BC638ZL1G - ON Semiconductor - Datasheet.Directory

September, 2005 − Rev. 2 1Publication Order Number:

BC638/D

BC638, BC640, BC640−16

High Current Transistors

PNP Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage BC638

BC640

VCEO −60

−80

Vdc

Collector-Base Voltage BC638

BC640

VCBO −60

−80

Vdc

Emitter-Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−0.5 Adc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance,

Junction−to−Case RqJC 83.3 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−92

CASE 29

STYLE 14

COLLECTOR

BASE

EMITTER

MARKING DIAGRAMS

AYWW G

BC6x = Device Code

x = 3 or 4

BC640−16 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

BC64

0−16

AYWW G

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

BC638, BC640, BC640−16

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping

BC638 TO−92 5000 Units / Box

BC638G TO−92

(Pb−Free) 5000 Units / Box

BC638ZL1 TO−92 2000 Units / Ammo Box

BC638ZL1G TO−92

(Pb−Free) 2000 Units / Ammo Box

BC640 TO−92 5000 Units / Box

BC640G TO−92

(Pb−Free) 5000 Units / Box

BC640ZL1 TO−92 2000 Units / Ammo Box

BC640ZL1G TO−92

(Pb−Free) 2000 Units / Ammo Box

BC640−16 TO−92 5000 Units / Box

BC640−16G TO−92

(Pb−Free) 5000 Units / Box

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0) BC638

BC640

V(BR)CEO −60

−80 −

−−

−

Vdc

Collector − Base Breakdown Voltage

(IC = −100 mAdc, IE = 0) BC638

BC640

V(BR)CBO −60

−80 −

−−

−

Vdc

Emitter − Base Breakdown Voltage

(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc

Collector Cutoff Current

(VCB = −30 Vdc, IE = 0)

(VCB = −30 Vdc, IE = 0, TA = 125°C)

ICBO −

−−

−−100

−10 nAdc

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = −5.0 mAdc, VCE = −2.0 Vdc)

(IC = −150 mAdc, VCE = −2.0 Vdc) BC638

BC640

BC640−16

(IC = −500 mA, VCE = −2.0 V)

hFE 25

100

−

160

250

−

Collector − Emitter Saturation Voltage

(IC = −500 mAdc, IB = −50 mAdc) VCE(sat) −

−−0.25

−0.5 −0.5

−Vdc

Base − Emitter On Voltage

(IC = −500 mAdc, VCE = −2.0 Vdc) VBE(on) − − −1.0 Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) fT− 150 − MHz

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cob − 9.0 − pF

Input Capacitance

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cib −110 − pF

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.

BC638, BC640, BC640−16

http://onsemi.com

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

V, VOLTAGE (VOLTS)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

−1000

−1

−2

−5

−10

−20

−50

−100

−200

−500

−100−1 −2 −3 −4 −5 −7 −10 −20 −30−40 −50 −70

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

BC636

BC638

BC640

PD TA 25°C

PD TC 25°C

SOA = 1S

PD TC 25°C

PD TA 25°C

500

200

100

20−1 −3 −5 −10 −30 −50 −100 −300 −500 −1000

IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

VCE = −2 V

500

300

100

20−1 −10 −100 −1000

IC, COLLECTOR CURRENT (mA)

Figure 3. Current Gain Bandwidth Product

−1

−0.8

−0.6

−0.4

−0.2

0−1 −10

IC, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = −2 V

VCE(sat) @ IC/IB = 10

−0.2

−1.0

−2.2

−1.6

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

VCE = −2 VOLTS

DT = 0°C to +100°C

qV for VBE

−A

−B

−L

VCE = −2 V

−100 −1000

−1 −3 −5 −10 −30 −50 −100 −300 −500 −1000

BC638, BC640, BC640−16

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

STYLE 14:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

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BC638/D

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