1
MRF166WMOTOROLA RF DEVICE DATA
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
500 MHz.
•Push–Pull Configuration Reduces Even Numbered Harmonics
•Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
Efficiency = 50%
•Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
•Excellent Thermal Stability, Ideally Suited for Class A Operation
•Facilitates Manual Gain Control, ALC and Modulation Techniques
•100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
•Low Crss — 4.5 pF @ VDS = 28 Volts
•Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–Gate Voltage VDSS 65 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc
Gate–Source Voltage VGS ±40 Adc
Drain Current — Continuous ID8.0 ADC
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD175
1.0 Watts
°C/W
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case RθJC 1.0 °C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF166W/D
SEMICONDUCTOR TECHNICAL DATA
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
FLANGE
1
5
2
3
4
Motorola, Inc. 1994
REV 1
MRF166W
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 5.0 mA) V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1.0 mA
Gate–Source Leakage Current
(VGS = 40 Vdc, VDS = 0 Vdc) IGSS — — 1.0 µA
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS= 10 Vdc, ID = 25 mA) VGS(th) 1.0 3.0 6.0 Vdc
Forward Transconductance
(VDS= 10 Vdc, ID = 1.5 A) gfs 600 800 — mS
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 30 — pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 35 — pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss — 4.5 — pF
FUNCTIONAL CHARACTERISTICS (2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) Gps 11 13 — dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) η45 50 — %
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA)
Load VSWR = 30:1, All phase angles at frequency of test
ΨNo Degradation in Output Power
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.
3
MRF166WMOTOROLA RF DEVICE DATA
Figure 1. MRF166 400 MHz Test Circuit Schematic
C1, C2, C8, C9, 270 pF, Chip Cap
C12, C13, C15
C3 5.6 pF, Chip Cap
C4 20 pF, Chip Cap
C5 0 – 20 pF, Johanson*
C6 8.2 pF, Chip Cap
C7 15 pF, Chip Cap
C10, C11, C14, C19, 0.01 µF
C20, C21, C22
C16, C17 680 pF, Feedthru
C18 10 µF, 50 V
C23 0 – 10 pF, Johanson*
D1 IN5343 – Motorola Zener
L1, L2 Hair Pin Inductor #18 AWG,
0.065 W x 0.265 H
L3, L4 Hair Pin Inductor #18 AWG,
0.116 W x 0.445 H
RFC1 Ferroxcube VK–200–19/4B
RFC2, RFC3 10T, ID = 1/4″, 18 AWG
R1 10 kΩ, 10T
R2 9.2 kΩ, 1/2 W
R3, R6 330 Ω, 1.0 W
R4 R5 520 Ω, 1/4 W
R7 1.5 kΩ, 1/2 W
T1, T2 Balun 2.0″, 50 Ω Semi–Rigid Coax
Z1, Z2 0.120 x 0.467″
Z3, Z4 0.120 x 0.55″ *
Z5, Z6 0.120 x 0.49″
Z7, Z9 0.120 x 0.85″
Z8, Z10 0.120 x 0.6″ for C6
* C4, C5 Center of Z3 and Z4
Board Material – Teflon
Fiberglass
Dielectric Thickness = 0.030
″
,
ε
r = 2.55
Copper Clad, 2.0 oz. Copper
L3, L4 0.065
″
0.116
″
0.455
″
0.265
″
L1, L2
+
–
+
–
L3
C23
C3
Z2
T1
C2 L1 Z3
Z5
D1
C14 C22
R7
C13
R4
RFC1
C16 C17 C18 Vdc
VDD 28 V
RF OUTPUT
Z8 C8
RFC2
R1
Z7
C15
Z1
C1 L2
C20 C12
C21 C10
C11
C7C6
C9
Z9
C19
RF INPUT
Z4 L4
C5
C4 Z6
R5
R2
B
Z10
D.U.T.
B
A
T2
A
RFC3
R3
R6
A
MRF166W
4MOTOROLA RF DEVICE DATA
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Pin, INPUT POWER (WATTS)
P
out , OUTPUT POWER (WATTS)
01234
50
0
Figure 2. Output Power versus Input Power
f = 175 MHz
40
30
15
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
P
out , OUTPUT POWER (WATTS)
12 14 18 22 28
45
0
Figure 3. Output Power versus Voltage
24 2616 20
f = 400 MHz
IDQ = 100 mA
35
25
15
5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
P
out , OUTPUT POWER (WATTS)
–10 – 9 –7 – 5 – 3 –1 3
40
0
Figure 4. Output Power versus Gate Voltage
– 4 – 2– 8 – 6
f = 400 MHz
35
30
20
10
C, CAPACITANCE (pF)
0 4 12 20
100
0
Figure 5. Capacitance versus Voltage
248 16
90
70
40
20
10
30
50
60
80
012
5
15
25
40
30
20
10
45
25
20
35
400 MHz
500 MHz
VDD = 28 Vdc
IDQ = 200 mA
VDD = 28 Vdc
IDQ = 100 mA
TYPICAL DEVICE SHOWN,
VGS(th) = 3.0 V Coss
Ciss
VGS = 0 V
f = 1.0 MHz
Crss
28
Pin = 3.0 W
2.0 W
1.0 W
0.5 W
5
Figure 6. Series Equivalent Input/Output Impedance
VDD = 28 Vdc, IDQ = 100 mA, Pout = 40 W
ZOL* = Conjugate of the optimum load impedance into which the device
output operates at a given output power, voltage and frequency.
NOTE: Input and output impedance values given are measured from gate to
gate and drain to drain respectively.
5
MRF166WMOTOROLA RF DEVICE DATA
400 ZOL*
Zin
Zo = 50
Ω
175
f = 500 MHz
f = 500 MHz
400
175
f
MHz Zin
Ohms ZOL*
Ohms
175 3.7 – j 22.4 15.2 – j 16.6
400 3.6 – j 10.99 10.3 – j 7.99
500 2.6 – j 3.2 10.2 + j 0.5
Table 1. Input and Output Impedances
MRF166W
6MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 412–01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
1 2
3 4 5
K
D4 PL
G
UQ2 PL
–A–
–B–
M
A
M
0.51 (0.020) B M
T
M
A
M
0.51 (0.020) B M
T
J
H
NE
C
SEATING
PLANE
–T–
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.965 0.985 24.52 25.01
B0.245 0.265 6.23 6.73
C0.165 0.185 4.20 4.69
D0.050 0.070 1.27 1.77
E0.070 0.080 1.78 2.03
G0.254 BSC 6.45 BSC
H0.095 0.105 2.42 2.66
J0.003 0.006 0.08 0.15
K0.625 0.675 15.88 17.14
N0.495 0.520 12.58 13.20
Q0.120 0.140 3.05 3.55
U0.725 BSC 18.42 BSC
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MRF166W/D
*MRF166W/D*
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