P NP S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H649A LOW FREQUANCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML Tstg----Storage Temperature.............................. -55~150 Tj----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 20W PC----Collector DissipationTA=25........................ 1W VCBO----Collector-Base Voltage.............................. -180V 1EmitterE 2CollectorC 3BaseB VCEO----Collector-Emitter Voltage........................... -160V VEBO----Emitter-Base Voltage................................. -5V IC----Collector CurrentDC.................................-1.5A Electrical CharacteristicsTa=25 Symbol Parameter Min HFE1 DC Current Gain 60 Typ Max Unit 200 VCE= -5V, IC= -150mA 30 HFE2 Test Conditions VCE= -5V, IC= -500mA V IC= -500mA, IB= -50mA -180 V IC= -1mA, IE=0 Collector-Emitter Breakdown Voltage -160 V IC= -10mA, IB=0 BVEBO Emitter- Base Breakdown Voltage -5 V IE= -1mA, IC=0 ICBO Collector-Base Cutoff Current A VCB= -160V, IE=0 fT Current Gain- Bandwidth Product 140 MHz VCE=-5V, IC=-150mA Cob Output Capacitance 27 pF VCB=-10V,IE=0,f=1MHz VCE(sat) Collector- Emitter Saturation Voltage BVCBO Collector-Base Breakdown Voltage BVCEO -1 -10 hFE Classification B 60--120 C 100--200