Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON RF TRANSISTOR
NE85639 / 2SC4093
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN MINIMOLD
The mark shows major revised points.
Document No. PU10519EJ01V0DS (1st edition)
(Previous No. P10365EJ3V1DS00)
Date Published October 2004 CP(K)
DESCRIPTION
The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and
CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which
enables high-isolation gain.
FEATURES
•Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
•High Power gain
S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
•Maximum available power gain: MAG = 14.2 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
•4-pin minimold Package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE85639-A
2SC4093-A
50 pcs (Non reel)
•8 mm wide embossed taping
•Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
NE85639-T1-A
2SC4093-T1-A
3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Unit
Collector to Base Voltage
VCBO
V
Collector to Emitter Voltage
VCEO
V
Emitter to Base Voltage
VEBO
V
Collector Current
IC
mA
Total Power Dissipation
Ptot Note
mW
Junction Temperature
Tj
C
Storage Temperature
Tstg
C
Note Free air
JEITA
Part No.
PHASE-OUT
Data Sheet PU10519EJ01V0DS
2
NE85639 / 2SC4093
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
1.0
A
DC Current Gain
hFE Note 1
VCE = 10 V, IC = 20 mA
50
120
250
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
7.0
–
GHz
Insertion Power Gain
S21e2
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
11
13
dB
Noise Figure
NF
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
1.1
2.0
dB
Reverse Transfer Capacitance
Cre Note 2
VCB = 10 V, IE = 0 mA, f = 1.0 MHz
0.6
0.95
pF
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R26/RBF Note
R27/RBG Note
R28/RBH Note
Marking
R26
R27
R28
Range
50 to 100
80 to 160
125 to 250
Note Old Specification / New Specification
PHASE-OUT
Data Sheet PU10519EJ01V0DS
3
NE85639 / 2SC4093
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
PHASE-OUT
Data Sheet PU10519EJ01V0DS
4
NE85639 / 2SC4093
Remark The graph indicates nominal characteristics.
S-PARAMETERS
PHASE-OUT
Data Sheet PU10519EJ01V0DS 5
NE85639 / 2SC4093
PACKAGE DIMENSIONS
4-PIN MINIMOLD PACKAGE (UNIT: mm)
PHASE-OUT
NOTICE
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PHASE-OUT
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Authorized Distributor
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NE85639-T1-A 2SC4093-T1-A 2SC4093-A