7P016FLA331C15 - Microsemi Corp. - Datasheet.Directory

PCMCIA Flash Memory Card

FLA Series

1White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs

July 2007

Rev. 6

White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

PCMCIA Flash Memory Card

1 MEGABYTE through 40 MEGABYTE (Intel/Sharp based)

FEATURES

 Low cost High Density Linear Flash Card

 Supports 5V only systems or 5V systems with

12V VPP

 Based on Intel/Sharp FlashFile Components

 Fast Read Performance

- 150ns or 200ns Maximum Access Time

 x8 / x16 Data Interface

 High Performance Random Writes

- 8µs Typical Word Write Time

 Automated Write and Erase Algorithms

- Command User Interface

 100,000 Erase Cycles per Block

 64K word symmetrical Block Architecture

 PC Card Standard Type I Form Factor

GENERAL DESCRIPTION

WEDC’s FLA Series Flash memory cards offer high density

linear Flash solid state storage solutions for code and data

storage, high performance disk emulation and execute

in place (XIP) applications in mobile PC and dedicated

(embedded) equipment.

FLA series cards conform to PCMCIA international

standard.

The card’s control logic provides the system interface

and controls the internal Flash memories. Card can be

read/written in byte-wide or word-wide mode which allows

for ﬂ exible integration into various systems. Combined

with ﬁ le management software, such as Flash T ranslation

Layer (FTL), FLA Flash cards provide removable high-

performance disk emulation.

The FLA series offers low power modes controlled by

registers. Standard cards contain separate 2kB EEPROM

memory for Card Information Structure (CIS) which can be

used for easy identiﬁ cation of card characteristics.

The WEDC FLA series is based on Intel/Sharp Flash

memories.

Note: Standard options include attribute memory. Cards without attribute memory are

available. Cards are also available with or without a hardware write protect switch.

ARCHITECTURE OVERVIEW

WEDC’s FLA series is designed to support from 2 to 20,

4Mb, 8Mb or 16Mb components, providing a wide range

of density options. Cards are based on the 28F008SA

(8Mb) for 12V VPP applications or on the 28F004S5

(4Mb), 28F008S5 (8Mb) and 28F016S5 (16Mb) devices

for 5V only applications. Devices codes for the 28F004S5,

28F008SA, 28F008S5 and the 28F016S5 are: A7H,

A2H, A6H and AAh respectively. Systems should be

able to recognize all four codes. Cards utilizing the 8Mb

components provide densities ranging from 2MB to 20MB

in 2MB increments, cards utilizing 16Mb components

provide densities ranging from 4MB to 40MB in 4MB

increments. 4 Mbit memory devices are used only for

smallest capacity cards (1MB).

In support of the PC Card 95 standard for word wide

access devices are paired. Therefore, the Flash array is

structured in 64K word (128kBytes) blocks. Write, read

and block erase operations can be performed as either

a word or byte wide operation . By multiplexing A0, CE1#

and CE2,# 8-bit hosts can access all data on data lines

DQ0-DQ7.

The FLA21-FLA36 series also supports the following

PCMCIA compatible register functions: Soft Reset via the

Conﬁ guration Option Register , Power Down (sleep mode)

via the Conﬁ guration and Status Register and monitoring

of Ready/Busy, Soft Reset and Power Down via the Card

Status Register (cards without attribute memory and

versions FLA51 - FLA66 do not have registers).

The FLA series cards conform with the PC Card Standard

(PCMCIA) and JEIDA, providing electrical and physical

compatibility. The PC Card form factor offers an industry

standard pinout and mechanical outline, allowing density

upgrades without system design changes.

WEDC’s standard cards are shipped with WEDC’ s Logo.

Cards are also available with blank housings (no Logo).

The blank housings are available in both a recessed

(for label) and flat housing. Please contact WEDC

sales representative for further information on Custom

artwork.

PCMCIA Flash Memory Card

FLA Series

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July 2007

Rev. 6

White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

BLOCK DIAGRAM

Device type Manuf ID Device ID

28F004S5 89H A7H

28F008SA 89H A2H

28F008S5 89H A6H

28F016S5 89H AAH

Device Pair (N/2 - 1)

M Res

Device Pair 1

Device Pair 0

VCC

Device (N-1)

Device 3

Device 1

Device 2

Device 0

Device (N-2)

WH#

RH#

WL#

RL#

DATA

BUS

Q8-Q15

DATA

BUS

D8-D15

DATA

BUS

Q0-Q7

DATA

BUS

D0-D7

CS0

CS1

CSn

CSn Cn

Ctrl At/Reg enable

Control Logic

PCMCIA Interface

Array

Address

Bus

ADDRESS

BUFFER ADDRESS BUS

Control

Address

Bus

A1-A25

WE#

OE#

CE2#

CE1#

REG#

WP SR Clr

Reg C;r

/SR

/PD

4000h

0000h

Card

Management

Registers

attrib. mem

EEPROM 2kB

CIS

Q0-Q7

control

I/O buffer

PCMCIA Flash Memory Card

FLA Series

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White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

ADDRESS REGISTER NAME

4100h Status Register

4002h Conﬁ g. and Status Register

4000h Conﬁ guration Option Register

REGISTERS IN ATTRIBUTE MEMORY SPACE*

COR

CONFIGURATION OPTION REGISTER: ADRS =

4000H WRITE ONLY

*Cards without Att. Mem and FLA51- FLA66 do not have

registers

SRES LREQ Conﬁ guration Index

D7 D6 D5 D4 D3 D2 D1 D0

D7 Soft Reset, active High

1 = Reset State

0 = End Reset State

D6 Level Req (not supported)

D5-D0 Conﬁ guration index (not supported)

CSR

CONFIGURATION STATUS REGISTER: ADRS =

4002H WRITE ONLY

Not Supported PDwn Not Supported

D7 D6 D5 D4 D3 D2 D1 D0

D2 Power Down, active High

1 = Place all memory devices in power down mode

0 = Normal Operation Power On

default = 0

STATUS REGISTER: ADRS = 4100H

READ ONLY

Not Supported SReset PDwn Not Supported R/BSY

D7 D6 D5 D4 D3 D2 D1 D0

D5 Represents the state of SRESET bit in COR (4000h)

1 = Reset

0 = Normal Operation

Power On default D5 = 0

D3 Represents the state of Power Down bit (D2) in CSR

(4002h)

1 = Power Down

D0 Reﬂ ects the card's Ready/Busy signal (pin 16) driven

by memory components Ready/

Busy outputs. This bit allows software polling of the

card's Ready/Busy status.

1 = Ready

MECHANICAL

1.0mm + 0.05

(0.039”)

1.0mm + 0.05

(0.039”)

1.6mm + 0.05

(0.063”)

Interconnect area

10.0mm MIN

(0.400”)

10.0mm MIN

(0.400”)

3.0mm MIN

54.0mm + 0.10

(2.126”)

85.6mm + 0.20

(3.370”)

3.3mm + T1 (0.130”)

T1=0.10mm unterconnect area

T1=0.20mm substrate area

Substrate area

PCMCIA Flash Memory Card

FLA Series

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White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

