1
LTC3704
3704fb
FEATURES
DESCRIPTIO
U
APPLICATIO S
U
TYPICAL APPLICATIO
U
Wide Input Range, No R
SENSE
TM
Positive-to-Negative DC/DC Controller
The LTC
®
3704 is a wide input range, current mode,
positive-to-negative DC/DC controller that drives an
N-channel power MOSFET and requires very few external
components. Intended for low to high power applications,
it eliminates the need for a current sense resistor by
utilizing the power MOSFET’s on-resistance, thereby maxi-
mizing efficiency.
The IC’s operating frequency can be set with an external
resistor over a 50kHz to 1MHz range, and can be synchro-
nized to an external clock using the MODE/SYNC pin.
Burst Mode operation at light loads, a low minimum
operating supply voltage of 2.5V and a low shutdown
quiescent current of 10μA make the LTC3704 ideally
suited for battery-operated systems.
For applications requiring constant frequency operation,
the Burst Mode operation feature can be defeated using
the MODE/SYNC pin. Higher than 36V switch voltage
applications are possible with the LTC3704 by connecting
the SENSE pin to a resistor in the source of the power
MOSFET.
The LTC3704 is available in the 10-lead MSOP package.
High Efficiency Operation (No Sense
Resistor Required)
Wide Input Voltage Range: 2.5V to 36V
Current Mode Control Provides Excellent Transient
Response
High Maximum Duty Cycle (Typ 92%)
±1% Internal Voltage Reference
±2% RUN Pin Threshold with 100mV Hysteresis
Micropower Shutdown: I
Q
= 10μA
Programmable Switching Frequency
(50kHz to 1MHz) with One External Resistor
Synchronizable to an External Clock Up to 1.3 × f
OSC
User-Controlled Pulse Skip or Burst Mode
®
Operation
Internal 5.2V Low Dropout Voltage Regulator
Capable of Operating with a Sense Resistor for High
Output Voltage Applications (V
DS
>36V)
Small 10-Lead MSOP Package
SLIC Power Supplies
Telecom Power Supplies
Portable Electronic Equipment
Cable and DSL Modems
Router Supplies
RUN
I
TH
NFB
FREQ
MODE/SYNC
SENSE
V
IN
INTV
CC
GATE
GND
LTC3704
R
T
80.6k
1%
R1
1M
C
VCC
4.7μF
M1
C
IN
, C
DC
: TDK C5750X5R1C476M
C
OUT
: TDK C5750X5R0J107M
C
VCC
: TAIYO YUDEN LMK316BJ475ML
D1
L1*
L2*
C
OUT
100μF
(X2)
V
IN
5V to 15V
V
OUT
–5.0V
3A to 5A
GND
D1: MBRD835L (ON SEMICONDUCTOR)
L1, L2: BH ELECTRONICS BH510-1009
M1: Si4884 (SILICONIX/VISHAY)
R
C
3k
C
C1
4.7nF C
IN
47μF
C
DC
47μF
3704 TA01
R
FB1
1.21k
1%
R
FB2
3.65k
1%
Conversion Efficiency
OUTPUT CURRENT (A)
0.001
EFFICIENCY (%)
0.1 10
100
90
80
70
60
50
40
30
20
3704 TA01b
0.01 1.0
V
IN
= 15V
V
IN
= 5V
V
IN
= 10V
Figure 1. High Efficiency Positive to Negative Supply
, LTC, LT and LTM are registered trademarks of Linear Technology Corporation. Burst
Mode is a registered trademark of Linear Technology Corporation. No R
SENSE
is a
registered trademark of Linear Technology Corporation. All other trademarks are the
property of their respective owners. Protected by U.S. Patents including 5847554, 5731694.
2
LTC3704
3704fb
(Note 1)
V
IN
Voltage ...............................................0.3V to 36V
INTV
CC
Voltage ...........................................0.3V to 7V
INTV
CC
Output Current ........................................ 50mA
GATE Voltage ...........................0.3V to V
INTVCC
+ 0.3V
I
TH
Voltage ...............................................0.3V to 2.7V
NFB Voltage .............................................. –2.7V to 2.7V
RUN, MODE/SYNC Voltages .......................0.3V to 7V
FREQ Voltage ............................................0.3V to 1.5V
SENSE Pin Voltage ................................... 0.3V to 36V
Operating Temperature Range (Note 2) .. 40°C to 85°C
LTC3704E ............................................ –40°C to 85°C
LTC3704I........................................... –40°C to 125°C
Junction Temperature (Note 3)............................ 125°C
Storage Temperature Range ................. 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
LTC3704EMS
LTC3704IMS
ABSOLUTE AXI U RATI GS
WWWU
PACKAGE/ORDER I FOR ATIO
UU
W
ELECTRICAL CHARACTERISTICS
MS PART MARKING
LTYT
LTCFW
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VIN = VINTVCC = 5V, VRUN = 1.5V, RT = 80k, VMODE/SYNC = 0V, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Main Control Loop
V
IN(MIN)
Minimum Input Voltage 2.5 V
I
Q
Input Voltage Supply Current (V
INTVCC
= Open, No Switching) (Note 4)
Continuous Mode V
MODE/SYNC
= 5V, V
ITH
= 0.75V 550 1000 μA
Burst Mode Operation, No Load V
MODE/SYNC
= 0V, V
ITH
= 0V (Note 5) 250 500 μA
Shutdown Mode V
RUN
= 0V 10 20 μA
V
RUN+
Rising RUN Input Threshold Voltage V
INTVCC
= Open 1.348 V
V
RUN
Falling RUN Input Threshold Voltage V
INTVCC
= Open 1.223 1.248 1.273 V
1.198 1.298 V
V
RUN(HYST)
RUN Pin Input Threshold Hysteresis 50 100 150 mV
I
RUN
RUN Input Current 1 100 nA
V
NFB
Negative Feedback Voltage V
ITH
= 0.4V (Note 5) –1.218 –1.230 –1.242 V
V
ITH
= 0.4V (Note 5) –1.212 –1.248 V
V
ITH
= 0.4V (I-Grade) (Notes 2 and 5) –1.205 –1.255 V
I
NFB
NFB Pin Input Current 7.5 15 μA
ΔV
NFB
Line Regulation 2.5V V
IN
30V 0.002 0.02 %/V
ΔV
IN
ΔV
NFB
Load Regulation V
MODE/SYNC
= 0V, V
ITH
= 0.5V to 0.90V (Note 5) –1 –0.1 %
ΔV
ITH
g
m
Error Amplifier Transconductance I
TH
Pin Load = ±5μA (Note 5) 650 μmho
V
ITH(BURST)
Burst Mode Operation I
TH
Pin Voltage Falling I
TH
Voltage 0.17 V
V
SENSE(MAX)
Maximum Current Sense Input Threshold Duty Cycle < 20% 120 150 180 mV
I
SENSE(ON)
SENSE Pin Current (GATE High) V
SENSE
= 0V 40 75 μA
I
SENSE(OFF)
SENSE Pin Current (GATE Low) V
SENSE
= 30V 0.1 5 μA
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
T
JMAX
= 125°C, θ
JA
= 120°C/ W
1
2
3
4
5
RUN
I
TH
NFB
FREQ
MODE/
SYNC
10
9
8
7
6
SENSE
V
IN
INTV
CC
GATE
GND
TOP VIEW
MS PACKAGE
10-LEAD PLASTIC MSOP
3
LTC3704
3704fb
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliabilty and lifetime.
