2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET ADE-208-1331 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 1.5 A 3.0 A 1.5 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 20 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 2 2SK1880(L), 2SK1880(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 30 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 25 V, VDS = 0 Zero gate voltage drain current I DSS -- -- 100 A VDS = 500 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 -- 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 6.5 8.0 ID = 1 A VGS = 10 V*1 Forward transfer admittance |yfs| 0.85 1.4 -- S ID = 1 A VDS = 20 V*1 Input capacitance Ciss -- 250 -- pF VDS = 10 V Output capacitance Coss -- 55 -- pF VGS = 0 Reverse transfer capacitance Crss -- 8 -- pF f = 1 MHz Turn-on delay time t d(on) -- 10 -- ns ID = 1 A Rise time tr -- 25 -- ns VGS = 10 V Turn-off delay time t d(off) -- 35 -- ns RL = 30 Fall time tf -- 30 -- ns Body to drain diode forward voltage VDF -- 0.95 -- V I F = 1.5 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 350 -- s I F = 1.5 A, VGS = 0, diF / dt = 100 A / s Note 1. Pulse Test 3 2SK1880(L), 2SK1880(S) Power vs. Temperature Derating Maximum Safe Operation Area 10 100 150 1.6 Pulse Test 4.5 V 1.2 4V 0.8 0.4 0 VGS = 3.5 V 10 20 30 40 10 300 1000 2.0 Drain Current I D ( A ) Drain Current I D (A) 5V 25 C ) Typical Transfer Characteristics Typical Output Characteristics 10 V = Drain to Source Voltage V DS (V) Case Temperature Tc (C) 2.0 (T c t) 50 s o sh 0.03 0 50 Drain to Source Voltage V DS (V) 4 O pe ra tio n Ta = 25C 0.01 0.1 0.3 1 3 m s s (1 0.1 DC s m 0.3 1 0 10 10 1 O a pe by rea rat R is ion DS lim in (o ite th n) d is 20 10 10 = Drain Current I D (A) 3 PW Channel Dissipation Pch (W) 30 1.6 Pulse Test VDS = 20 V 1.2 0.8 75C Tc = 25C -25C 0.4 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 2SK1880(L), 2SK1880(S) Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 16 I D = 1.5 A 12 8 1A 4 0.5 A 0 4 8 12 16 100 Static Drain to Source on State Resistance R DS (on) ( ) Drain to Source Saturation Voltage V DS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 10 2 1 0.05 0.1 0.2 5 Forward Transfer Admittance | yfs | (S) Static Drain to Source on State Resistance R DS (on) ( ) 20 8 0.5 A 4 -40 0 40 80 120 Case Temperature Tc (C) 160 1 2 5 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature ID = 1 A 0.5 Drain Current I D (A) Gate to Source Voltage VGS (V) 12 VGS = 10 V 5 20 16 Pulse Test 2 Pulse Test V DS = 20 V Tc = -25C 1 0.5 75C 0.2 25C 0.1 0.05 0.02 0.05 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 2SK1880(L), 2SK1880(S) Typical Capacitance vs. Drain to Source Voltage 5000 2000 1000 1000 di/dt = 100 A/s VGS = 0 Ta = 25C Pulse Test VGS = 0 f = 1 MHz Ciss Capacitance C (pF) Reverse Recovery Time t rr (ns) Body to Drain Diode Reverse Recovery Time 500 200 100 Coss 10 100 Crss 50 0.1 0.2 1 0.5 1 2 5 10 0 Reverse Drain Current I DR (A) 10 20 30 40 50 Drain to Source Voltage V DS (V) Switching Characteristics 500 VGS I D = 1.5 A 800 VDD = 100 V 250 V 400 V 600 400 VDS VDD = 100 V 250 V 400 V 4 8 12 4 16 Gate Charge Qg (nc) 6 12 8 200 0 16 0 20 Switching Time t (ns) 20 1000 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VGS = 10 V PW = 2 s duty < = 1% VDD = : 30 V 200 100 t d (off) 50 20 tr tf t d (on) 10 5 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 10 2SK1880(L), 2SK1880(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 2.0 Pulse Test 1.6 1.2 0.8 VGS = 10 V 0.4 0 V, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (A) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 Tc = 25C 1.0 0.5 0.3 0.2 0.1 0.05 0.1 0.02 0.03 0.01 10 ch - c(t) = s(t) . ch - c ch - c = 6.25C / W. Tc = 25C PW D= T P DM lse t Pu ho 1s 0.01 T 100 1m 10 m 100 m PW 1 10 Pulse Width PW (S) 7 2SK1880(L), 2SK1880(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 5.5 0.5 6.5 0.5 5.4 0.5 2.29 0.5 16.2 0.5 1.15 0.1 0.8 0.1 3.1 0.5 1.2 0.3 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 DPAK (L)-(1) -- Conforms 0.42 g 2SK1880(L), 2SK1880(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(1),(2) -- Conforms 0.28 g 9 2SK1880(L), 2SK1880(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(3) -- Conforms 0.28 g 2SK1880(L), 2SK1880(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 11