RST 5-VCD1A-1-3-226/0,5P12 - BELDEN WIRE AND CABLE

BYV25D-600

Ultrafast power diode

16 August 2017 Product data sheet

1. General description

Ultrafast power diode in a SOT428 (DPAK) surface-mountable plastic package.

2. Features and benefits

•High thermal cycling performance

•Low switching losses

•Low thermal resistance

•Soft recovery minimizes power-consuming oscillations

•Surface-mountable package

3. Applications

•Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

•High frequency switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRreverse voltage DC - - 600 V

IF(AV) average forward

current

δ = 0.5 ; Tmb ≤ 132 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

- - 5 A

IFRM repetitive peak forward

current

δ = 0.5 ; Tmb ≤ 132 °C; square-wave

pulse

- - 10 A

tp = 10 ms; Tj(init) = 25 °C; sine-wave

pulse; Fig. 4

- - 60 AIFSM non-repetitive peak

forward current

tp = 8.3 ms; Tj(init) = 25 °C; sine-wave

pulse

- - 66 A

Static characteristics

IF = 5 A; Tj = 25 °C; Fig. 6 - 1.12 1.3 VVFforward voltage

IF = 5 A; Tj = 150 °C; Fig. 6 - 0.97 1.11 V

Dynamic characteristics

trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;

Tj = 25 °C; Fig. 7

- 30 50 ns

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 2 / 10

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 n.c. not connected

2 K cathode[1]

3 A anode

mb K cathode

DPAK (SOT428)

001aaa020

[1] It is not possible to connect to pin 2 of the SOT428 package

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BYV25D-600 DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped)

SOT428

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 3 / 10

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse

voltage

- 600 V

VRWM crest working reverse

voltage

- 600 V

VRreverse voltage DC - 600 V

IF(AV) average forward current δ = 0.5 ; Tmb ≤ 132 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

- 5 A

IFRM repetitive peak forward

current

δ = 0.5 ; Tmb ≤ 132 °C; square-wave

pulse

- 10 A

tp = 10 ms; Tj(init) = 25 °C; sine-wave

pulse; Fig. 4

- 60 AIFSM non-repetitive peak

forward current

tp = 8.3 ms; Tj(init) = 25 °C; sine-wave

pulse

- 66 A

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

012345678

IF(AV) (A)

Ptot

(W)

= 1

0.5

0.2

0.1

003aac233

IF(AV) = IF(RMS) × √δ

Vo = 0.985 V; Rs = 0.0245 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform; maximum

values

2 3 4 5 6

IF(AV) (A)

Ptot

(W)

003aac234

a = 1.57

1.9

2.2

2.8

4.0

a = form factor = I F(RMS) / IF(AV)

Vo = 0.985 V; Rs = 0.0245 Ω

Fig. 2. Forward power dissipation as a function

of average forward current; sinusoidal waveform;

maximum values

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 4 / 10

-50 0 50 100 150

Tmb (°C)

IF(AV)

(A)

auc3-003

132°C

Fig. 3. Forward current as a function of mounting base

temperature; maximum values

-5

10-4 10-3 10-2

tp (s)

IFSM

(A)

j(init) = 25 °C max

FSM

auc3-004

Fig. 4. Non-repetitive peak forward current as a function

of pulse width; sinusoidal waveform; maximum values

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 5 / 10

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance

from junction to

mounting base

Fig. 5 - - 3 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

[1] - 50 - K/W

[1] device mounted on an FR4 PCB, single-sided copper, tin plated and standard footprint

003aac235

10- 1

Zth(j-mb)

(K/W)

10- 3

10- 2

tp(s)

10- 6 10110- 1

10- 5 10- 3 10- 2

10- 4

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 6 / 10

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IF = 5 A; Tj = 25 °C; Fig. 6 - 1.12 1.3 VVFforward voltage

IF = 5 A; Tj = 150 °C; Fig. 6 - 0.97 1.11 V

VR = 600 V; Tj = 25 °C - 2 50 µAIRreverse current

VR = 600 V; Tj = 100 °C - 0.1 0.35 mA

Dynamic characteristics

trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;

Tj = 25 °C; Fig. 7

- 30 50 ns

IRM peak reverse recovery

current

IF = 10 A; VR = 30 V; dIF/dt = 50 A/µs;

Tj = 25 °C; Fig. 7

- 2.4 4 A

Qrrecovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;

Tj = 25 °C; Fig. 7

- 30 50 nC

VFR forward recovery

voltage

IF = 10 A; dIF/dt = 10 A/µs; Tj = 25 °C - 3.2 - V

0.5 1 1.5 2

VF (V)

(A)

auc3-006

(1) (3)(2)

Vo = 0.985 V; Rs = 0.0245 Ω

(1) Tj = 150 °C; typical values

(2) Tj = 150 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 6. Forward current as a function of forward voltage

003aac562

trr

time

100 %

25 %

IFdlF

IRIRM

Fig. 7. Reverse recovery definitions; ramp recovery

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 7 / 10

10. Package outline

Fig. 8. Package outline DPAK (SOT428)

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 8 / 10

11. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

Definitions

Draft — The document is a draft version only. The content is still under

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. WeEn Semiconductors makes

no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using WeEn Semiconductors products, and WeEn

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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In the event that customer uses the product for design-in and use in

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Semiconductors’ standard warranty and WeEn Semiconductors’ product

specifications.

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 9 / 10

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

WeEn Semiconductors BYV25D-600

Ultrafast power diode

Product data sheet 16 August 2017 10 / 10

12. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 5

9. Characteristics.............................................................. 6

10. Package outline.......................................................... 7

11. Legal information....................................................... 8

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 16 August 2017