Note 2: The LTC3704E is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. The LTC3704I is guaranteed over the full
–40°C to 125°C operating temperature range.
Note 3: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formula:
T
J
= T
A
+ (P
D
• 120°C/W)
Note 4: The dynamic input supply current is higher due to power MOSFET
gate charging (Q
G
• f
OSC
). See Applications Information.
Note 5: The LTC3704 is tested in a feedback loop that servos V
NFB
to the
reference voltage with the I
TH
pin forced to a voltage between 0V and 1.4V
(the no load to full load operating voltage range for the I
TH
pin is 0.3V to
1.23V).
Note 6: In a synchronized application, the internal slope compensation
gain is increased by 25%. Synchronizing to a significantly higher ratio will
reduce the effective amount of slope compensation, which could result in
subharmonic oscillation for duty cycles greater than 50%.
Note 7: Rise and fall times are measured at 10% and 90% levels.
The denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VIN = VINTVCC = 5V, VRUN = 1.5V, RFREQ = 80k, VMODE/SYNC = 0V, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Oscillator
f
OSC
Oscillator Frequency R
FREQ
= 80k 250 300 350 kHz
Oscillator Frequency Range 50 1000 kHz
D
MAX
Maximum Duty Cycle 87 92 97 %
f
SYNC/
f
OSC
Recommended Maximum Synchronized f
OSC
= 300kHz (Note 6) 1.25 1.30
Frequency Ratio
t
SYNC(MIN)
MODE/SYNC Minimum Input Pulse Width V
SYNC
= 0V to 5V 25 ns
t
SYNC(MAX)
MODE/SYNC Maximum Input Pulse Width V
SYNC
= 0V to 5V 0.8/f
OSC
ns
V
IL(MODE)
Low Level MODE/SYNC Input Voltage 0.3 V
V
IH(MODE)
High Level MODE/SYNC Input Voltage 1.2 V
R
MODE/SYNC
MODE/SYNC Input Pull-Down Resistance 50 kΩ
V
FREQ
Nominal FREQ Pin Voltage 0.62 V
Low Dropout Regulator
V
INTVCC
INTV
CC
Regulator Output Voltage V
IN
= 7.5V 5.0 5.2 5.4 V
ΔV
INTVCC
INTV
CC
Regulator Line Regulation 7.5V V
IN
15V 8 25 mV
ΔV
IN1
ΔV
INTVCC
INTV
CC
Regulator Line Regulation 15V V
IN
30V 70 200 mV
ΔV
IN2
V
LDO(LOAD)
INTV
CC
Load Regulation V
IN
= 7.5V, 0 I
INTVCC
20mA 2 0.2 %
V
DROPOUT
INTV
CC
Regulator Dropout Voltage V
INTVCC
= Open, INTV
CC
Load = 20mA 280 mV
I
INTVCC
Bootstrap Mode INTV
CC
Supply RUN = 0V, SENSE = 5V 10 20 μA
Current in Shutdown
GATE Driver
t
r
GATE Driver Output Rise Time C
L
= 3300pF (Note 7) 17 100 ns
t
f
GATE Driver Output Fall Time C
L
= 3300pF (Note 7) 8 100 ns
4
LTC3704
3704fb
NFB Voltage vs Temp NFB Voltage Line Regulation NFB Pin Current vs Temperature
TEMPERATURE (°C)
–50
NFB VOLTAGE (V)
1.23
1.24
150
3704 G01
1.22
1.21 050 100
–25 25 75 125
1.25
V
IN
(V)
0
1.229
NFB VOLTAGE (V)
1.230
1.231
5101520
3704 G02
25 30 35
Shutdown Mode IQ vs VIN Burst Mode IQ vs VIN
VIN (V)
0
0
SHUTDOWN MODE IQ (μA)
10
20
10 20 30 40
3704 G04
30
Shutdown Mode IQ vs Temperature
TEMPERATURE (°C)
–50
0
SHUTDOWN MODE I
Q
(μA)
5
10
15
20
25 0 25 50
3704 G05
75 100 125 150
V
IN
= 5V
VIN (V)
0
0
Burst Mode IQ (μA)
100
200
300
400
600
10 20
3704 G06
30 40
500
Burst Mode IQ vs Temperature
Gate Drive Rise and Fall Time
vs CL
Dynamic IQ vs Frequency
TEMPERATURE (°C)
–50
0
Burst Mode I
Q
(μA)
200
500
050 75
3704 G07
100
400
300
–25 25 100 125 150
FREQUENCY (kHz)
0
0
IQ (mA)
2
6
8
10
800
18
3704 G08
4
400 1200
600
200 1000
12
14
16
CL = 3300pF
IQ(TOT) = 550μA + Qg • f
CL (pF)
0
0
TIME (ns)
10
20
30
40
60
2000 4000 6000 8000
3704 G09
10000 12000
50
RISE TIME
FALL TIME
TYPICAL PERFOR A CE CHARACTERISTICS
UW