Pin Signal name I/O Function Active

1 GND Ground

2DQ3I/O Data bit 3

3DQ

4I/O Data bit 4

4DQ

5I/O Data bit 5

5DQ6I/O Data bit 6

6DQ7I/O Data bit 7

7CE

1# I Card enable 1 LOW

10 I Address bit 10

9 OE# I Output enable LOW

10 A11 I Address bit 11

11 A9I Address bit 9

12 A8I Address bit 8

13 A13 I Address bit 13

14 A14 I Address bit 14

15 WE# IWrite Enable LOW

16 RDY/BSY# O Ready/Busy LOW (4)

17 VCC Supply Voltage

18 VPP1Prog. Voltage NC

19 A16 I Address bit 16

20 A15 I Address bit 15

21 A12 I Address bit 12

22 A7I Address bit 7

23 A6I Address bit 6

24 A5I Address bit 5

25 A4IAddress bit 4

26 A3I Address bit 3

27 A2I Address bit 2

28 A1I Address bit 1

29 A0I Address bit 0

30 DQ0I/O Data bit 0

31 DQ1I/O Data bit 1

32 DQ2I/O Data bit 2

33 WP O Write Potect HIGH

34 GND Ground

Pin Signal name I/O Function Active

35 GND Ground

36 CD1# O Card Detect 1 LOW

37 DQ11# I/O Data bit 11

38 DQ12 I/O Data bit 12

39 DQ13 I/O Data bit 13

40 DQ14 I/O Data bit 14

41 DQ15 IData bit 15

42 CE2I Card Enable 2 LOW

43 VS1# O Voltage Sense 1 NC

44 RFU Reserved

45 RFU Reserved

46 A17 I Address bit 17

47 A18 IAddress bit 18

48 A19 I Address bit 19

49 A20 I Address bit 20 2MB(3)

50 A21 I Address bit 21 4MB(3)

51 VCC Supply Voltage

52 VPP2Prog. Voltage NC

53 A22 I Address bit 22 8MB(3)

54 A23 I Address bit 23 16MB(3)

55 A24 I Address bit 24 32MB(3)

56 A25 I Address bit 25 64MB(3)

57 VS2O Voltage Sense 2 NC

58 RST I Card Reset HIGH (4)

59 Wait O Extended Bus cycle Low(2,4)

60 RFU# Reserved

61 REG I Attrib Mem Select

62 BVD2# OBat. Volt. Detect 2 (2)

63 BVD1O Bat. Volt. Detect 1 (2)

64 DQ8I/O Data bit 8

65 DQ9I/O Data bit 9

66 DQ10 O Data bit 10

67 CD2O Card Detect 2 LOW

68 GND# Ground

PINOUT

Notes:

1. RDY/BSY signal is an “Open drain” type output, pull-up resistor on host side is required.

2. Wait#, BVD1 and BVD2 are driven high for compatibility.

3. Shows density for which speciﬁ ed address bit is MSB. Higher order address bits are no connects

(ie 4MB A21 is MSB A22 - A25 are NC).

4. NC - No Connection for FLA51 - FLA66.

PCMCIA Flash Memory Card

FLA Series

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July 2007

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White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

Symbol Type Name and Function

A0 - A25 INPUT ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not

used in word access mode. A25 is the most signiﬁ cant bit

DQ0 - DQ15 INPUT/OUTPUT DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.

CE1#, CE2# INPUT CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0, CE1#

and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.

OE# INPUT OUTPUT ENABLE: Active low signal gating read data from the memory card.

WE# INPUT WRITE ENABLE: Active low signal gating write data to the memory card.

RDY/

BSY#(*) OUTPUT READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that

the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy with

internally timed erase or write activities.

CD1#, CD2# OUTPUT CARD DETECT 1 and 2: Provide card insertion detection. These signals are internally connected to ground on the card.

The host shall monitor these signals to detect card insertion (pulled-up on host side).

WP OUTPUT WRITE PROTECT: Write protect reﬂ ects the status of the Write Protect switch on the memory card. WP set to high =

write protected, providing internal hardware write lockout to the Flash array.If card does not include optional write protect

switch, this signal will be pulled low internally indicating write protect = “off”.

VPP1, VPP2 N.C. PROGRAM/ERASE POWER SUPPLY: Provides programming voltages for card (12V). Not connected for 5V only card.

VCC CARD POWER SUPPLY: (5.0V).

GND CARD GROUND

REG# INPUT ATTRIBUTE MEMORY SELECT : Active low signal, enables access to Attribute Memory Plane, occupied by Card

Information Structure and Card Registers.

RST(*) INPUT RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for the

memory array.

WAIT#(*) OUTPUT WAIT: This signal is pulled high internally for compatibility. No wait states are generated.

BVD1, BVD2 OUTPUT BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.

VS1, VS2 OUTPUT VOLTAGE SENSE: Notiﬁ es the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V card .

RFU RESERVED FOR FUTURE USE

NC NO INTERNAL CONNECTION TO CARD: pin may be driven or left ﬂ oating

CARD SIGNAL DESCRIPTION

(*) Signals not supported by FLA51-66 (N.C)

READ function Common Memory Attribute Memory

Function Mode CE2# CE1# A0OE# WE# REG# D15-D8D7-D0REG# D15-D8D7-D0

Standby Mode H H X X X X High-Z High-Z X High-Z High-Z

Byte Access (8 bits) H L L L H H High-Z Even-Byte L High-Z Even-Byte

H L H L H H High-Z Odd-Byte L High-Z Not Valid

Word Access (16 bits) L L X L H H Odd-Byte Even-Byte L Not Valid Even-Byte

Odd-Byte Only Access L H X L H H Odd-Byte High-Z L Not Valid High-Z

WRITE function

Standby Mode H H X X X X X X X X X

Byte Access (8 bits) H L L H L H X Even-Byte L X Even-Byte

H L H H L H X Odd-Byte L X X

Word Access (16 bits) L L X H L H Odd-Byte Even-Byte L X Even-Byte

Odd-Byte Only Access L H X H L H Odd-Byte X L X X

FUNCTIONAL TRUTH TABLE

PCMCIA Flash Memory Card

FLA Series

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White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

Operating Temperature T A (ambient)

Commercial 0°C to +60 °C

Industrial -40°C to +85 °C

Storage Temperature

Commercial 0°C to +60 °C

Industrial -40°C to +85 °C

Voltage on any pin relative to VSS -0.5V to VCC+0.5V

VCC supply Voltage relative to VSS -0.5V to +7.0V

Note:

(1) Stress greater than those listed under “Absolute Maximum ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation at these or any other conditions greater than those

indicated in the operational sections of this speciﬁ cation is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

ABSOLUTE MAXIMUM RATINGS (1)

Symbol Parameter Density(Mbytes) Notes Typ(3) Max Units Test Conditions

ICCR VCC Read Current All 35 mA VCC = VCCmax

tcycle = 150ns,CMOS levels

ICCW VCC Program Current All 28F008S5

28F016S5 75 mA

ICCW VCC Program Current All 28F008SA

Vpp=12V 30 mA

IPPW VPP Program Current All 30 mA

ICCE VCC Erase Current All 100 mA

ICCS

(CMOS) VCC Standby Current 2MB 2

28F008SA 110 230 µA VCC = VCCmax

Control Signals = VCC

Reset = VSS, CMOS levels

20MB 900

2MB 2 600

20MB 28F008S5 420

4MB 2 60

40MB 28F016S5 380

DC CHARACTERISTICS (1)

CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V

Notes:

1. All currents are RMS values unless otherwise speciﬁ ed. ICCR, ICCW and ICCE are based on Byte wide operations. For 16 bit operation values are double.

2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.

3. T ypical: VCC = 5V, T = +25C.

Symbol Parameter Notes Min Max Units Test Conditions

ILI Input Leakage Current 1 ±20 µA VCC = VCCMAX

VIN =VCC or VSS

ILO Output Leakage Current 1 ±20 µA VCC = VCCMAX

VOUT =VCC or VSS

VIL Input Low Voltage 1 0 0.8 V

VIH Input High Voltage 1 0.7VCC VCC+0.5 V

VOL Output Low Voltage 1 0.4 V IOL = 3.2mA

VOH Output High Voltage 1 VCC-0.4 VCC VIOH = -2.0mA

VLKO VCC Erase/Program Lock Voltage 1 2.0 V

Notes:

1. Values are the same for byte and word wide modes for all card densities.

2. Exceptions: Leakage currents on CE1, CE2, OE, REG and WE will be < 500 µA when VIN = GND due to internal pull-up resistors. Leakage currents on RST will be <150µA when

VIN=VCC due to internal pull-down resistor.

PCMCIA Flash Memory Card

FLA Series

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July 2007

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White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

SYMBOL (PCMCIA) Parameter 150ns

Min Max Unit

tC(R) Read Cycle Time 150 ns

tA(A) Address Access Time 150 ns

tA(CE) Card Enable Access Time 150 ns

tA(OE) Output Enable Access Time 75 ns

tSU(A) Address Setup Time 20 ns

tSU(CE) Card Enable Setup Time 0 ns

tH(A) Address Hold Time 20 ns

tH(CE) Card Enable Hold Time 20 ns

tV(A) Output Hold from Address Change 0 ns

tDIS(CE) Output Disable Time from CE# 75 ns

tDIS(OE) Output Disable Time from OE# 75 ns

tEN(CE) Output Enable Time from CE# 5 ns

tEN(OE) Output Enable Time from OE# 5 ns

tREC(RSR) Power Down recovery to Output Delay. VCC = 5V 500 ns

AC CHARACTERISTICS - READ TIMING PARAMETERS

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 speciﬁ cations.

