Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H649A
█ LOW FREQUANCY POWER AMPLIFIER
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
1―Emitter,E
2―Collector,C
3―Base,B
TO-126ML
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 20W
PC——Collector Dissipation(TA=25℃)…………………… 1W
VCBO——Collector-Base Voltage………………………… -180
VCEO——Collector-Emitter Voltage……………………… -160
VEBO——Emitter-Base Voltage…………………………… -5V
IC——Collector Current(DC)……………………………-1.5A
█ Electrical Characteristics(Ta=25℃)
Symbol Parameter Min Typ Max Unit Test Conditions
HFE(1) DC Current Gain 60 200
VCE= -5V, IC= -150mA
HFE(2) 30
VCE= -5V, IC= -500mA
VCE(sat) Collector- Emitter Saturation Voltage -1 V
IC= -500mA, IB= -50mA
BVCBO Collector-Base Breakdown Voltage -180 V IC= -1mA, IE=0
BVCEO Collector-Emitter Breakdown Voltage -160 V IC= -10mA, IB=0
BVEBO Emitter- Base Breakdown Voltage -5 V IE= -1mA, IC=0
ICBO Collector-Base Cutoff Current -10
μA VCB= -160V, IE=0
fT Current Gain- Bandwidth Product 140 MHz VCE=-5V, IC=-150mA
Cob Output Capacitance 27 pF VCB=-10V,IE=0,f=1MHz
█ hFE Classification
B C
60—120 100—200