ABB Semiconductors AG reserves the right to change specifications without notice.
VSM = 4200 V
ITAVM = 1920 A
ITRMS = 3020 A
ITSM = 32000 A
VT0 =0.96V
rT= 0.285 m
Bi-Directional Control Thyristor
5STB 18N4200
Doc. No. 5SYA1040-03 Sep. 01
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 18N4200 5STB 18N4000 5STB 18N3600 Conditions
VSM 4200 V 4000 V 3600 V f = 5 Hz, tp = 10ms
VRM 4200 V 4000 V 3600 V f = 50 Hz,tp = 10ms
ISM 400 mA VSM
IRM 400 mA VRM Tj = 125°C
dV/dtcrit 1000 V/µs @ Exp. to 0.67xVSM
VRM is equal to VSM up to Tj = 110°C
Mechanical data
FMMounting force nom. 90 kN
min. 81 kN
max. 108 kN
aAcceleration
Device unclamped
Device clamped
50
100
m/s2
m/s2
mWeight 2.9kg
DSSurface creepage distance 53 mm
DaAir strike distance 22 mm
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1040-03 Sep. 01 page 2 of 5
On-state
ITAVM Max. average on-state
t
1920 A Half sine wave, TC = 70°C
ITRMS Max. RMS on-state current 3020 A
ITSM Max. peak non-repetitive 32000 A tp = 10 ms T
j
= 125°C
surge current 35000 A tp = 8.3 ms After surge:
I2t Limiting load integral 5120 kA2stp= 10msV
D = VR = 0V
5000 kA2stp= 8.3ms
VTOn-state voltage 1.53 V IT= 2000 A
VT0 Threshold voltage 0.96 V IT= 1000 - 3000 A T
j
= 125°C
rTSlope resistance 0.285 m
IHHolding current 50-250 mA Tj= 25°C
25-150 mA Tj= 125°C
ILLatching current 100-500 mA Tj= 25°C
50-300 mA Tj= 125°C
Switching
di/dtcrit Critical rate of rise of on-state 250 A/µs Cont. f = 50 Hz VD 0.67VDRM , Tj = 125°C
current 500 A/µs ITRM = 3000 A60 sec.
f = 50Hz IFG = 2 A, tr = 0.5 µs
tdDelay time 3.0 µs VD = 0.4VDRM IFG = 2 A, tr = 0.5 µs
tqTurn-off time 550 µs VD 0.67VDRM ITRM = 3000 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = -1.5 A/µs
Qrr Recovery charge min 2100 µAs
max 3200 µAs
Triggering
VGT Gate trigger voltage 2.6 V Tj = 25°C
IGT Gate trigger current 400 mA Tj = 25°C
VGD Gate non-trigger voltage 0.3 V VD = 0.4VRM Tj = 125°C
IGD Gate non-trigger current 10 mA VD = 0.4VRM Tj = 125°C
VFGM Peak forward gate voltage 12 V
IFGM Peak forward gate current 10 A
VRGM Peak reverse gate voltage 10 V
PGMaximum gate power loss 3 W
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1040-03 Sep. 01 page 3 of 5
Thermal
TjOperating junction temperature range -40125 °C
Tstg Storage temperature range -40150 °C
RthJC Thermal resistance 22.8 K/kW Anode side cooled
junction to case 22.8 K/kW Cathode side cooled
11.4 K/kW Double side cooled
RthCH Thermal resistance case to 4 K/kW Single side cooled
heat sink 2 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1234
Ri(K/kW) 6.77 2.51 1.34 0.78
τi(s) 0.8651 0.1558 0.0212 0.0075
0.001 0.010 0.100 1.000 10.00
0
t[s]
0
5
10
15
Z
thJC
[K/kW]
BN1
180° sine: add 1 K/kW
180° rectangular: add 1 K/kW
120° rectangular: add 1K/kW
60° rectangular:
add
2
K/kW
F
m
=81..108 kN
Double-side cooling
Fig. 1 Transient thermal impedance junction to case.
Fig. 2 On-state characteristics. Fig. 3 On-state characteristics.
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1040-03 Sep. 01 page 4 of 5
0 500 1000 1500 2000 2500 3000
I
T
A
V
(
A
)
70
75
80
85
90
95
100
105
110
115
120
125
130
T
case
(°C)
DC
180°
rectangular
180°
sine
120°
rectangular
5STB
18N4200
Double-sided
cooling
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STB 18N4200
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1040-03 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.