PACKAGE
11/18/03
Page 1 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
H11AA814 SCHEMATIC
H11A617 & H11A817 SCHEMATIC
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
• Minimum BV
CEO
of 70V guaranteed
APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
4
1
1
2
4
3 EMITTER
COLLECTOR
1
2
4
3 EMITTER
COLLECTORANODE
CATHODE
11/18/03
Page 2 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
*Typical values at T
A
= 25°C.
Parameter Symbol Device Value Units
TOTAL DEVICE
Storage Temperature T
STG
All -55 to +150 °C
Operating Temperature T
OPR
All -55 to +100 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
Total Device Power Dissipation (-55°C to 50 °C) P
D
All 200 mW
EMITTER
Continuous Forward Current I
F
All 50 mA
Re verse Voltage V
R
H11A617A/B/C/D
H11A817/A/B/C/D 6
5V
Forward Current - Peak (1 µs pulse, 300 pps) I
F
(pk) All 1.0 A
LED Power Dissipation (25°C ambient)
Derate above 25°CP
D
All 100 mW
1.33 mW/°C
DETECTOR
Collector-Emitter Voltage V
CEO
All 70 V
Emitter-Collector Voltage V
ECO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7
6V
Continuous Collector Current I
C
All 50 mA
Detector Power Dissipation (25°C ambient)
Derate above 25°CP
D
All 150 mW
2.0 mW/°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ* Max Unit
EMITTER
(I
F
= 60 mA) V
F
H11A617A/B/C/D 1.35 1.65 V
Input Forward Voltage (I
F
= 20 mA) H11A817/A/B/C/D 1.2 1.5
(I
F
= ±20 mA) H11AA814/A 1.2 1.5
Reverse Leakage Current (V
R
= 6.0 V) I
R
H11A617A/B/C/D .001 10 µA
(V
R
= 5.0 V) H11A817/A/B/C/D
DETECTOR
Collector-Emitter Breakdown
Voltage (I
C
= 1.0 mA, I
F
= 0) BV
CEO
ALL 70 100 V
Emitter-Collector Breakdown
Voltage (I
E
= 100 µA, I
F
= 0) BV
ECO
H11AA814/A 6 10 VH11A617A/B/C/D 7
H11A817/A/B/C/D 6
Collector-Emitter Dark Current (V
CE
= 10V, I
F
= 0) I
CEO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D 1100 nA
H11A617A/B 50
Collector-Emitter Capacitance (V
CE
= 0 V, f = 1 MHz) C
CE
ALL 8 pF
11/18/03
Page 3 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
*Typical values at T
A
= 25°C.
NOTES
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
Current Transfer
Ratio
(I
F
= ±1 mA, V
CE
= 5 V) (note 1)
CTR
H11AA814 20 300 %
(I
F
= ±1 mA, V
CE
= 5 V) (note 1) H11AA814A 50 150 %
(I
F
= 10 mA, V
CE
= 5 V) (note 1)
H11A617A 40 80 %
H11A617B 63 125 %
H11A617C 100 200 %
H11A617D 160 320 %
(I
F
= 5 mA, V
CE
= 5 V) (note 1)
H11A817 50 600 %
H11A817A 80 160 %
H11A817B 130 260 %
H11A817C 200 400 %
H11A817D 300 600 %
(I
F
= 1 mA, V
CE
= 5 V) (note 1)
H11A617A 13 %
H11A617B 22 %
H11A617C 34 %
H11A617D 56 %
Collector-Emitter
Saturation Voltage
(I
C
= 1 mA, I
F
= ±20 mA)
(I
C
= 2.5 mA, I
F
= 10 mA)
(I
C
= 1 mA, I
F
= 20 mA) V
CE (SAT)
H11AA814/A 0.2 VH11A617A/B/C/D 0.4
H11A817/A/B/C/D 0.2
AC Characteristic
Rise Time (I
C
= 2 mA, V
CE
= 2 V, R
L
= 100
Ω
) (note 2) t
r
ALL 2.4 18 µs
F all Time (I
C
= 2 mA, V
CE
= 2 V, R
L
= 100
Ω
) (note 2) t
f
ALL 2.4 18 µs
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min V
ISO
5300 Vac(rms)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
Ω
Isolation Capacitance (V
I-O
= 0, f = 1 MHz) C
ISO
0.5 pf
11/18/03
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© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
5
-50 -25 0
00.1 0.2 0.5
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.0 2.0 5 10 20 50 100
.02
.04
.06
.08
.1
.12
.14
25 50 75 100 125
10 15 20 25
IF - FORWARD CURRENT (mA)
CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C
VCE (SAT) - COLLECTOR-EMITTER
SATURATION V OLTAGE (V)
VF - FORWARD VOLTAGE (V)
NORMALIZED CTR
CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C
NORMALIZED CTR
30 -50
0.4
0.6
0.8
1
1.2
-25 0 +25 +50 +75
TA - AMBIENT TEMPERATURE (˚C)
TA - AMBIENT TEMPERATURE (˚C) IF - FORWARD CURRENT (mA)
+100
Fig. 1 Normalized CTR vs. Forward Current
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 2 Normalized CTR vs. Ambient Temperature
Fig. 4 Forward Voltage vs. Forward Current
I
F
= 20 mA
I
C
= 1 mA
I
F
= 10 mA
I
F
= 5 mA
T = -55˚C
T = 25˚C
T = 100˚C
0
0
5
10
15
20
25
12345678910
VCE - COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5 Collector Current
vs. Collector-Emitter Voltage
I
F
= 5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 20 mA
IC - COLLECTOR CURRENT (mA)
11/18/03
Page 5 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
0
10-6
10-5
10-4
10-3
10-2
10-1
1
10
25 50 75 100 125
ICEO - COLLECTOR-EMITTER CURRENT (µA)
TA - AMBIENT TEMPERATURE (˚C)
Fig. 6 Collector Leakage Current
vs. Ambient Temperature
VCE = 10 V
0.1
0.1
1
10
100
1000
1 10 100
R - LOAD RESISTOR (KV)
Fig. 7 Rise and Fall Time
vs. Load Resistor
toff
ton
tf
Tr/ Tf- RISE AND FALL TIME (µs)
tr
IF = 5 mA
VCC = 5 V
TA = 25˚C
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IF RL = 100Ω
VCC = 10V
OUTPUT
Temperature (°C)
250
200
150
100
50
0012345
Time (Min)
220°C: 10 sec to 40 sec
Time > 183°C: 120 sec to 180 sec
225°C
10%
90%
Figure 8. Switching Time Test Circuit and Waveforms
Recommended Thermal Reflow Profile for Surface Mount DIP Package
IC
Adjust IF to produce IC = 2 mA
11/18/03
Page 6 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
NOTE
All dimensions are in inches (millimeters)
Package Dimensions (Through Hole) Package Dimensions (Surface Mount)
Footprint Dimensions (Surface Mount)
SEATING PLANE
0.190 (4.83)
0.175 (4.45)
0.200 (5.08)
0.115 (2.92)
0.100 (2.54)
TYP
0.154 (3.90)
0.120 (3.05)
0.270 (6.86)
0.250 (6.35)
0.270 (6.86)
0.250 (6.35)
0.020 (0.51)
MIN
0.300 (7.62)
typ
15°
0.016 (0.40)
0.008 (0.20)
SEATING PLANE
0.190 (4.83)
0.175 (4.45)
0.200 (5.08)
0.115 (2.92)
0.020 (0.51)
MIN
0.070 (1.78)
0.045 (1.14)
0.100 (2.54)
TYP
0.022 (0.56)
0.016 (0.41)
0.405 (10.30)
MAX
0.315 (8.00)
MIN
0.300 (7.62)
TYP
0.016 (0.40)
0.008 (0.20)
0.270 (6.86)
0.250 (6.35)
Lead Coplanarity 0.004 (0.10) MAX
0.070 (1.78)
0.060 (1.52)
0.030 (0.76)
0.295 (7.49)
0.415 (10.54)
0.100 (2.54)
SEATING PLANE
0.400 (10.16)
TYP
0 to 15°
0.270 (6.86)
0.250 (6.35)
0.190 (4.83)
0.175 (4.45)
0.100 (2.54)
TYP
0.154 (3.90)
0.120 (3.05) 0.004 (0.10)
MIN
0.200 (5.08)
0.115 (2.92)
0.270 (6.86)
0.250 (6.35)
0.016 (0.40)
0.008 (0.20)
Package Dimensions (0.4” Lead Spacing)
11/18/03
Page 7 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
ORDERING INFORMATION
MARKING INFORMATION
Option Order Entry Identifier Description
S .S Surface Mount Lead Bend
SD .SD Surface Mount; Tape and reel
W .W 0.4" Lead Spacing
300 .300 VDE 0884
300W .300W VDE 0884, 0.4" Lead Spacing
3S .3S VDE 0884, Surface Mount
3SD .3SD VDE 0884, Surface Mount, Tape & Reel
1
2
6
4
3
5
Definitions
1 Fairchild logo
2 Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
814
XVT
YY
11/18/03
Page 8 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
NOTE
All dimensions are in millimeters
Carrier T ape Specifications
4.0 ± 0.1
Ø1.55 ± 0.05
User Direction of Feed
4.0 ± 0.1
1.75 ± 0.10
7.5 ± 0.1
16.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
13.2 ± 0.2
5.00 ± 0.20
0.1 MAX 10.30 ± 0.20 Ø1.6 ± 0.1
4.95 ± 0.20
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
11/18/03
Page 9 of 9
© 2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
