TLP626,TLP626-2,TLP626-4
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP626,TLP626-2,TLP626-4
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA TLP626, 2 and 4 consist of gallium arsenide infrared
emitting diodes connected in inverse parallel, optically coupled to a
phototransistor.
The TLP6262 offers two isolated channels in an eight lead plastic DIP,
while the TLP6264 provides four isolated channels in a sixteen plastic
DIP.
Collectoremitter voltage: 55V(min.)
Current transfer ratio
Current Transfer Ratio(min.)
Ta = 25°C Ta = 25~75°C
Classi
fication IF = ±1mA
VCE = 0.5V
IF = ±0.5mA
VCE = 1.5V
IF = ±1mA
VCE = 0.5V
Marking
Of
Classi
fication
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, blank
Isolation voltage: 5000Vrms min.
UL recognized: UL1577, file no.E67349
BSI approved: BS EN60065: 2002 certificate no.7426
BS EN60950-1: 2002 certificate no.7427
Note: Application type name for certification test,
please use standard product type name, i.e.
TLP626(BV): TLP626
Pin Configuration (top view)
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
TLP626
1
2
4
3
1, 3, 5, 7 : Anode, Cathode
2, 4, 6, 8 : Cathode, Anode
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
TLP6264
1
2
16
15
3
4
14
13
5
6
12
11
7
8
10
9
1, 3 : Anode
Cathode
2, 4 : Cathode
Anode
5, 7 : Emitter
6, 8 : Collector
TLP6262
1
2
8
7
3
4
6
5
TOSHIBA 115B2
Weight: 0.26 g (typ.)
TOSHIBA 1110C4
Weight: 0.54 g (typ.)
TOSHIBA 1120A3
Weight: 1.1 g (typ.)
Unit in mm
TLP626,TLP626-2,TLP626-4
2007-10-01
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Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic Symbol
TLP626 TLP6262
TLP6264
Unit
Forward current IF 60 50 mA
Forward current derating ΔIF / °C 0.7(Ta 39°C) 0.5(Ta 39°C) mA / °C
Pulse forward current IFP 1(100μs pulse,100pps) A
Power dissipation (1 circuit) PD 100 70 mW
Power dissipation derating
(Ta 25°C, 1 circuit) ΔPD / °C 1.0 0.7 mW / °C
LED
Junction temperature Tj 125 °C
Collectoremitter voltage VCEO 55 V
Emittercollector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation (1 circuit) PC 150 100 mW
Collector power dissipation derating
(Ta 25°C, 1 circuit) ΔPC / °C 1.5 1.0 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg 55~125 °C
Operating temperature range Popr 55~100 °C
Lead soldering temperature Tsol 260(10s) °C
Total package power dissipation (1 circuit) PT 250 150 mW
Total package power dissipation derating
(Ta 25°C, 1 circuit) ΔPT / °C 2.5 1.5 mW / °C
Isolation voltage (Note 1) BVS 5000(AC, 1min., RH60%) V rm s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 24 V
Forward current IF(RMS) 1.6 20 mA
Collector current IC 1 10 mA
Operating temperature Topr 25 75 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP626,TLP626-2,TLP626-4
2007-10-01
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V
Reverse current IF V
F = ±0.7V 2.5 20 μA
LED
Capacitance CT V = 0, f = 1MHz 60 pF
Collectoremitter
breakdown voltage V(BR)CEO IC = 0.5mA 55 V
Emittercollector
breakdown voltage V(BR)ECO IE = 0.1mA 7 V
VCE = 24V 10 10 nA
Collector dark current ICEO
VCE = 24V, Ta = 85°C 2 50 μA
Detector
Capacitance collector
to emitter CCE V=0, f=1MHz 12 pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
100 1200
Current transfer ratio IC / IF
IF = ±1mA, VCE = 0.5V
rank BV 200 1200
%
50
Low input CTR IC / IF(low)
IF = ±0.5mA, VCE = 1.5V
rank BV 100
%
IC = 0.5mA, IF = ±1mA 0.4
0.2
Collectoremitter
saturation voltage VCE(sat) IC = 1mA, IF = ±1mA
rank BV 0.4
V
Offstate collector current IC(off) VF = ±0.7V, VCE = 24V 1 10 μA
