BAV19W
THRU
BAV21W
410mW
Small Signal
Diodes
120 to 250 Volts
Features
• Silicon Epitaxial Planar Diodes
• For General Purpose
• This diode is also available in other case.
Mechanical Data
• Case: SOD-123, Molded Plastic
• Weight: approx. 0.01g
• Marking code: BAV19W=A8
BAV20W=T2
BAV21W=T3
Maximum Ratings
Symbol Rating Rating Unit
VR Continuous Reverse Voltage BAV19W
BAV20W
BAV21W
100
150
200 V
VRRM
Repetitive Peak Reverse Voltage BAV19W
BAV20W
BAV21W
120
200
250 V
IF Forward DC Current at Tamb=25OC(1) 250 mA
IF(AV) Rectified Current (Average) Half Wave
Rectification with Resist. Load at
Tamb=25OC(1) 200 mA
IFRM Repetitive Peak Forward Current at f>50Hz,
Tamb=25OC(1) 625 mA
IFSM Surge Forward Current at t<1s, Tj=25OC 1.0 A
Ptot Power Dissipation at Tamb=25OC(1) 410 mW
RJA Thermal Resistance Junction to Ambient Air 375 mW
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
VF Forward Voltage (IF=100mA)
(IF=200mA) ---
--- ---
--- 1.00
1.25 V
IR
Leakage Current
(VR=100V) BAV19W
(VR=100V, Tj=100OC) BAV19W
(VR=150V) BAV20W
(VR=150V, Tj=100OC) BAV20W
(VR=200V) BAV21W
(VR=200V, Tj=100OC) BAV21W
---
---
---
---
---
---
---
---
---
---
---
---
100
15
100
15
100
15
nA
uA
nA
uA
nA
uA
rf Dynamic Forward Resistance
(IF=10mA) --- 5.0 --- OHM
Ctot Capacitance
(VR=0, f=1.0MHz) --- 1.5 --- pF
trr Reverse Recovery Time
(IF=30mA, IR=30mA)
(Irr=3.0mA, RL=100OHMS) --- --- 50 ns
*(1) Valid provided that leads are kept at ambient temperature
DIMENSIONS
INCHES MM DIM MIN MAX MIN MAX NOTE
A .140 .152 3.55 3.85
B .100 .112 2.55 2.85
C .055 .071 1.40 1.80
D ----- .053 ----- 1.35
E .012 .031 0.30 .78
G .006 ----- 0.15 -----
H ----- .01 ----- .25
J ----- .006 ----- .15
0.036”
0.093"
0.048”
SUGGESTED SOLDER
PAD LAYOUT
A
B
E
C
J
D
H
G
SOD123
omponents
21201 Itasca Street Chatsworth
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MCC
www.mccsemi.com
MCC
www.mccsemi .com
BAV19W thru BAV21W
Ω
MCC
BAV19W thru BAV21W
www.mccsemi .com
