SMALL SIGNAL REVERSE VOLTAGE - 75 Volts
SWITCHING DIODE FORWARD CURRENT - 0.15Amperes
FEATURES
● Silicon epitaxial planar diode
● High speed switching diode
● 500mW power dissipation
MECHANICAL DATA
●Case: Mini-MELF glass case
●Polarity: Color band denotes cathode
●Weight : Approx.0.05 grams
Dimensions in inches and (millimeters)
UNIT
Reverse Vltage VRV
Peak Reverse Voltage VRM V
Average Forward Rectified Current
Half Wave Rectification with Resist .load
at Tamb=25℃ and f≧50HZ
Forward Surge Current at t＜1s and TJ=25℃IFSM mA
Power Dissipation at Tamb=25℃Ptot mW
Junction Temperature TJ℃
Storage Temperature Range TSTG ℃
UNIT
Forward Voltage at IF=10mA VF V
Leakage Current
at VR=20V IRuA
at VR=75V
I
R
uA
at VR=20V TJ=150℃
I
R
uA
Capacitance at VF=VR=0V Ctot pF
Voltage Rise When Switching ON
Tested With 50mA Pulses
tp=0.1us.Rise Time<30ns.fp=5to 100HZ
Reverse Recovery Time From IF=10mA
VR=6V. RL=100Ω at IR=1mA
Thermal Resistance Junction to Ambient RθJA K/W
Rectification Effciency at 100MHZ VRF=2V ηV﹣
v
ns
mAIO
Vfr
trr
﹣
-
500(1)
175
﹣65 to﹢175
LL4148
4
2.5
25
5
50
ELECTRICAL CHARACTERISTICS
NOTE:(1) Valid provided that electrodes are kept at ambient temperature .
MAX
1
﹣
﹣
LL4148
75
100
150
500
4
350(1)
TYP
﹣
﹣
﹣
﹣﹣
﹣
﹣
~ 416 ~
0.45
﹣
﹣
﹣
﹣
﹣
NOTE:(1)Valid provided that electrodes are kept at ambient temperature.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
﹣
MIN
-
DL - 35
.055(1.4)
.063(1.6)
.020(0.5)
.012(0.3).012(0.3)
.020(0.5)
.146(3.7)
.130(3.3)
RATING AND CHARACTERISTIC CURVES
LL4148
~ 417 ~
0
10-2
10-1
10
102
103
12V
1
0
200
100
500
600
700
800
900
1000
0
150 200℃
400
300
mW
Ptot
TA
FLG.1-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
TJ = 100°C
TJ = 25°C
VF
I
F
FIG.2-FORWARD CHARACTERISTICS
IFRM
tp
FLG.3-ADMISSIBLE REPETITVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
10-2
10-3
10-5
0.1
1
10
100
10-1 110S
A
I
FRM
tp
T
RATING AND CHARACTERISTIC CURVES
LL4148
~ 418 ~
FIG.4-RECTIFICATION EFFICIENCY
MEASUREMENT CIRCUIT
D.U.T
V
O
60Ω
V
RF
=2V
=
5KΩ
2nF
IF
rF
FIG.7-DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
Ω
10-2
1m
10-1 1 10
10
2
10
102
103
104
FIG.5-RELATIVE CAPACITANCE
VERSUS VOLTAGE
VR
Ctot(VR)
Ctot(0V)
024 6 8 10V
0.7
0.8
0.9
1.0
1.1
TJ = 25°C
f = 1 MHz
Tj
IR
nA FIG.6-LEAKAGE CURRENT VERSUS
JUNCTION TEMPERATURE
0
1
℃
100 200
10
102
103
104