TEMPERATURE (°C)
–50
NFB CURRENT (μA)
8.0
7.9
7.8
7.7
7.6
7.5
7.4
7.3
7.2
7.1
7.0 –25 250 50 10075
3704 G03
125 150
5
LTC3704
3704fb
RUN Thresholds vs VIN RT vs Frequency
Frequency vs Temperature SENSE Pin Current vs Temperature
Maximum Sense Threshold
vs Temperature
INTVCC Load Regulation
INTVCC Dropout Voltage
vs Current, Temperature
INTVCC Line Regulation
V
IN
(V)
0
1.2
RUN THRESHOLDS (V)
1.3
1.4
10 20 30 40
3704 G10
1.5
RUN Thresholds vs Temperature
TEMPERATURE (°C)
–50
RUN THRESHOLDS (V)
1.30
1.35
150
3704 G11
1.25
1.20 050 100
–25 25 75 125
1.40
FREQUENCY (kHz)
100
R
T
(kΩ)
300
1000
3704 G12
10
100
200 1000
900
800700600
500
400
0
TEMPERATURE (°C)
–50
275
GATE FREQUENCY (kHz)
280
290
295
300
325
310
050 75
3704 G13
285
315
320
305
–25 25 100 125 150
TEMPERATURE (°C)
–50
140
MAX SENSE THRESHOLD (mV)
145
150
155
160
25 0 25 50
3704 G14
75 100 125 150
TEMPERATURE (°C)
–50
35
SENSE PIN CURRENT (μA)
40
45
050 75
3704 G15
–25 25 100 125 150
GATE HIGH
V
SENSE
= 0V
INTV
CC
LOAD (mA)
0
INTV
CC
VOLTAGE (V)
5.2
30 50 80
3704 G16
5.1
5.0
10 20 40 60 70
T
A
= 25°C
V
IN
(V)
0
5.1
INTV
CC
VOLTAGE (V)
5.2
5.3
10 20 30 40
3704 G17
5.4
51525 35
T
A
= 25°C
INTVCC LOAD (mA)
0
0
DROPOUT VOLTAGE (mV)
50
150
200
250
500
350
510
3704 G18
100
400
450
300
15 20
150°C
75°C
125°C
25°C
–50°C
0°C
TYPICAL PERFOR A CE CHARACTERISTICS
UW
6
LTC3704
3704fb
UU
U
PI FU CTIO S
RUN (Pin 1): The RUN pin provides the user with an
accurate means for sensing the input voltage and pro-
gramming the start-up threshold for the converter. The
falling RUN pin threshold is nominally 1.248V and the
comparator has 100mV of hysteresis for noise immunity.
When the RUN pin is below this input threshold, the IC is
shut down and the V
IN
supply current is kept to a low
value (typ 10μA). The Absolute Maximum Rating for the
voltage on this pin is 7V.
I
TH
(Pin 2): Error Amplifier Compensation Pin. The cur-
rent comparator input threshold increases with this
control voltage. Nominal voltage range for this pin is 0V
to 1.40V.
NFB (Pin 3): Receives the feedback voltage from the
external resistor divider across the output. Nominal
voltage for this pin in regulation is –1.230V.
FREQ (Pin 4): A resistor from the FREQ pin to ground
programs the operating frequency of the chip. The nomi-
nal voltage at the FREQ pin is 0.62V.
MODE/SYNC (Pin 5): This input controls the operating
mode of the converter and allows for synchronizing the
operating frequency to an external clock. If the MODE/
SYNC pin is connected to ground, Burst Mode operation
is enabled. If the MODE/SYNC pin is connected to INTV
CC
,
or if an external logic-level synchronization signal is
applied to this input, Burst Mode operation is disabled
and the IC operates in a continuous mode.
GND (Pin 6): Ground Pin.
GATE (Pin 7): Gate Driver Output.
I
NTV
CC
(Pin 8): The Internal 5.20V Regulator Output. The
gate driver and control circuits are powered from this
voltage. Decouple this pin locally to the IC ground with a
minimum of 4.7μF low ESR tantalum or ceramic
capacitor.
V
IN
(Pin 9): Main Supply Pin. Must be closely decoupled
to ground.
SENSE (Pin 10): The Current Sense Input for the Control
Loop. Connect this pin to the drain of the power MOSFET
for V
DS
sensing and highest efficiency. Alternatively, the
SENSE pin may be connected to a resistor in the source
of the power MOSFET. Internal leading edge blanking is
provided for both sensing methods.
