IXTR20P50P PolarPTM Power MOSFET VDSS ID25 RDS(on) = - 500V = - 13A 490m P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C -13 A IDM TC = 25C, Pulse Width Limited by TJM - 60 A IA TC = 25C - 20 A EAS TC = 25C 2.5 J dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 190 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V~ 20..120/4.5..27 N/lb. z 5 g z TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 HZ, RMS, t = 1min Md Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z Silicon chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Fast Intrinsic Diode The Rugged PolarPTM Process Low QG Low Drain-to-Tab Capacitance Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. z BVDSS VGS = 0V, ID = - 250A - 500 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V - 25 A - 200 A RDS(on) VGS = -10V, ID = -10A, Note 1 TJ = 125C (c) 2012 IXYS CORPORATION, All Rights Reserved V - 4.0 V 490 m Easy to Mount Space Savings High Power Density Applications z z z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99983B(12/12) IXTR20P50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = -10A, Note 1 11 Ciss 18 S 5120 pF 525 pF 75 pF 26 ns 32 ns 80 ns 34 ns 103 nC 28 nC 38 nC VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 * VDSS, ID = -10A td(off) RG = 3 (External) tf Qg(on) VGS = -10V, VDS = 0.5 * VDSS, ID = -10A Qgs ISOPLUS247 (IXTR) Outline Qgd 1 - Gate 2,4 - Drain 3 - Source 0.66 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 20 A ISM Repetitive, Pulse Width Limited by TJM - 80 A VSD IF = -10A, VGS = 0V, Note 1 - 2.8 V trr QRM IRM IF = -10A, -di/dt = -150A/s Note 406 8.93 - 44 VR = -100V, VGS = 0V 1: ns C A Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR20P50P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C -20 -50 VGS = -10V - 7V -18 -16 -40 -35 -14 - 6V ID - Amperes ID - Amperes VGS = -10V - 7V -45 -12 -10 -8 -6 -30 - 6V -25 -20 -15 - 5V -4 -10 -2 -5 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -9 -10 -15 -20 -25 VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = -10A Value vs. Junction Temperature -20 -30 2.4 VGS = -10V - 7V -18 VGS = -10V -16 2.0 R DS(on) - Normalized ID - Amperes -5 VDS - Volts - 6V -14 -12 -10 - 5V -8 -6 -4 I D = - 20A 1.6 I D = -10A 1.2 0.8 -2 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = -10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 -14 VGS = -10V 2.2 -12 TJ = 125C -10 1.8 ID - Amperes R DS(on) - Normalized 2.0 1.6 1.4 -8 -6 -4 1.2 TJ = 25C -2 1.0 0.8 0 0 -5 -10 -15 -20 -25 -30 ID - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved -35 -40 -45 -50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTR20P50P Fig. 8. Transconductance Fig. 7. Input Admittance -35 40 -30 35 TJ = - 40C 30 g f s - Siemens ID - Amperes -25 -20 -15 TJ = 125C 25C - 40C -10 25C 25 20 125C 15 10 -5 5 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 VGS - Volts -25 -30 -35 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -10 -60 VDS = -250V -9 -50 I D = - 10A -8 I G = -1mA -7 VGS - Volts -40 IS - Amperes -20 ID - Amperes -30 TJ = 125C -20 -6 -5 -4 -3 TJ = 25C -2 -10 -1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0 -3.5 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 - 100 RDS(on) Limit 100s 1,000 -10 ID - Amperes Capacitance - PicoFarads Ciss Coss 1ms 10ms -1 100 DC TJ = 150C Crss 100ms TC = 25C Single Pulse f = 1 MHz - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 10 - 100 VDS - Volts - 1000 IXTR20P50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_20P50P(B7)5-13-08