CTR symmetry *1 IC(ratio) IC(IF = 1mA) / IC(IF = 1mA) 0.5 2
Coupled Electrical Characteristics (Ta = 2575°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
50
Current transfer ratio IC / IF
IF = 1mA, VCE = 0.5V
rank BV 100
%
50
Low input CTR IC / IF(low)
IF = 0.5mA, VCE = 1.5V
rank BV 100
%
*1
I
C(ratio) =
V)5
CE
V
F1,
I
F
(I
C1
I
V)5
CE
V
F2,
I
F
(I
C2
I
==
== IF1 IC2
IC1
VCE
IF2
TLP626,TLP626-2,TLP626-4
2007-10-01
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance input to output CS V
S = 0, f = 1MHz 0.8 pF
Isolation resistance RS V
S = 500V 5×1010 1014
AC, 1 minute 5000
AC, 1 second, in oil 10000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 10000 Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr 8
Fall time tf 8
Turnon time ton 10
Turnoff time toff
VCC = 10V, IC = 2mA
RL = 100
8
μs
Turnon time tON 10
Storage time ts 50
Turnoff time TOFF
RL = 4.7k (Fig.1)
VCC = 5 V, IF = ±1.6mA
300
μs
Fig. 1 Switching operating conditions
VCE
tON
IF
tOFF
VCC
4.5V
0.5V
tS
IF
RL
VCC
VCE
TLP626,TLP626-2,TLP626-4
2007-10-01
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ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF/ΔTa (mV/°C)
2.8
0.4
0.3 50
0.1
0.8
1.2
1.6
2.0
2.4
0.5 1 3 5 10 30
Pulse forward voltage VFP (V)
IFP – VFP
Pulse forward current IFP (mA)
1000
1
0
500
300
100
50
30
10
5
3
0.4 0.8 1.2 1.6 2.0 2.4
Pulse width 10 μs
Repetitive
Frequency = 100 Hz
Ta = 25 °C
120
Allowable forward current
IF (RMS) (mA)
IF – Ta
Ambient temperature Ta (°C)
100
0
20
80
60
40
20
0 20 40 60 80 100
TLP626
TLP6262, 4
Duty cycle ratio DR
Allowable pulse forward current
IFP (mA)
IFP – DR
5000
10
3000
1000
500
300
100
50
30
103 3 102 3 101 3 100
Pulse width 100 μs
Ta = 25 °C
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
PC – Ta
200
0
160
120
80
40
20 0 20 40 60 80 100 120
TLP626
TLP6262, 4
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.4
50
30
10
5
3
1
0.5
0.3
06 0.8 1.0 1.2 1.4 1.6
Ta = 25 ° C
TLP626,TLP626-2,TLP626-4
2007-10-01
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Current transfer ratio IC / IF (%)
IC / IF – IF
Forward current IF (mA)
1000
10
0.1
500
300
50
30
0.3 0.5 1 3 5 10
100
Ta = 25 °C
VCE = 5 V
VCE = 1.5 V
VCE = 0.5 V
Ambient temperature Ta (°C)
Collector current IC (mA)
IC – Ta
0.03 20
30
10
5
3
1
0.5
0.3
0 20 40 60 80 100
0.1
0.05
VCE = 1.5 V
VCE = 0.5 V
0.2 mA
0.5 mA
1mA
2 mA
IF = 2 mA
10
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
4.0
0
3.5
2.0
1.0
0.5
1.5
3.0
2.5
0.1 0.3 0.5 1 3 5
Ta = 25 °C IF = 1.0 mA
0.8 mA
0.6 mA
0.5 mA
0.4 mA
0.2 mA
IC – IF
Forward current IF (mA)
Collector current IC (mA)
50
0.01
0.1
0.5
0.3
0.05
0.03
0.3 0.5 1 3 5 10
0.1
30
10
5
3
1
T
a = 25 °C
V
CE = 5 V
V
CE = 1.5 V
V
CE = 0.5 V
TLP626,TLP626-2,TLP626-4
2007-10-01
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Ambient temperature Ta (°C)
Collector dark current ID (ICEO) (μA)
ID – Ta
105
0
101
100
101
102
103
20 40 60 80 100 120
104
5 V
VCE = 24 V
10 V
Load resistance RL (k)
Switching time (μs)
Switching Time – RL
3
3000
1000
500
300
100
50
30
10
5.
1
3 5 10 30 50 100
Ta = 25 °C
IF = 1.6 mA
VCC = 5 V
tOFF
ts
tON
TLP626,TLP626-2,TLP626-4
2007-10-01
8
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA A SSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
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Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIB A (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCUR ACY OF INFORMATION, OR NONINFRINGEMENT.
GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.