7
LTC3704
3704fb
BLOCK DIAGRA
W
+
+
50k
EA
UV
TO
START-UP
CONTROL
BURST
COMPARATOR
S
R
Q
LOGIC
PWM LATCH
CURRENT
COMPARATOR
0.30V
1.230V
5.2V
+
2.00V
1.230V
SLOPE
1.230V
ILOOP
NFB
ITH
+
gm
3
MODE/SYNC
5
FREQ
4
2
INTVCC
8LDO
V-TO-I
OSCV-TO-I
SLOPE
COMPENSATION
BIAS AND
START-UP
CONTROL
VIN
BIAS VREF
IOSC
RLOOP
+
+
C1
SENSE
10
GND
3704 BD
6
GATE
INTVCC
GND
7
VIN
1.248V
9
RUN
1
0.62V
100mV
HYSTERESIS
(1.348V RISING)
BUFFER
200k 200k
C2
8
LTC3704
3704fb
Main Control Loop
The LTC3704 is a constant frequency, current mode
controller for DC/DC positive-to-negative converter appli-
cations. The LTC3704 is distinguished from conventional
current mode controllers because the current control loop
can be closed by sensing the voltage drop across the
power MOSFET switch instead of across a discrete sense
resistor, as shown in Figure 2. This sensing technique
improves efficiency, increases power density, and re-
duces the cost of the overall solution.
OPERATIO
U
The nominal operating frequency of the LTC3704 is pro-
grammed using a resistor from the FREQ pin to ground
and can be controlled over a 50kHz to 1000kHz range. In
addition, the internal oscillator can be synchronized to an
external clock applied to the MODE/SYNC pin and can be
locked to a frequency between 100% and 130% of its
nominal value. When the MODE/SYNC pin is left open, it is
pulled low by an internal 50k resistor and Burst Mode
operation is enabled. If this pin is taken above 2V or an
external clock is applied, Burst Mode operation is disabled
and the IC operates in continuous mode. With no load (or
an extremely light load), the controller will skip pulses in
order to maintain regulation and prevent excessive output
ripple.
The RUN pin controls whether the IC is enabled or is in a
low current shutdown state. A micropower 1.248V refer-
ence and comparator C2 allow the user to program the
supply voltage at which the IC turns on and off (compara-
tor C2 has 100mV of hysteresis for noise immunity). With
the RUN pin below 1.248V, the chip is off and the input
supply current is typically only 10μA.
The LTC3704 can be used either by sensing the voltage
drop across the power MOSFET or by connecting the
SENSE pin to a conventional shunt resistor in the source
of the power MOSFET, as shown in Figure 2. Sensing the
voltage across the power MOSFET maximizes converter
efficiency and minimizes the component count, but limits
the output voltage to the maximum rating for this pin
(36V). By connecting the SENSE pin to a resistor in the
source of the power MOSFET, the user is able to program
output voltages significantly greater than the 36V maxi-
mum input voltage rating for the IC.
Programming the Operating Mode
For applications where maximizing the efficiency at very
light loads (e.g., <100μA) is a high priority, Burst Mode
operation should be applied (i.e., the MODE/SYNC pin
should be connected to ground). In applications where
fixed frequency operation is more critical than low cur-
rent efficiency, or where the lowest output ripple is
desired, pulse-skip mode operation should be used and
the MODE/SYNC pin should be connected to the INTV
CC
pin. This allows discontinuous conduction mode (DCM)
operation down to near the limit defined by the chip’s
2a. SENSE Pin Connection for
Maximum Efficiency (V
SW
< 36V)
V
SW
V
IN
GND
R
SENSE
3704 F02
2b. SENSE Pin Connection for Precise
Control of Peak I
IN
/I
OUT
or for V
SW
> 36V
V
SW
V
IN
GND
GATE
GND
V
IN
SENSE
GATE
GND
V
IN
SENSE
Figure 2. Using the SENSE Pin On the LTC3704
For circuit operation, please refer to the Block Diagram of
the IC and Figure 1. In normal operation, the power
MOSFET is turned on when the oscillator sets the PWM
latch and is turned off when the current comparator C1
resets the latch. The divided-down output voltage is com-
pared to an internal 1.230V reference by the error amplifier
EA, which outputs an error signal at the I
TH
pin. The voltage
on the I
TH
pin sets the current comparator C1 input
threshold. When the load current increases, a fall in the
NFB voltage relative to the reference voltage causes the I
TH
pin to rise, which causes the current comparator C1 to trip
at a higher peak inductor current value. The average
inductor current will therefore rise until it equals the load
current, thereby maintaining output regulation.
9
LTC3704
3704fb
OPERATIO
U
minimum on-time (about 175ns). Below this output
current level, the converter will begin to skip cycles in
order to maintain output regulation. Figures 3 and 4 show
the light load switching waveforms for Burst Mode and
Pulse-Skip Mode operation for the converter in Figure 1.
Burst Mode Operation
Burst Mode operation is selected by leaving the MODE/
SYNC pin unconnected or by connecting it to ground. In
normal operation, the range on the I
TH
pin corresponding
to no load to full load is 0.30V to 1.2V. In Burst Mode
operation, if the error amplifier EA drives the I
TH
voltage
below 0.525V, the buffered I
TH
input to the current com-
parator C1 will be clamped at 0.525V (which corresponds
to 25% of maximum load current). The inductor current
peak is then held at approximately 30mV divided by the
power MOSFET R
DS(ON)
. If the I
TH
pin drops below 0.30V,
the Burst Mode comparator B1 will turn off the power
MOSFET and scale back the quiescent current of the IC to
250μA (sleep mode). In this condition, the load current will
be supplied by the output capacitor until the I
TH
voltage
rises above the 50mV hysteresis of the burst comparator.
At light loads, short bursts of switching (where the aver-
age inductor current is 25% of its maximum value) fol-
lowed by long periods of sleep will be observed, thereby
greatly improving converter efficiency. Oscilloscope wave-
forms illustrating Burst Mode operation are shown in
Figure 3.
buffered I
TH
burst clamp is removed, allowing the I
TH
pin
to directly control the current comparator from no load to
full load. With no load, the I
TH
pin is driven below 0.30V,
the power MOSFET is turned off and sleep mode is
invoked. Oscilloscope waveforms illustrating this mode of
operation are shown in Figure 4.
