[INMEIRSIL FEATURES Directly drives inductive loads High speed, high peak current switching Inherent current sharing capability when paralleled Directly interfaces to CMOS, DTL, TTI. logic Simple, straight-forward DC biasing Inherent protection from thermal runaway ABSOLUTE MAXIMUM RATINGS (Tag = 25C unless otherwise noted) Drain-source Voltage...........6-- eee eee vanes 60V Drain-gate Voltage.............0... ees Cee e uence 60V Continuous Drain Current (see note 1) .....:... 0.5A Peak Drain Current (see note 2) ..........,.... 1.0V Gate-source Forward Voltage ...............065 +15V Gate-source Reverse Voltage .................. 0.3V Continuous Device Dissipation at (or below) 25C Case Temperature...............-.005. 1.0W Linear Derating Factor ...............0005, BmWwW/C Operating Junction Temperature Range..............6. ~40 to +150C Storage Temperature Range.......... -40 to +150C Lead Temperature (1/16 in. from case for 10 sec) ............. +300C Note 1. Tc = 25C; controlled by typical ros(en) and maximum power dissipation. Note 2. Maximum pulse width 80sec, maximum duty cycle 1.0%. Note 3. The Drain-source diode is an integral part of the MOSFET structure. 2-3 VN10 KM n-Channel Enhancement-mode Vertical Power MOSFET APPLICATIONS LED and lamp drivers TTL and CMOS to high current interface High speed switches Line drivers Relay drivers Transformer drivers SCHEMATIC DIAGRAM (OUTLINE DWG. TO- 237) DRAIN | GATE kG 1 1 a (see note 3) ! ! ! SOURCE Body internally connected to source Drain common to tab $s GD CHIP TOPOGRAPHY Wal 5g > 7 mit he a7 6 mil SOURCE + f 60 mil ae VN10 KM INTERSIL ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) DUTY CYCLE, D= ty;ty POWER DISSIPATION DERATING Characteristic Min Wp Max Unit Test Conditions 1 BVpss Drain-Source Breakdown 60 v Vas = OV, Ip = 100 nA 2 Vestn) Gate Threshold Voltage 0.3 2.5 v Vos = Ves. Ip = 1mMA 3| | tess Gate-Body Leakage 10 nA | Vas = 10V, Vos = 0 T Note 2 4 A loss Zero Gate Voltage 10 uA Vps = 40V, Vag = 0 T Drain Current I 7 5 Cc 0.25 A Vos = 25V, Ves = 5V ID(on) ON-State Drain Current 6 : 0.50 : Vos = 25V, Vas = 10V - Note 1 7 Vosion) Drain-Source ON Voltage 2.5 Vv Ves = 10V, Ip = 0.5A 8 Gts Forward Transconductance 100 200 mmho Vos = 15V, Ip = 0.5A D 9 | Ciss Input Capacitance 48 10 A Coss Output Capacitance : 16 pF Vos = 25V, f = 1 MHz Ws) om) Crss Feedback Capacitance 2 Note 2 t 12 c [| 'ON Turn-ON Time 5 ns See Switching Times Test 2 toFF Turn-OFF Time 5 Circuit, page 2-42 NOTES: 1. Pulse test 80 ys pulse, 1% duty cycle. 2. Sample Test. THERMAL RESPONSE DC SAFE OPERATING REGION Te = 25C 1 10 g g z & Z C4 ae zs 2 01 53 g aw & 01 a as 2 zZz< zz 0.01 Fe 1.0 10 100 fe ty Vps DRAIN SOURCE VOLTAGE (VOLTS) 8 2| s, mw | & 2.01 0.01 01 1 10 100 1000 ty ~ TIME (msec) " INFINITE HEAT SINK a 2 o Pp POWER DISSIPATION(WATTS} = iy o 40 80 120 160 = 200 Note: For other 5000 family characteristic curves, see page 2-41. TTEMPERATURE-(C} - 24