SIE D MM 8136671 0003456 116 MBSEKG SEMIKRON INC SEMIKRON Vrsm | VRRM ( dv ) trams (maximum values for continuous operation) Vorm | \ dt Jor 1000 A | 1200 A Itav (sin. 180; Tcase = . . .; DSC) Vv Vv V/us 640 A (58 C) 765 A (61 C) 500 | 400] 500 SKT 491/04 D - 900 | 800} 500 SKT 491/08 D - 1300 | 1200 500 SKT 491/12 D SKT 551/12 D 1000 SKT 491/12 E SKT 551/12 E 1500 | 1400 | 1000 SKT 491/14 E SKT 551/14 E 1700 ; 1600 | 1000 SKT 491/16 E SKT 551/16 E 1900 | 1800 | 1000 SKT 491/18 E* SKT 551/18 E* Symbol] Conditions SKT 491 SKT 551 ITAV sin. 180; (Tease =... ), DSC 490A 550A (80 C) (85 C) ITs Ty= 25C 8000 A 9000 A Ty = 125 C 7000 A 8000 A Pt Ty= 25C 320 000 As| 405 000 As Ty = 125 C 245 000 As| 320 000 As toa Ty= 25C; la= 1A; dic/dt = 1 A/us typ. 1 ps tgr Vp = 0,67 - VpRM typ. 1 ps (di/dt)cr | |f =50...60 Hz 125 A/ us ly Ty= 25 C; typ./max. 150 mA/500 mA IL Ty= 25 C; Re = 33 Q; typ./max. 500 mA/2 A tq Ty = 125 C typ. 50 ..: 150 ps VT Ty = 25 C; It = 1500 A; max. 21V. 1,65 V Varo) | Ty = 125 C 1,1V 0,925 V IT Ty = 125 C 0,7 mQ 0,45 mQ Ipp, IRD | Ty = 125 C; Vop = Vorm; Vap = VarM 50 mA 50 mA Vet Ty= 25C 3V lat Ty = 25C 250 mA Vep Ty = 125 C 0,25 V len =| Ty = 125 C 10 mA Rihic cont.; 0,045 C/W sin. 180; DSC/SSC 0,047/0,100 C/W rec. 120; DSC/SSC 0,054/0,113 C/W Rthch DSC/SSC 0,012/0,024 C Ty 40... + 125C Tstg 40...4+ 130C F SI units 5,2 ... 8 KN US units 1200 ... 1800 Ibs. w 105g Case |- page B 3-32 Bit * Available in limited quantities T7S20 Thyristors SKT 491 SKT 551 Features e Hermetic metal/ceramic cases Capsule packages for double sided cooling Shallow design with single sided cooling e International standard cases e Off-state and reverse voltages up to 1800 V Amplifying gates Typical Applications DC motor control (e. g. for machine tools) Controlled rectifiers (e. g. for battery charging) AC controllers (e. g. for temperature control) by SEMIKRON B3-37 SLE D MM 41356671 0003497 O52 MSEKG SEMIKRON INC T~25-20 1500 1500 wl TSKT 491 j w 1000 1000 500 500 Pray Pray 0 0 O Iqy 200 400 600 A 0 Tynb 50 100 c 4150 Fig. 1a Power dissipation vs. on-state current and ambient temperature 1500 in. 1500 wHtSKT 5551 : -Sciw w 1000 1000 500 500 Pray Pray 0 0 Itay 200 400 600 800 A 0 Tomb 50 100 C 180 Fig. 1 b Power dissipation vs. on-state current and ambient temperature 750 500 A Ss T491 A DSC 400 500 300 200 250 100 lav lav 0 0 Tease 50 100 C 150 0 lease 50 100 oC 150 Fig. 2a Rated on-state current vs. case temperature Fig. 2b Rated on-state current vs. case temperature B3-38 by SEMIKRON SLE D MM 6136671 0003498 T99 MBSEKG SEMIKRON INC SEMIKR 1000 A SKT 551 DSC 800 180 rec. 120 600 400 200 Nav 0 Tease 50 100 c 150 Fig. 2c Rated on-state current vs. case temperature 3 vc SKT 491 SKT 551 =125 1000 100 Or 30 1- 3 10 30 Ajpst00 Fig. 3 Recovered charge vs. current decrease 0,20 C SKT 491 w SKT 551 O18 010 0,05 Rthjc 0 0 @ 30 60 90 420 150 180 Fig. 5 Thermal resistance vs. conduction angle {-25-20 SKT 551 400 300 200 100 lav 0 Tease 50 100 c 450 Fig. 2d Rated on-state current vs. case temperature 0,075 s SKT 491 SKT 551 = Zehiz Dse 0,05 sin [rec 007 0,025 DSC Z(th)t Gost 102 10 101 Fig. 4 Transient thermal impedance vs. time s 102 2000 A 1500 1000 500 it o Oo vy 1 2 v3 Fig. 6 a On-state characteristics N by SEMIKRON B3-39 SLE D MM 8236672 ~ SENIKRON INC 0003499 925 MBSEKG T-25-20 2000 1600 1000 500 tT 0 Fig. 6 b On-state characteristics vy (08 1 18 2 V5 4 kW SKT 551 Pray 500 1000 Fig. 7b Power dissipation vs. on-state current A 1500 oO 0 Itav 3 5 2 SKT 491 SKT 551 = yb woaa <2 10 Oat 10" 10 2346 Fig. 9 Gate trigger characteristics Ig2 3465 23465 4000 Ww 3000 2000 1000 Pray 0 0 lw 500 1000 A Fig. 7 a Power dissipation vs. on-state current 'tiov) I TSM, (A 25C 125C 000 7000 1,6 8 14 1,2 0,8 0.6 04 t 10! Fig. 8 Surge overload current vs. time 10 ms lip) 2 345 2348 A10* 1500 103 B3-40 by SEMIKRON