10μs/DIV 3704 F03
Figure 3. LTC3704 Burst Mode Operation
(MODE/SYNC = 0V) at Low Output Current
Figure 4. LTC3704 Low Output Current Operation with Burst
Mode Operation Disabled (MODE/SYNC = INTVCC)
V
OUT
50mV/DIV
I
L
5A/DIV
MODE/SYNC = 0V
(Burst Mode OPERATION)
V
OUT
50mV/DIV
I
L
5A/DIV
MODE/SYNC = INTV
CC
(PULSE-SKIP MODE)
2μs/DIV 3704 F04
When an external clock signal drives the MODE/SYNC pin
at a rate faster than the chip’s internal oscillator, the
oscillator will synchronize to it. In this synchronized mode,
Burst Mode operation is disabled. The constant frequency
associated with synchronized operation provides a more
controlled noise spectrum from the converter, at the
expense of overall system efficiency of light loads.
When the oscillator’s internal logic circuitry detects a
synchronizing signal on the MODE/SYNC pin, the internal
oscillator ramp is terminated early and the slope compen-
sation is increased by approximately 30%. As a result, in
applications requiring synchronization, it is recommended
that the nominal operating frequency of the IC be pro-
grammed to be about 75% of the external clock frequency.
Attempting to synchronize to too high an external fre-
quency (above 1.3f
O
) can result in inadequate slope com-
pensation and possible subharmonic oscillation (or jitter).
The external clock signal must exceed 2V for at least 25ns,
and should have a maximum duty cycle of 80%, as shown
in Figure 5. The MOSFET turn on will synchronize to the
rising edge of the external clock signal.
Pulse-Skip Mode Operation
With the MODE/SYNC pin tied to a DC voltage above 1.2V,
Burst Mode operation is disabled. The internal, 0.525V
10
LTC3704
3704fb
APPLICATIO S I FOR ATIO
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INTV
CC
Regulator Bypassing and Operation
An internal, P-channel low dropout voltage regulator pro-
duces the 5.2V supply which powers the gate driver and
logic circuitry within the LTC3704, as shown in Figure 7.
The INTV
CC
regulator can supply up to 50mA and must be
bypassed to ground immediately adjacent to the IC pins
with a minimum of 4.7μF tantalum or ceramic capacitor.
Good bypassing is necessary to supply the high transient
currents required by the MOSFET gate driver.
Figure 6. Timing Resistor (RT) Value
Figure 5. MODE/SYNC Clock Input and Switching
Waveforms for Synchronized Operation
3404 F05
2V TO 7V
MODE/
SYNC
GATE
I
SW
t
MIN
= 25ns
0.8T
D = 40%
T T = 1/f
O
Programming the Operating Frequency
The choice of operating frequency and inductor value is a
tradeoff between efficiency and component size. Low
frequency operation improves efficiency by reducing
MOSFET and diode switching losses. However, lower
frequency operation requires more inductance for a given
amount of load current.
The LTC3704 uses a constant frequency architecture that
can be programmed over a 50kHz to 1000kHz range with
a single external resistor from the FREQ pin to ground, as
shown in Figure 1. The nominal voltage on the FREQ pin is
0.6V, and the current that flows into the FREQ pin is used
to charge and discharge an internal oscillator capacitor. A
graph for selecting the value of R
T
for a given operating
frequency is shown in Figure 6.
FREQUENCY (kHz)
100
R
T
(kΩ)
300
1000
3704 F06
10
100
200 1000
900
800700600
500
400
0
Figure 7. Bypassing the LDO Regulator and Gate Driver Supply
+
+
1.230V
R2
R1
P-CH
5.2V
DRIVER GATE
C
VCC
4.7μF
C
IN
INPUT
SUPPLY
2.5V TO
30V
GND
PLACE AS CLOSE AS
POSSIBLE TO DEVICE PINS
M1
3704 F07
INTV
CC
V
IN
GND
LOGIC
For input voltages that don’t exceed 7V (the absolute
maximum rating for this pin), the internal low dropout
regulator in the LTC3704 is redundant and the INTV
CC
pin
can be shorted directly to the V
IN
pin. With the INTV
CC
pin
shorted to V
IN
, however, the divider that programs the
regulated INTV
CC
voltage will draw 10μA of current from
the input supply, even in shutdown mode. For applications
that require the lowest shutdown mode input supply
current, do not connect the INTV
CC
pin to V
IN
. Regardless
of whether the INTV
CC
pin is shorted to V
IN
or not, it is
always necessary to have the driver circuitry bypassed
with a 4.7μF tantalum or low ESR ceramic capacitor to
ground immediately adjacent to the INTV
CC
and GND
pins.
In an actual application, most of the IC supply current is
used to drive the gate capacitance of the power MOSFET.
As a result, high input voltage applications in which a large
power MOSFET is being driven at high frequencies can
11
LTC3704
3704fb
APPLICATIO S I FOR ATIO
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cause the LTC3704 to exceed its maximum junction
temperature rating. The junction temperature can be
estimated using the following equations:
I
Q(TOT)
I
Q
+ f • Q
G
P
IC
= V
IN
• (I
Q
+ f • Q
G
)
T
J
= T
A
+ P
IC
• R
TH(JA)
The total quiescent current I
Q(TOT)
consists of the static
supply current (I
Q
) and the current required to charge and
discharge the gate of the power MOSFET. The 10-pin
MSOP package has a thermal resistance of R
TH(JA)
=
120°C/W.
As an example, consider a power supply with V
IN
= 5V and
V
SW(MAX)
= 12V. The switching frequency is 500kHz, and
the maximum ambient temperature is 70°C. The power
MOSFET chosen is the IRF7805, which has a maximum
R
DS(ON)
of 11mΩ (at room temperature) and a maximum
total gate charge of 37nC (the temperature coefficient of
the gate charge is low).
