TIG052TS
No. A1258-1/5
Features
•Low-saturation voltage.
•Low voltag drive (2.5V).
•Enhansment type.
•Built-in Gate-to-Emitter protection diode.
•Mounting Height 1.1mm, Mounting Area 19.2mm2.
•dv / dt guarantee.*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Emitter Voltage VCES 400 V
Gate-to-Emitter Voltage (DC) VGES ±6V
Gate-to-Emitter Voltage (Pulse) VGES PW≤1ms ±8V
Collector Current (Pulse) ICP
PW≤500μs, duty cycle≤0.5%, CM=400μF, VGE=2.5V
150 A
Maximum Collector-to-Emitter dv / dt dVCE / dt VCE≤320V, starting Tch=25°C 400 V / μs
Channel Temperature Tch 150 °C
Storage Temperature Tstg --40 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=2mA, VGE=0V 400 V
Collector-to-Emitter Cutoff Current ICES VCE=320V, VGE=0V 10 μA
Gate-to-Emitter Leakage Current IGES VGE=±6V, VCE=0V ±10 μA
Marking : G052 Continued on next page.
* : Concerning dv/dt (slope of Collector Voltage at the time of Turn-OFF), dv/dt>400v/μs will be 100% screen-detected
in the circuit shown as Fig. 1.
Ordering number : ENA1258
80608PJ TI IM TC-00001524
SANYO Semiconductors
DATA SHEET
TIG052TS N-Channel IGBT
Light-Controlling Flash Applications
www.semiconductor-sanyo.com/network
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
TIG052TS
No. A1258-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Gate-to-Emitter Threshold V oltage VGE(off) VCE=10V, IC=1mA 0.4 1.0 V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=150A, VGE=2.5V 3.7 5.5 V
Input Capacitance Cies VCE=10V, f=1MHz 3800 pF
Output Capacitance Coes VCE=10V, f=1MHz 58 pF
Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 47 pF
Package Dimensions Electrical Connection
unit : mm (typ)
7006A-007
Fig.1 Large Current R Load Switching Circuit
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
6.4
3.0
0.65
4.5 0.95
0.95
0.5
0.125
85
14
0.25
0.425
0.05 1.0
1234
8765
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
100kΩ
CM=400μF
RL
RG
VCC=320V
+
TIG052TS
2.5V
0V
Note1.Gate Series Resistance RG≥82Ω is recommended for prolection purpose at the time of turn OFF. However,
if dv / dt≤400V / μs is satisfied at customer’s actual set evaluation, RG<82Ω can also be used.
Note2.The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
TIG052TS
No. A1258-3/5
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VGE
Gate-to-Emitter Voltage, VGE -- V
Collector Current, IC -- A
Case Temperature, Tc -- °C
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
VGE(off) -- Tc
Collector-to-Emitter Voltage, VCE -- V
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V Case Temperature, Tc -- °C
VCE(sat) -- Tc
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
Collector-to-Emitter Voltage, VCE -- V
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
SW Time -- ICP
Switching Time, SW Time -- ns
Collector Current (Pulse), ICP -- A
IT13812
0
0
20
40
60
80
120
140
160
180
100
200
IT13813
0
0
1.0 2.0 3.0 4.0 6.05.0 0.5
20
40
60
80
120
140
160
180
100
200
1.0 1.5 2.0 2.5 3.0 3.5
Tc=25°C
VGE=4.0V
3.0V
2.5V
VCE=5V
1.8V
75
°
C
Tc= --25°C
25°C
1
IT13816
012345
6
5
4
3
2
6
IC=150A
Tc=75°C
130A
100A
IT13814 IT13815
2
101
6
5
4
3
23456
Tc=25°C
IT13818
0 50 75 100 125 15025--25--50
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
130A
100A
IT13817
05075
100 125 15025--25--50
6
4
3
5
2
1
IC=150A
VGE=2.5V
23 57 32
100 IT13819
1000
5
3
2
7
5
3
2
7
100
tr
td(off)
td(on)
Circuit: refer to Fig.1
VGE=2.5V, VCC=320V,
RG=82Ω, CM=400μF,
1012345
6
5
4
3
2
6
IC=150A
Tc=--25°C
130A
100A
IC=150A
130A
100A
tf
PW=50μs
TIG052TS
No. A1258-4/5
IT13847
245678310
0
20
40
60
80
100
120
140
160
SW Time -- RG
Switching Time, SW Time -- ns
Collector Current (Pulse), ICP -- A
Maximum Capacitor, CM -- μF
CM -- ICP
ICP -- VGE
Gate-to-Emitter Voltage, VGE -- V
Collector Current (Pulse), ICP -- A
IT13824
20 40 60 80 100 120 1400 160
50
0
100
150
200
250
300
350
400
450
VGE=2.5V
VCM=320V
Tc≤70°C
Gate Series Resistance, RG -- ΩCollector-to-Emitter Voltage, VCE -- V
Cies, Coes, Cres -- pF
Cies, Coes, Cres -- VCE
Turn OFF dv / dt -- RG
Gate Series Resistance, RG -- Ω
Turn OFF, dv / dt -- V / μs
01618206841214102
10
100
7
5
3
2
1000
7
5
3
2
10000
7
5
3
2
IT13821
Cies
Coes
Cres
23 57732
10010 IT13820
1000
7
7
5
3
5
3
2
2
100
3
2
tr
td(off)
td(on)
tf
f=1MHz
Circuit: refer to Fig.1
VGE=2.5V, VCC=320V,
ICP=150A, CM=400μF,
PW=50μs
VCM=320V
CM=400μF
Tc≤70°C
IT13822
40 120 140 1608060 100200
0
100
200
300
400
500
700
600
800 Circuit: refer to Fig.1
VGE=2.5V, VCC=320V,
ICP=150A, CM=400μF,
PW=50μs
TIG052TS
No. A1258-5/5
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Note : TIG052TS has protection diode between gate and emitter but handling it requires sufficient care to
be taken.
This catalog provides information as of August, 2008. Specifications and information herein are subject
to change without notice.
