2MOS AO This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Applications Switching power supplies DC to DC inverters e CMOS and TTL to high current interface Line drivers . Logic buffers e Pulse amplifiers High frequency linear amplifiers Features [= = | 2N6660,1 FIELD EFFECT POWER TRANSISTOR 1.2 AMPERES 60, 90 VOLTS RDS(ON) = 3.0 2 N-CHANNEL pb CASE STYLE TO-205AD(TO-39) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.950-0.370 0.318-0.335 y *1178.007-8.508) (6.880-9.398) 0.019-0.033 0.240-0.260 7 (6.006-6.604) (0.489+0.898) SEATING : 4 y _*~PLANE 0.009-0.018 [1 |, pa DRAIN | (0.229-0.457) GATE aon SOURCE 0.500 -0.016-0.01 T2706) -(0.d06-0.483) 0.190-0.210 (4.826-5.334) High speed, high current switching 0.028-0.048, \ e Current sharing capability when paralleled (9:787-1.148) J e Directly interface to CMOS, DTL, TTL logic cernoase YY Simple DC biasing e Extended safe operating area e Inherently temperature stable A Se TERM. Typical ton and toff < 5ns maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL 2N6660 2N6661 UNITS Drain-Source Voltage Vpss 60 90 Volts Drain-Gate Voltage, Ras = 1MO. VpGR 60 90 Volts Continuous Drain Current @ Ta = 25C Ip 1.2 1.2 A Peak Drain Current IDM 3.0 3.0 A Gate-Source Voltage Vas +30 +30 Volts Total Power Dissipation @ Ta = 25C Pp 6.25 6.25 Watts Derate Above 25C 50 50 mWw/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Ambient Raa 20C 20xC C/W Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 Seconds Th 300 300 C (1) Repetitive Rating: Puise width limited by max. junction temperature. 335 electrical characteristics (T, = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage 2N6660 BVpss 90 _ _ Volts (Ves = OV, Ip = 10 wA) 2N6661 60 _ _ (Vgs = OV, Ip = 2.5 MA) 2N6660 90 _ 2N6661 60 _ _ Zero Gate Voltage Drain Current Ipss _ 10 BA (Vps = Max Rating, V@g = OV) _ 500 (Vps = Max Rating, x 83, Vas = OV, Ta = 125C) Gate-Source Leakage Current (Vas = 15V, Vps = OV) less _ _ 100 nA (Vgs = 15V, Vps = OV - Ta = 125 C) _ 500 on characteristics Gate Threshold Voltage VGS(TH) 0.8 _ 2.0 Volts (Vos = Ves. !p = 1 mA) Drain-Source Saturation Voltage 2N6660 | VpS(ON) _ _ 1.5 Volts (Vgs = 5V, Ip = 0.3A) 2N6661 _ _ 1.6 Drain-Source Saturation Voltage 2N6660 | Vps(ON) _ _ 3.0 Volts (Vag = 10V, Ip = 1.0A) 2N6661 _ _ 4.0 On-State Drain Current ID(ON) 1.0 _ _ Amp (Vpg = 25V, Vag = 10V) Forward Transconductance dynamic characteristics Input Capacitance Vas = OV, Vps = 25V Ciss _ _ 50 pF Output Capacitance f= 1 MHz Coss _ 40 pF Reverse Transfer Capacitance Vos = OV, Vas = OV Crss _ 10 pF f = 1.0 MHz Crss _ _- 35 pF switching characteristics Turn-on Delay Time See switching times td(on) _ 2 5 ns Rise Time waveform below tr _ 2 5 ns Turn-off Delay Time td(off) _ 2 5 ns Fall Time tt _ 2 5 ns Pulse Test: Pulse width < 300 us, duty cycle <= 2% PULSE WIDTH ~+ 90% 50% 10% INPUT e ton | td }- OUTPUT 10% 90% 90% N ~- toff td 50% Xe 10% 5 90% 10% SWITCHING TIME TEST WAVEFORMS 336