I
Q(TOT)
= 600μA + 37nC • 500kHz = 19.1mA
P
IC
= 5V • 19.1mA = 95mW
T
J
= 70°C + 120°C/W • 95mW = 81.4°C
This demonstrates how significant the gate charge current
can be when compared to the static quiescent current in
the IC.
To prevent the maximum junction temperature from being
exceeded, the input supply current must be checked when
operating in a continuous mode at high V
IN
. A tradeoff
between the operating frequency and the size of the power
MOSFET may need to be made in order to maintain a
reliable IC junction temperature. Prior to lowering the
operating frequency, however, be sure to check with
power MOSFET manufacturers for their latest-and-great-
est low Q
G
, low R
DS(ON)
devices. Power MOSFET manu-
facturing technologies are continually improving, with
newer and better performance devices being introduced
almost yearly.
Output Voltage Programming
The output voltage is set by a resistor divider according to
the following formula:
VV R
RIR
O REF NFB
=+
+••12
12
where V
REF
= –1.230V, and I
NFB
is the current which flows
out of the NFB pin (I
NFB
= –7.5μA). In order to properly
dimension R2, including the effect of the NFB pin current,
the following formula can be used:
RVV
V
RI
OUT REF
REF NFB
2
1
=
+
The nominal 7.5μA current which flows out of the NFB pin
has a production tolerance of approximately ±2.5μA, so an
output divider current of 500μA (R1 = 2.49k) results in a
0.5% uncertainty in the output voltage. For low power
applications where the output voltage tolerance is less
important, efficiency can be increased by increasing the
value of R1.
Programming Turn-On and Turn-Off Thresholds
with the RUN Pin
The LTC3704 contains an independent, micropower volt-
age reference and comparator detection circuit that re-
mains active even when the device is shut down, as shown
in Figure 8. This allows users to accurately program an
input voltage at which the converter will turn on and off.
The falling threshold voltage on the RUN pin is equal to the
internal reference voltage of 1.248V. The comparator has
100mV of hysteresis to increase noise immunity.
The turn-on and turn-off input voltage thresholds are
programmed using a resistor divider according to the
following formulas:
VV
R
R
VV
R
R
IN OFF
IN ON
()
()
.•
.•
=+
=+
1 248 1 2
1
1 348 1 2
1
12
LTC3704
3704fb
APPLICATIO S I FOR ATIO
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+
RUN
COMPARATOR
VIN
RUN
R2
R1
INPUT
SUPPLY OPTIONAL
FILTER
CAPACITOR
+
GND
3704 F08a
BIAS AND
START-UP
CONTROL
1.248V
μPOWER
REFERENCE
6V
Figure 8b. On/Off Control Using External Logic
Figure 8c. External Pull-Up Resistor On
RUN Pin for “Always On” Operation
Figure 8a. Programming the Turn-On and Turn-Off Thresholds Using the RUN Pin
+
RUN
COMPARATOR
1.248V
3704 F08b
RUN
6V
EXTERNAL
LOGIC CONTROL
+
RUN
COMPARATOR
V
IN
RUN
R2
1M
INPUT
SUPPLY
+
GND 1.248V
3704 F08c
6V
The resistor R1 is typically chosen to be less than 1M.
For applications where the RUN pin is only to be used as
a logic input, the user should be aware of the 7V
Absolute Maximum Rating for this pin! The RUN pin can
be connected to the input voltage through an external 1M
resistor, as shown in Figure 8c, for “always on” operation.
13
LTC3704
3704fb
Applications Circuits
A simple positive-to-negative application circuit for the
LTC3704 is shown in Figure 1. The basic operation of this
circuit is shown in Figure 9. During the on-time the
inductor currents flow through the switch, and during the
off-time these currents flow through the output diode. The
use of inductors in series with both the input and output
results in continuous currents in these capacitors, result-
ing in low input and output noise. Discontinuous currents
flow in the switch, the coupling capacitor, and the diode.
Peak and Average Input and Switch Currents
The control loop in the LTC3704 is measuring the peak
switch current (either by using the R
DS(ON)
of the power
MOSFET or by using a sense resistor in the MOSFET
source), so the output current needs to be reflected back
to the switch in order to dimension the power MOSFET and
inductors properly. Based on the fact that, ideally, the
input power is equal to the output power, the maximum
average input current is:
II
D
D
IN MAX O MAX MAX
MAX
() ()
–•
=1
where I
O(MAX)
is a negative number. The peak input
current is:
II
D
D
IN PEAK O MAX MAX
MAX
() ()
••
=+
121
χ
In a positive-to-negative converter, however, the switch
current is equal to I
IN
+ I
O
, so the maximum average switch
current is:
II
D
SW MAX O MAX
MAX
() ()
=
1
1
and the peak switch current is:
II
D
SW PEAK O MAX MAX
() ()
••
=+
12
1
1
χ
The maximum duty cycle, D
MAX
, should be calculated at
minimum V
IN
.
Ripple Current ΔI
L
and the ‘χ’ Factor
The constant ‘χ’ in the equation above represents the
percentage peak-to-peak total ripple current in the induc-
tor, relative to its maximum value. For example, if 30%
ripple current is chosen, then χ = 0.30, and the peak
current is 15% greater than the average.
For a current mode converter operating in CCM, slope
compensation must be added for duty cycles above 50%
in order to avoid subharmonic oscillation. For the LTC3704,
this ramp compensation is internal. Having an internally
fixed ramp compensation waveform, however, does place
some constraints on the value of the inductor and the
operating frequency. If too large an inductor is used, the
resulting current ramp (ΔI
L
) will be small relative to the
APPLICATIO S I FOR ATIO
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Figure 9. Positive-to-Negative Converter Operation
Duty Cycle Considerations
For the positive-to-negative converter shown in Figure 1,
the duty cycle of the main switch in CCM is:
DV
VV
O
OIN
=
where V
O
is a negative number. The maximum output
voltage for this converter (in CCM) is:
VV D
D
O MAX IN MIN MAX
MAX
() ()
=
1
The maximum duty cycle capability of the LTC3704 is
typically 92%.
