© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C -13 A
IDM TC= 25°C, Pulse Width Limited by TJM - 60 A
IATC= 25°C - 20 A
EAS TC= 25°C 2.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 HZ, RMS, t = 1min 2500 V~
MdMounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 500 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 25 μA
TJ = 125°C - 200 μA
RDS(on) VGS = -10V, ID = -10A, Note 1 490 mΩ
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR20P50P VDSS = - 500V
ID25 = - 13A
RDS(on) ≤≤
≤≤
≤ 490mΩΩ
ΩΩ
Ω
DS99983B(12/12)
Features
zSilicon chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
zAvalanche Rated
zFast Intrinsic Diode
zThe Rugged PolarPTM Process
zLow QG
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switches
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
DIsolated Tab
IXTR20P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = -10A, Note 1 11 18 S
Ciss 5120 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 525 pF
Crss 75 pF
td(on) 26 ns
tr 32 ns
td(off) 80 ns
tf 34 ns
Qg(on) 103 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = -10A 28 nC
Qgd 38 nC
RthJC 0.66 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 20 A
ISM Repetitive, Pulse Width Limited by TJM - 80 A
VSD IF = -10A, VGS = 0V, Note 1 - 2.8 V
trr 406 ns
QRM 8.93 μC
IRM - 44 A
IF = -10A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = -10A
RG = 3Ω (External)
ISOPLUS247 (IXTR) Outline
1 - Gate
2,4 - Drain
3 - Source
© 2012 IXYS CORPORATION, All Rights Reserved
IXTR20P50P
Fi g . 6. Maximum Dr ain C urrent vs.
Case Temp eratu r e
-14
-12
-10
-8
-6
-4
-2
0-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
ID - Am peres
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-9-8-7-6-5-4-3-2-10
V
DS
- Vo lts
I
D
- Ampe res
V
GS
= - 10V
- 7V
- 5
V
- 6
V
Fi g . 2. Exten d ed Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0-30-25-20-15-10-50
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-18-16-14-12-10-8-6-4-20
V
DS
- Vo lts
I
D
- Ampe res
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fig. 4. R
DS(on)
Normalized to I
D
= -10A Value vs.
Jun cti o n Temper atu r e
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= - 10V
I
D
= - 20
A
I
D
= -10
A
Fig. 5. R
DS(on)
Norm alized to I
D
= -10A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50-45-40-35-30-25-20-15-10-50
I
D
- A mpe res
R
DS(on)
- Normalized
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
IXTR20P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-35
-30
-25
-20
-15
-10
-5
0-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
-35-30-25-20-15-10-50
I
D
- Amp e res
g
f s
- Si eme ns
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-60
-50
-40
-30
-20
-10
0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar ge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 250V
I
D
= - 10A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Sing le P ulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
----
100ms
-
-
© 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_20P50P(B7)5-13-08
IXTR20P50P
Fig . 13. Maxi mu m Tran si en t Th er mal I mped an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
