VBO 13 Single Phase Rectifier Bridge IdAV = 18 A VRRM = 800-1600 V Standard and Avalanche Types + VRSM VBRmin VRRM Standard Avalanche V V V Types Types 900 800 VBO 13-08NO2 1300 1230 1200 VBO 13-12NO2 VBO 13-12AO2 1700 1630 1600 VBO 13-16NO2 VBO 13-16AO2 ~ ~ ~ + ~ For Avalanche Types only - Symbol Conditions IdAV IdAVM PRSM TC = 85C, module module TVJ = TVJM IFSM TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM; VR = 0 I2t Maximum Ratings * Avalanche rated parts available * Package with DCB ceramic base plate * Isolation voltage 3600 V~ * Planar passivated chips * Low forward voltage drop * 1/4" fast-on terminals * UL registered E 72873 A A kW (50 Hz) (60 Hz) 220 230 A A t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 180 190 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 240 220 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 160 150 A2s A2s -40...+150 150 -40...+125 C C C 3000 3600 V~ V~ * Easy to mount with one screw * Space and weight savings * Improved temperature & power cycling 1.5-2 13-18 Nm lb.in. Dimensions in mm (1 mm = 0.0394") 15 g VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25C TVJ = TVJM TVJ = 25C t = 1 min t=1s Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages Characteristic Values 0.3 5.0 mA mA VF IF = 55 A 1.8 V VT0 rt For power-loss calculations only 0.85 17 V mW RthJC per diode; 120 el. per module per diode; 120 el. per module 5.60 1.40 6.00 1.50 K/W K/W K/W K/W 13 9.5 50 mm mm m/s2 dS dA a Features 18 30 2.5 TVJ TVJM Tstg RthJH - Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. for resistive load at bridge output with isolated fast-on tabs. IXYS reserves the right to change limits, test conditions and dimensions. 20100706b 1-2 (c) IXYS All rights reserved http://store.iiic.cc/ VBO 13 Fig. 1 Surge overload current per diode IFSM: Crest value, t: duration Fig. 4 Fig. 2 I2t versus time (1-10 ms) per diode Fig. 3 Max. forward current at case temperature Power dissipation versus direct output current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Fig. 5 Rthi (K/W) 0.059 2.714 3.227 ti (s) 0.00217 0.159 2.34 Transient thermal impedance junction to heatsink per diode IXYS reserves the right to change limits, test conditions and dimensions. 20100706b 2-2 (c) IXYS All rights reserved http://store.iiic.cc/