Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
UMR12N
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Small mold type. (UMD6)
2) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=80V
Ct - - 3.5 pF VR=6V , f=1MHz
Capacitance between terminals
Parameter Conditions
Forward voltage
Reverse current
Storage temperature 55 to 150
Power dissipation 200
Junction temperature 150
Average rectified forward current (Single) 100
Surge current (t=1us) 4
Reverse voltage (DC) 80
Forward current (Single) 200
Parameter Limits
Reverse voltage (repetitive peak) 80
UMD6
0.35
0.9
1.6
0.650.65
2.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
　　　　　 0
3.5±0.05 1.75±0.1
8.0±0.2
φ1.1±0.1
2.45±0.1
2.4±0.1
5.5±0.2
1.15±0.1
2.4±0.1
0.3±0.1
0～0.5
ROHM : UMD6
JEITA : SC-88
JEDEC : SOT-363
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.25±
0.1
0.05
各リードとも
同寸法
(5)(6) (4)
1.3±0.1
0.65 0.65
(1) (3)(2)
0.15±0.05
0.9±0.1
0.7
0.1Min
0～0.1
Each lead has same dimension
1/3 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMR12N 　
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000 1100 1200
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=150℃
Ta=125℃
D2
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
D1
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000 1100
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=150℃
Ta=75℃
D1
0.0001
0.001
0.01
0.1
1
10
100
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
D2
0.1
1
10
012345678910
f=1MHz
0.1
1
10
012345678910
f=1MHz
940
950
960
970
980
990
D1
AVE:961.5mV
Ta=25℃
IF=100mA
n=30pcs
1010
1020
1030
1040
1050
1060
D2
AVE:1035.0mV
Ta=25℃
IF=100mA
n=30pcs
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
D1
Ta=25℃
VR=15V
n=30pcs
AVE:0.1065nA
0
1
2
3
4
5
6
7
8
9
10
D2
Ta=25℃
VR=15V
n=30pcs
AVE:0.620nA
0
1
2
3
4
5
Ct32
AVE:3.34pF
Ta=25℃
VR=0V
f=1MHz
n=10pcs
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.1
1
10
012345678910
Ct12 f=1MHz
Ct32 Ct13
2/3 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMR12N 　
0.1
1
10
1 10 100 1000
t
Ifsm
0
1
2
3
4
5
Ct13
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
D2
0
10
20
30
40
0246810
REVERSE RECOVERY TIME:trr(ns)
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
FORWARD CURRENT:IF(mA)
trr-IF CHARACTERISTICS
VR=6V
D2
D1
VR=6V
D2
D1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=50mA
300us
time
Mounted on epoxy board
0
1
2
3
4
5
6
7
8
9
10
D1
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:0.670kV
AVE:6.43kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:1.87kV
AVE:13.56kV
Ct DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
AVE:3.64pF
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0
1
2
3
4
5
Ct12
AVE:1.86pF
Ta=25℃
VR=0V
f=1MHz
n=10pcs
3/3 2011.06 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes