2SK1880(L), 2SK1880(S)
Silicon N-Channel MOS FET
ADE-208-1331 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
Outline
123
123
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1880(L), 2SK1880(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 600 V
Gate to source voltage VGSS ±30 V
Drain current ID1.5 A
Drain peak current ID(pulse)*13.0 A
Body to drain diode reverse drain current IDR 1.5 A
Channel dissipation Pch*220 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2SK1880(L), 2SK1880(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 100 µAV
DS = 500 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 6.5 8.0 ΩID = 1 A
VGS = 10 V*1
Forward transfer admittance |yfs| 0.85 1.4 — S ID = 1 A
VDS = 20 V*1
Input capacitance Ciss — 250 — pF VDS = 10 V
Output capacitance Coss — 55 — pF VGS = 0
Reverse transfer capacitance Crss — 8 — pF f = 1 MHz
Turn-on delay time td(on) — 10 — ns ID = 1 A
Rise time tr— 25 — ns VGS = 10 V
Turn-off delay time td(off) — 35 — ns RL = 30 Ω
Fall time tf—30—ns
Body to drain diode forward
voltage VDF — 0.95 — V IF = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time trr — 350 — µsI
F
= 1.5 A, VGS = 0,
diF / dt = 100 A / µs
Note 1. Pulse Test
2SK1880(L), 2SK1880(S)
4
30
20
10
50 100 150
Case Temperature Tc (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
0
Drain Current I (A)
Drain to Source Voltage V (V)
DS
D
1 ms
PW = 10 ms (1 shot)
100 s
µ
10 s
µ
Operation in this
area is limited
by R (on)
DS
Maximum Safe Operation Area
0.1 0.3 1 3 10 300 1000
Ta = 25°C
DC Operation (Tc = 25°C)
10
3
1
0.3
0.1
0.03
0.01
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
Drain Current I (A)
D
GS
V = 3.5 V
Drain to Source Voltage V (V)
DS
10 V 5 V
4.5 V
4 V
10 20 30 40 50
Pulse Test
0
Typical Transfer Characteristics
DS
V = 20 V
Pulse Test
Drain Current I ( A )
D
2.0
1.6
1.2
0.8
0.4
2
Gate to Source Voltage V (V)
GS
Tc = 25°C
–25°C
75°C
468100
2SK1880(L), 2SK1880(S)
5
Pulse Test
04
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V (on) (V)
DS
20
16
12
8
4
I = 1.5 A
D
1 A
0.5 A
812 2016
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State
Resistance R (on) ( )
DS
Drain Current I (A)
D
V = 10 V
GS
Ω
0.1 0.2 0.5 1 2 5
100
0.05
50
20
10
5
2
1
Pulse Test
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State
Resistance R (on) ( )
DS Ω
20
16
12
8
4
I = 1 A
D
–40 Case Temperature Tc (°C)
0.5 A
0 40 80 120 160
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
| yfs | (S)
Drain Current I (A)
D
Tc = –25°C
75°C
5
2
1
0.5
0.2
0.1
0.05
25°C
Pulse Test
V = 20 V
DS
0.02 0.05 0.1 0.2 0.5 1 2
2SK1880(L), 2SK1880(S)
6
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time t (ns)
Reverse Drain Current I (A)
DR
di/dt = 100 A/ s
V = 0
Ta = 25°C
Pulse Test
5000
0.1 0.2 0.5 1 2 5 10
GS
µ
rr
2000
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
1000
100
10
1
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
0 1020304050
Drain to Source Voltage V (V)
DS
Dynamic Input Characteristics
1000
800
600
400
200
Drain to Source Voltage V (V)
Gate Charge Qg (nc)
Gate to Source Voltage V (V)
DS
GS
20
16
12
8
4
0
I = 1.5 A
D
V = 100 V
250 V
400 V
DD
0 4 8 121620
V = 100 V
250 V
400 V
DD
VGS
VDS
Switching Characteristics
Switching Time t (ns)
Drain Current I (A)
D
t (on)
t
t
t (off)
500
200
100
50
20
10
50.1 0.2 0.5 1 2 5 10
V = 10 V
PW = 2 s
duty 1%
V 30 V
GS
DD
µ
=
:
<
=
d
rf
d
2SK1880(L), 2SK1880(S)
7
Reverse Drain Current vs.
Source to Drain Voltage
2.0
1.6
1.2
0.8
0.4
Reverse Drain Current I (A)
DR
SD
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V (A)
GS
Pulse Test
V = 10 V
0 V, –5 V
0
10 100 1 m 10 m 100 m 10
0.01
0.03
0.1
0.3
1.0
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance s (t)
γ
µµ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25°C
0.01
1
θch – c(t) = s(t) ch – c
ch – c = 6.25°C / W. Tc = 25°C
PD = PW
T
PW
T
DM
γ.
θθ
Normalized Transient Thermal Impedance vs. Pulse Width
2SK1880(L), 2SK1880(S)
8
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
3.1 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
As of January, 2001
Unit: mm
2SK1880(L), 2SK1880(S)
9
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(4.9)
(5.3)
2SK1880(L), 2SK1880(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
(0.1)(0.1)
2SK1880(L), 2SK1880(S)
11
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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