+
+–
+
ON
RL
VOUT
VIN
L1 L2
a) Current Flow During The Switch On-Time
+
+–
+
OFF
RL
VOUT
VIN
L1 L2
b) Current Flow During The Switch Off-Time
3704 F09
14
LTC3704
3704fb
internal ramp compensation (at duty cycles above 50%),
and the converter operation will approach voltage mode
(ramp compensation reduces the gain of the current loop).
If too small an inductor is used, but the converter is still
operating in CCM (near critical conduction mode), the
internal ramp compensation may be inadequate to prevent
subharmonic oscillation. To ensure good current mode
gain and avoid subharmonic oscillation, it is recom-
mended that the ripple current in the inductor fall in the
range of 20% to 40% of the maximum average switch
current. For example, if the maximum average switch
current is 1A, choose a ΔI
L
between 0.2A and 0.4A, and a
value ‘χ’ between 0.2 and 0.4.
Inductor Selection
Selecting inductors for a positive-to-negative converter is
slightly more complicated than for a single-inductor topol-
ogy like a buck or boost. The use of separate, uncoupled
inductors can reduce the size of the solution, at the
expense of input and output ripple. Using a coupled
inductor complicates the design procedure, but can result
in significantly lower input and/or output ripple. It will also
reduce the number of components that the purchasing
department has to keep track of.
Regardless of the design goals, however, the inductor
selection process is an iterative one. The best recommen-
dation is to use the equations as a guideline, and then to
build a solution and measure the circuit’s performance. If
the measured performance deviates from the design guide-
lines, substitute a bigger (or smaller) inductor, as appro-
priate, and repeat the measurements. In addition, do your
best to minimize layout parasitics, which can have a
significant effect on circuit performance.
The inductor currents for a positive-to-negative converter
are calculated at full load current and minimum input
voltage. The peak inductor currents can be significantly
higher than the output current, especially with smaller
inductors and lighter loads. The following formulae as-
sume uncoupled inductors and CCM operation.
II
D
D
II
L PEAK O MAX MAX
MAX
L PEAK O MAX
1
2
121
12
() ()
() ()
••
=+
=+
χ
χ
where “χ” represents the percentage of ripple current. In
a positive-to-negative converter, however, the switch cur-
rent is the sum of the two inductor currents. Therefore,
II
D
SW PEAK O MAX
MAX
() ()
–•
=+
12
1
1
χ
Since the control loop is looking at the switch current, and
since the internal slope compensation is acting on this
switch current, the ripple current percentage should be
between 20% and 40% of the maximum average current
at V
IN(MIN)
and I
O(MAX)
. This corresponds to a value of “χ
in the equations above between 0.20 and 0.40. Expressing
this ripple current as a function of the output current
results in the following equation for calculating the induc-
tor value:
LL V
If
D
IN MIN
SW
MAX
12==
()
Δ
where:
ΔII D
SW O MAX
MAX
=–•
()
χ1
1
By using a coupled inductor with a 1:1 turns ratio, the value
of inductance in the equation above can be replaced by 2L
due to mutual inductance. Doing this maintains the same
total ripple current and energy storage in the inductor.
Substituting 2L yields the following equation for 1:1
coupled inductors:
LL V
If
D
IN MIN
L
MAX
12
2
==
()
••
Δ
For the case of uncoupled inductors, choose minimum
saturation currents based on the peak currents outlined in
APPLICATIO S I FOR ATIO
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15
LTC3704
3704fb
the initial equations for I
L1(PEAK)
and I
L2(PEAK)
. If a coupled
inductor is used, make sure that the minimum saturation
current for the parallel configuration exceeds the maxi-
mum switch current, or:
II
D
LSAT MIN O MAX
MAX
() ( )
–•
+
12
1
1
χ
The saturation current rating should be checked at mini-
mum input voltage (which results in the highest average
inductor current) and maximum load current.
Operating in Discontinuous Mode
Discontinuous mode operation occurs when the load
current is low enough to allow the inductor current to run
out during the off-time of the switch, as shown in
Figure 10. Once the inductor current is near zero, the
switch and diode capacitances resonate with the induc-
tance to form damped ringing at 1MHz to 10MHz. If the
off-time is long enough, the drain voltage will settle to the
input voltage.
Depending on the input voltage and the residual energy in
the inductor, this ringing can cause the drain of the power
MOSFET to go below ground where it is clamped by the
body diode. This ringing is not harmful to the IC and it has
not been shown to contribute significantly to EMI. Any
attempt to damp it with a snubber will degrade the efficiency.
Power MOSFET or Sense Resistor Selection
If the maximum voltage on the drain of the power MOSFET
(which is V
IN(MAX)
+ V
OUT
, plus any transients) is less than
36V then the circuit can take advantage of the LTC3704’s
No R
SENSE
technology in order to improve efficiency and
eliminate the sense resistor. For higher switch voltages
the SENSE pin should be connected to a resistor in the
source of the power MOSFET, as shown in Figure 2.
Internal leading-edge blanking is provided in the LTC3704
to eliminate the need for filtering components on the
SENSE pin.
In both positive-to-negative and flyback converters the
maximum switch current is equal to the input current plus
the output current. As a result, the peak switch current is:
II
D
SW PEAK O MAX
MAX
() ()
–•
=+
12
1
1
χ
where I
O(MAX)
is a negative number.
