1SS302A Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications * Ultra-High-Speed Switching 2. Features (1) Fast reverse recovery time : trr = 1.6 ns (typ.) (2) AEC-Q101 qualified 3. Packaging and Internal Circuit 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 USM 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage Symbol Note Rating Unit V VRM 85 Reverse voltage VR 80 Peak forward current IFM (Note 1) 300 Average rectified current IO (Note 1) 100 PD (Note 2) 100 mW IFSM (Note 1), (Note 3) 2 A Power dissipation Non-repetitive peak forward surge current mA Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating x 70% Note 2: Mounted on a glass epoxy circuit board of 20 mm x 20 mm, Pad dimension of 4 mm x 4 mm. Note 3: Measured with a 10 ms pulse. Start of commercial production (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 1 2014-12 2018-11-16 Rev.4.0 1SS302A 5. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Forward voltage Reverse current Symbol Test Condition Min Typ. Max Unit V VF(1) IF = 1 mA 0.60 VF(2) IF = 10 mA 0.72 VF(3) IF = 100 mA 0.90 1.20 IR(1) VR = 30 V 0.1 IR(2) A VR = 80 V 0.5 Total capacitance Ct VR = 0 V, f = 1 MHz 0.9 3.0 pF Reverse recovery time trr IF = 10 mA See Fig. 5.1. 1.6 4.0 ns Fig. 5.1 Reverse recovery time (trr) Test circuit 6. Marking Fig. 6.1 Marking (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 2 2018-11-16 Rev.4.0 1SS302A 7. Land Pattern Dimensions (for reference only) Fig. 7.1 USM (Unit: mm) (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 3 2018-11-16 Rev.4.0 1SS302A 8. Characteristics Curves (Note) Note: Fig. 8.1 IF - VF Fig. 8.2 IR - VR Fig. 8.3 Ct - VR Fig. 8.4 PD - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 4 2018-11-16 Rev.4.0 1SS302A Package Dimensions Unit: mm Weight: 6.0 mg (typ.) Package Name(s) TOSHIBA: 2-2E1S Nickname: USM (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 5 2018-11-16 Rev.4.0 1SS302A RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". * TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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