READ TIMING DIAGRAM

[25::0], REG#

tC(R)

CE1#, CE2#

OE#

D[15::0]

tA(CE)

tH(A)

tSU(A)

NOTE 1

DATA VALID

tA(A)

tV(A)

tSU(CE)

NOTE 1

tA(OE) tH(CE)

tEN(OE)

tDIS(CE)

tDIS(OE)

Note: Signal may be high or low in this area.

PCMCIA Flash Memory Card

FLA Series

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White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

SYMBOL (PCMCIA) Parameter 150ns Unit

Min Max

tCW Write Cycle Time 150 ns

tW(WE) Write Pulse Width 80 ns

tSU(A) Address Setup Time 20 ns

tSU(A-WEH) Address Setup Time for WE# 100 ns

tSU(CE-WEH) Card Enable Setup Time for WE# 100 ns

tSU(D-WEH) Data Setup Time for WE# 50 ns

tH(D) Data Hold Time 20 ns

tREC(WE) Write Recover Time 20 ns

tDIS(WE) Output Disable Time from WE# 75 ns

tDIS(OE) Output Disable Time from OE# 75 ns

tEN(WE) Output Enable Time from WE# 5 ns

tEN(OE) Output Enable Time from OE# 5 ns

tSU(OE-WE) Output Enable Setup from WE# 10 ns

tH(OE-WE) Output Enable Hold from WE# 10 ns

tSU(CE) Card Enable Setup Time from OE# 0 ns

AC CHARACTERISTICS - WRITE TIMING PARAMETERS

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 speciﬁ cations.

WRITE TIMING DIAGRAM

Note:

1. Signal may be high or low in this area.

2. When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15-D0) by the host system.

[25::0], REG#

tC(W)

CE1#, CE2#

OE#

D[15::0](DIN)

tW(WE)

tSU(A)

NOTE 1

DATA INPUT

tSU(A-WEH)

tSU(CE) NOTE 1

tREC(WE)

tH(CE)

(OE-WE)

tH(D)

tEN(WE)

D[15::0](DOUT)

WE#

tSU(CE-WEH)

(OE-WE)

DIS

(OE)

DIS

(WE)

NOTE 2

tSU(D-WEH)

(OE)

PCMCIA Flash Memory Card

FLA Series

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DATA WRITE AND ERASE PERFORMANCE (1,3)

VCC = 5V ± 5%, TA = 0C TO + 70C

Symbol Parameter Notes Min Typ(1) Max Units

tWHQV1Word/Byte Program time 4 8 µs

tEHQV1

tWHQV2Block Program Time device SA 0.6 2.1 sec

tEHQV2device S5 0.4 0.5

Block Erase Time device SA 1.6 10 sec

Notes:

1. Typical: Nominal voltages and TA = 25C.

2. Excludes system overhead.

3. Valid for all speed options.

4. To maximize system performance RDY/BSY# signal should be polled.

PRODUCT MARKING

COMPANY NAME

PART NUMBER

LOT CODE/TRACE NUMBER

DATE CODE

Note:

Some products are currently marked with our pre-merger company name/acronym (EDI). During our

transition period, some products will also be marked with our new company name/acronym (WED).

Starting October 2000 all PCMCIA products will be marked only with the WED preﬁ x.

EDI

WED 7P016FLA6200C15 C995 9915

PCMCIA Flash Memory Card

FLA Series

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7 P 016 FLA62 00 C 15

CARD TECHNOLOGY

7 FLASH

8 SRAM

PC CARD

P Standard PCMCIA

R Ruggedized PCMCIA

CARD CAPACITY

016 16MB

CARD FAMILY AND VERSION

- See Card Family and Version Info. for details (next page)

PACKAGING OPTION

00 Standard, type 1

TEMPERATURE RANGE

C = Commercial 0°C to +70°C

I = Industrial -40°C to +85°C

CARD ACCESS TIME

15 150ns

25 250ns

PART NUMBERING

CARD FAMILY AND VERSION

INFORMATION

FLA21-FLA24 Based on 28F008SA (requires 12V VPP

for programming and erase functions)

FLA21 No Attribute Memory, no Write Protect

FLA22 With Attribute Memory, no Write Protect

FLA23 No Attribute Memory, with Write Protect

FLA24 With Attribute Memory, with Write Protect

Example P/N 7P004FLA2200C15

FLA25-FLA28 Based on 28F008S5 for 5V only

applications

FLA25 No Attribute Memory, no Write Protect

FLA26 With Attribute Memory, no Write Protect

FLA27 No Attribute Memory, with Write Protect

FLA28 With Attribute Memory, with Write Protect

Example P/N 7P004FLA2600C15

FLA29-FLA32 Based on 28F016S5 for 5V only

applications

FLA29 No Attribute Memory, no Write Protect

FLA30 With Attribute Memory, no Write Protect

FLA31 No Attribute Memory, with Write Protect

FLA32 With Attribute Memory, with Write Protect

Example P/N 7P004FLA3000C15

FLA33-FLA36 Based on 28F004S5 for 5V only

applications

FLA33 No Attribute Memory, no Write Protect

FLA34 With Attribute Memory, no Write Protect

FLA35 No Attribute Memory, with Write Protect

FLA36 With Attribute Memory, with Write Protect

Example P/N 7P004FLA3600C15

FLA51-FLA54 Based on 28F008SA; the same as

FLA21-FLA24 with exception:

- no registers

- signals RST, RDY/BSY, Wait are not connected

FLA51 No Attribute Memory, no Write

Protect

FLA52 With Attribute Memory, no Write

Protect

FLA53 No Attribute Memory, with Write

PCMCIA Flash Memory Card

FLA Series

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XXX

0021) 2MB 0181) 18MB

004

4MB 020 20MB

0061) 6MB 0242) 24MB

008

8MB 0282) 28MB

0101) 10MB 0322) 32MB

012

12MB 0362) 36MB

0141) 14MB 0402) 40MB

016

16MB

1) Available only for FLA21-FLA24, FLA25-FLA28, FLA51-FLA54, and FLA55-FLA59

2) Available only for FLA29-FLA32 and FLA59-FLA62

FLAYY

Card Family and Version (See Card Family and Version Information)

00 WEDC Logo Silkscreen

01 Blank Housing, Type I

02 Blank Housing, Type I Recessed

C = Commercial 0°C to +70°C

I** = Industrial -40°C to +85°C

15 150ns

Notes: Options without attribute memory and with hardware write protect switch are available.

** Denotes advanced information.

Protect

FLA54 With Attribute Memory, with Write Protect

Example P/N 7P004FLA5200C15

FLA55-FLA58 Based on 28F008S5; the same as FLA25-

FLA28 with exception:

- no registers

- signals RST, RDY/BSY, Wait are not connected

FLA55 No Attribute Memory, no Write Protect

FLA56 With Attribute Memory, no Write Protect

FLA57 No Attribute Memory, with Write Protect

FLA58 With Attribute Memory, with Write Protect

Example P/N 7P004FLA5600C15

FLA59-FLA62 Based on 28F016S5; the same as FLA29-

FLA32 with exception:

- no registers

- signals RST, RDY/BSY, Wait are not connected

FLA59 No Attribute Memory, no Write

Protect

FLA60 With Attribute Memory, no Write

Protect

FLA61 No Attribute Memory, with Write

Protect

FLA62 With Attribute Memory, with

Write Protect

Example P/N 7P004FLA6000C15

FLA63-FLA66 Based on 28F004S5; the same as FLA33-

FLA36 with exception:

- no registers

- signals RST, RDY/BSY, Wait are not connected

FLA63 No Attribute Memory, no Write

Protect

FLA64 With Attribute Memory, no Write

Protect

FLA65 No Attribute Memory, with Write Protect

FLA66 With Attribute Memory, with Write Protect

Example P/N 7P004FLA6600C15

ORDERING INFORMATION 7P XXX FLAYY SS T ZZ

PCMCIA Flash Memory Card

FLA Series

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July 2007

Rev. 6

White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

ADDRESS VALUE DESCRIPTION

44H 49H I

46H 37H 7

48H 50H P

4AH 30H 0

4CH x

4EH x

50H 46H F

52H 4CH L

54H 41H A

56H

58H 32H

32H 2 based on 28F008SA

2 with Att. Mem. no WP

32H

36H 2 based on 28F008S5

6 with Att. Mem. no WP

33H

30H 3 based on 28F016S5

0 with Att. Mem. no WP

5AH 2DH -

5CH 2DH -

5EH 2DH -

60H 31H 1

62H 35H 5

64H 20H SPACE

66H 00H END TEXT

68H 43H C

6AH 4FH O

6CH 50H P

6EH 59H Y

70H 52H R

72H 49H I

74H 47H G

76H 48H H

78H 54H T

7AH 20H SPACE

66H 00H END TEXT

68H 43H C

6AH 4FH O

6CH 50H P

6EH 59H Y

70H 52H R

72H 49H I

74H 47H G

76H 48H H

78H 54H T

7AH 20H SPACE

7CH 45H E

7EH 4CH L

80H 45H E

82H 43H C

84H 54H T

ADDRESS VALUE DESCRIPTION

00H 01H CISTPL_DEVICE

02H 03H TPL_LINK

04H 53H FLASH = 150ns (device writable)

