ZXTP2012Z
Document number: DS33713 Rev. 5 - 2
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60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
BVCEO > -60V
IC = -4.3A High Continuous Current
RSAT = 32mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage VCE(SAT) < -65mV @ IC = -1A
hFE Specified Up to -10A for High Current Gain Hold Up
Complementary NPN Type: ZXTN2010Z
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Application
Emergency Lighting Circuits
Motor Driving (Including DC Fans)
Backlight Inverters
Power Switches
Gate Driving MOSFETs and IGBTs
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Ordering Information (Note 5)
Part Number
Compliance
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
ZXTP2012ZTA
AEC-Q101
7
12
1,000
ZXTP2012Z-13R
AEC-Q101
13
12
4,000
ZXTP2012ZQTA
Automotive
7
12
1,000
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
951 = Product Type Marking Code
Top View
Device Symbol
Top View
Pin Out
SOT89
C
E
B
Green
E
C
B
C
951
ZXTP2012Z
Document number: DS33713 Rev. 5 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Base Current
IB
-2
A
Continuous Collector Current
IC
-4.3
A
Peak Pulse Current
ICM
-15
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation (Note 7)
Linear Derating Factor
PD
2.1
16.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
83
C/W
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
60
C/W
Thermal Resistance, Junction to Leads (Note 8)
RθJL
3.23
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm x 50mm single sided 1oz weight copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTP2012Z
Document number: DS33713 Rev. 5 - 2
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Thermal Characteristics and Derating Information
100m 110 100
10m
100m
1
10
Single Pulse. TA=25oC
25X25mm PCB 1oz copper
VCE(SAT)
Limit
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
25X25mm PCB
1oz copper
50X50mm PCB
1oz copper
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
20
40
60
80 25X25mm PCB 1oz copper
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s) 100μ 1m 10m 100m 110 100 1k
1
10
100 Single Pulse. TA=25oC
25X25mm PCB 1oz copper
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
µ
µ
ZXTP2012Z
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-100
-120
—
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCER
-100
-120
—
V
IC = -1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-60
-80
—
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8.1
—
V
IE = -100µA
Collector Cutoff Current
ICBO
—
< -1
—
-20
-500
nA
nA
VCB = -80V
VCB = -80V, TA = +100°C
Collector Cutoff Current
ICER
R ≤ 1kΩ
—
< -1
—
-20
-500
nA
nA
VCB = -80V
VCB = -80V, TA = +100°C
Emitter Cutoff Current
IEBO
—
< -1
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 9)
hFE
100
100
45
10
250
200
90
25
—
300
—
—
—
IC = -10mA, VCE = -1V
IC = -2A, VCE = -1V
IC = -5A, VCE = -1V
IC = -10A, VCE = -1V
Collector-Emitter Saturation Voltage (Note 9)
VCE(SAT)
—
-14
-50
-75
-160
-20
-65
-110
-215
mV
IC = -100mA, IB = -10mA
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage (Note 9)
VBE(SAT)
—
-950
-1050
mV
IC = -5A, IB = -500mA
Base-Emitter Turn-on Voltage (Note 9)
VBE(ON)
—
-840
-950
mV
IC = -5A, VCE = -1V
Transitional Frequency (Note 9)
fT
—
120
—
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
COBO
—
48
—
pF
VCB = -10V, f = 1MHz
Switching Time
tON
—
39
—
ns
VCC = -10V, IC = -1A,
IB1 = -IB2 = -100mA
tOFF
370
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
ZXTP2012Z
Document number: DS33713 Rev. 5 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m 110
10m
100m
1
1m 10m 100m 110
0.0
0.1
0.2
0.3
0.4
0.5
1m 10m 100m 110
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 110
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 110
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
300
VCE(SAT) v IC
TA=25oC
IC/IB=50
IC/IB=20
IC/IB=10
-VCE(SAT) (V)
-IC Collector Current (A)
VBE(SAT) v IC
IC/IB=10
100oC
25oC
-55oC
-VCE(SAT) (V)
-IC Collector Current (A)
hFE v IC
VCE=1V
-55oC
25oC
100oC
Normalised Gain
-IC Collector Current (A)
25oC
VCE(SAT) v IC
IC/IB=10
100oC
-55oC
-VBE(SAT) (V)
-IC Collector Current (A)
VBE(ON) v IC
VCE=1V
100oC
25oC
-55oC
-VBE(ON) (V)
-IC Collector Current (A)
Typical Gain (hFE)
ZXTP2012Z
Document number: DS33713 Rev. 5 - 2
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
H1
EH
D1
B
e
c
L
A
D
8° (4X)
D2
E2
z
L1
R0.200
B1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
Y4
X2
Y1
X
YY2
Y3
G
C
X1
SOT89
Dim
Min
Max
Typ
A
1.40
1.60
1.50
B
0.50
0.62
0.56
B1
0.42
0.54
0.48
c
0.35
0.43
0.38
D
4.40
4.60
4.50
D1
1.62
1.83
1.733
D2
1.61
1.81
1.71
E
2.40
2.60
2.50
E2
2.05
2.35
2.20
e
-
-
1.50
H
3.95
4.25
4.10
H1
2.63
2.93
2.78
L
0.90
1.20
1.05
L1
0.327
0.527
0.427
z
0.20
0.40
0.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
1.500
G
0.244
X
0.580
X1
0.760
X2
1.933
Y
1.730
Y1
3.030
Y2
1.500
Y3
0.770
Y4
4.530
ZXTP2012Z
Document number: DS33713 Rev. 5 - 2
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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