORWARD CHARACTERISTICS

(TYPICAL)

SWITCHING TIME ton, toff (µs)

SWITCHING TIME (ton, toff) CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT I

(A)

SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS

(TYPICAL)

SWITCHING TIME tc(on), tc(off) (µs)

COLLECTOR CURRENT I

(A)

15V

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PM50CL1B120

FLAT-BASE TYPE

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May 2009

1.0

2.0

3.0

4.0

5.0

6.0

7.0

010 20 30 40 50 60 70 0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

10.0

20.0

30.0

40.0

50.0

5.0

15.0

25.0

35.0

45.0

010 20 30 40 50 60 70

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

010 20 30 40 50 60 70

off

= 600V

= 15V

= 25°C

= 125°C

Inductive load

= 600V

= 15V

= 25°C

= 125°C

Inductive load

= 600V

= 15V

= 25°C

= 125°C

Inductive load

COLLECTOR CURRENT I

(A)

SWITCHING LOSS CHARACTERISTICS

(TYPICAL)

SWITCHING LOSS E

, E

off

(mJ/pulse)

COLLECTOR REVERSE CURRENT –I

(A)

SWITCHING RECOVERY LOSS CHARACTERISTICS

(TYPICAL)

SWITCHING LOSS E

(mJ/pulse)

DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

COLLECTOR REVERSE CURRENT –I

(A)

REVERSE RECOVERY TIME t

(µs)

REVERSE RECOVERY CURRENT l

(A)

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

45.0

50.0

5 10 15 20 25

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

N-side

P-side

= 15V

= 25°C

= 125°C

= 15V

–50 0 50 100 150 –50 0 50 100 150

UVr

(kHz)

VS. f

CHARACTERISTICS

(TYPICAL)

(mA)

(°C)

UV TRIP LEVEL VS. T

CHARACTERISTICS

(TYPICAL)

SC TRIP LEVEL VS. T

CHARACTERISTICS

(TYPICAL)

/UV

(°C)

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MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CL1B120

FLAT-BASE TYPE

INSULATED PACKAGE

May 2009

23 57

–3

23 5723 57

–4

23 57

–1

23 57

–2

–5

–2

–3

–1

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(TYPICAL)

NORMALIZED TRANSIENT

THERMAL IMPEDANCE Z

th(j-c)

t(sec)

Single Pulse

IGBT part;

Per unit base

= R

th(j-c)

Q = 0.27°C/W

FWDi part;

Per unit base

= R

th(j-c)

F = 0.47°C/W

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