06H 06H

0EH

16H

1EH

26H

2EH

36H

3EH

46H

4EH

5EH

6EH

7EH

8EH

9EH

CARD SIZE: 2MB

4MB

6MB

8MB

10MB

12MB

14MB

16MB

18MB

20MB

24MB

28MB

32MB

36MB

40MB

08H FFH END OF DEVICE

0AH 18H CISTPL_JEDEC_C

0CH 02H TPL_LINK

0EH 89H INTEL - ID

10H A2H

A6H

AAH

INTEL 28F008SA - ID

INTEL 28F008S5 - ID

INTEL 28F016S5 - ID

12H 17H CISTPL_DEVICE_A

14H 03H TPL_LINK

16H 42H EEPROM - 200ns

18H 01H Device Size = 2KBytes

1AH FFH END OF TUPLE

1CH 1EH CISTPL_DEVICEGEO

1EH 06H TPL_LINK

20H 02H DGTPL_BUS

22H 11H DGTPL_EBS

24H 01H DGTPL_RBS

26H 01H DGTPL_WBS

28H 01H DGTPL_PART

2AH 01H FLASH DEVICE

NON-INTERLEAVED

2CH 20H CISTPL_MANFID

2EH 04H TPL_LINK(04H)

30H F6H EDI TPLMID_MANF: LSB

32H 01H EDI TPLMID_MANF: MSB

34H 00H LSB: Number Not Assigned

36H 00H MSB: Number Not Assigned

38H 15H CISTPL_VERS1

3AH 47H TPL_LINK

3CH 05H TPLLV1_MAJOR

3EH 00H TPLLV1_MINOR

40H 45H E

42H 44H D

CIS INFORMATION FOR FLA SERIES CARDS

PCMCIA Flash Memory Card

FLA Series

13 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs

July 2007

Rev. 6

White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

CIS INFORMATION FOR FLA SERIES CARDS (CONT.)

ADDRESS VALUE DESCRIPTION

86H 52H R

88H 4FH O

8AH 4EH N

8CH 49H I

8EH 43H C

90H 20H SPACE

92H 44H D

94H 45H E

96H 53H S

98H 49H I

9AH 47H G

9CH 4EH N

9EH 53H S

A0H 20H SPACE

A2H 49H I

A4H 4EH N

A6H 43H C

A8H 4FH O

AAH 52H R

ACH 50H P

AEH 4FH O

B0H 52H R

B2H 41H A

B4H 54H T

B6H 45H E

B8H 44H D

BAH 20H SPACE

BCH 00H END TEXT

BEH 31H 1

C0H 39H 9

C2H 39H 9

C4H 37H 7

C6H 00H END TEXT

C8H FFH END OF LIST

CAH 1AH CISTPL_CONF

CCH 05H TPL_LINK

CEH 01H TPCC_SZ

D0H 00H TPCC_LAST

D2H 00H TPCC_RADR

D4H 40H TPCC_RADR

D6H 03H TPCC_RMSK

D8H 00H NULL CONTROL TUPLE

DAH FFH CISTPL_END

DCH 00H INVALID ADDRESS The shaded area (addresses BEH C0H C2H C4H) can be different. It represents the

year of introducing the version of the card.

PCMCIA Flash Memory Card

FLA Series

14 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs

July 2007

Rev. 6

White Electronic Designs Corp. reserves the right to change products or speciﬁ cations without notice.

Document Title

PCMCIA Flash Memory Card FLA Series

Revision History

Rev # History Release Date Status

Rev 0 Initial Release April 2007 Final

Rev 6 1.0 Update absolute maximum ratings commercial

temperature to 0°C to +60 °C from 30°C to +80 °C July 2007 Final