During the switch on-time, the control circuit limits the
maximum voltage drop across the power MOSFET to
150mV (at low duty cycles). The peak switch current is
therefore limited to 150mV/R
DS(ON)
. The relationship be-
tween the maximum load current, the duty cycle and the
R
DS(ON)
of the power MOSFET is:
RV
I
DS ON SENSE MAX
SW PEAK
() ()
()
RV D
I
DS ON SENSE MAX MAX
OMAX
() ( )
()
••
+
1
12
χρΤ
again, where I
O(MAX)
is a negative number. The V
SENSE(MAX)
term is typically 150mV at low duty cycle, and is reduced
to about 100mV at a duty cycle of 92% due to slope
compensation, as shown in Figure 11. The ρ
Τ
term ac-
counts for the temperature coefficient of the R
DS(ON)
of the
MOSFET, which is typically 0.4%/°C. Figure 12 illustrates
the variation of R
DS(ON)
over temperature for a typical
power MOSFET (normalized for simplicity).
or
Figure 10. Discontinuous Mode Waveforms
(MODE/SYNC = INTVCC, Pulse-Skip Mode)
for the Circuit in Figure 1.
APPLICATIO S I FOR ATIO
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V
IN
= 15V
NO LOAD
V
DS
10V/DIV
I
L1
1A/DIV
1μs/DIV 3704 F10
16
LTC3704
3704fb
Another method of choosing which power MOSFET to use
is to check the maximum output current for a given
R
DS(ON)
, since MOSFET on-resistances are generally
available in discrete values.
IV D
R
O MAX SENSE MAX MAX
DS ON
() ()
()
–•
••
=
+
1
12
χρΤ
For the case where a conventional sense resistor is used,
RV D
I
SENSE SENSE MAX MAX
O MAX
=
+
()
()
1
12
χ
Sense resistors are generally low TC and are available with
different ranges of tolerance depending on price. The
power dissipated in the sense resistor is:
PI RD
SENSE SW PEAK SENSE MAX
=
()
••
2
Calculating Power MOSFET Switching and Conduction
Losses and Junction Temperatures
In order to calculate the junction temperature of the power
MOSFET, the power dissipated by the device must be
known. This power dissipation is a function of the duty
cycle, the load current and the junction temperature itself
(due to the positive temperature coefficient of its RDS(ON)).
As a result, some iterative calculation is normally required
to determine a reasonably accurate value. Since the
con
troller is using the MOSFET as both a switching and a
sensing element, care should be taken to ensure that the
converter is capable of delivering the required load current
over all operating conditions (line voltage and tempera-
ture), and for the worst-case specifications for V
SENSE(MAX)
and the R
DS(ON)
of the MOSFET listed in the manufacturer’s
data sheet.
The power dissipated by the MOSFET in a positive-to-
negative converter is:
PI
DRD
kV V I
DCf
FET OMAX
MAX
DS ON MAX T
IN O OMAX
MAX
RSS
=
+
••
•( ) ••
() ()
.()
1
1
2
185
ρ
where I
O(MAX)
and V
O
are negative numbers.
The first term in the equation above represents the
I
2
R losses in the device, and the second term, the switch-
ing losses. The constant, k = 1.7, is an empirical factor
inversely related to the gate drive current and has the
dimension of 1/current.
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
formula:
T
J
= T
A
+ P
FET
• R
TH(JA)
Figure 12. Normalized RDS(ON) vs Temperature
Figure 11. Maximum SENSE Threshold Voltage vs Duty Cycle
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DUTY CYCLE
0
MAXIMUM CURRENT SENSE VOLTAGE (mV)
100
150
0.8
3704 F11
50
00.2 0.4 0.5 1.0
200
JUNCTION TEMPERATURE (°C)
–50
ρ
T
NORMALIZED ON RESISTANCE
1.0
1.5
150
3704 F12
0.5
0050 100
2.0
17
LTC3704
3704fb
The R
TH(JA)
to be used in this equation normally includes
the R
TH(JC)
for the device plus the thermal resistance from
the case to the ambient temperature (R
TH(CA)
). This value
of T
J
can then be compared to the original, assumed value
used in the iterative calculation process.
Output Diode Selection
To maximize efficiency, a fast switching diode with low
forward drop and low reverse leakage is desired. The
output diode in a positive-to-negative converter conducts
current during the switch off-time. The peak reverse
voltage that the diode must withstand is equal to V
IN(MAX)
– V
O
. The average forward current in normal operation is
equal to the output current, and the peak current is equal
to the peak inductor current.
II
D
D PEAK O MAX
MAX
() ()
–•
=+
12
1
1
χ
The power dissipated by the diode is:
P
D
= I
O(MAX)
• V
D
and the diode junction temperature is:
T
J
= T
A
+ P
D
• R
TH(JA)
The R
TH(JA)
to be used in this equation normally includes
the R
TH(JC)
for the device plus the thermal resistance from
the board to the ambient temperature in the enclosure.
Remember to keep the diode lead lengths short and to
observe proper switch-node layout (see Board Layout
Checklist) to avoid excessive ringing and increased
dissipation.
Selecting the DC Coupling Capacitor
The voltage on the coupling capacitor in a positive-to-
negative converter is V
IN(MAX)
– V
O
, plus any additional ΔV
due to the ripple currents in the inductors. Generally, the
DC coupling capacitor is dimensioned based on the high
RMS ripple which flows in it, as shown in Figure 13.
The minimum RMS current rating of this capacitor must
exceed:
II
D
D
RMS CAP O MAX MAX
MAX
() ( )
–•
=1
A low ESR and ESL, X5R- or X7R-type ceramic capacitor
is recommended here.
Selecting the Output Capacitor
The output ripple voltage appears as a triangular wave-
form riding on V
O
, due to the ripple current of L2 (the DC
component of the current in L2 equals the output current).
This ripple current flows through the ESR and bulk capaci-
tance of the output capacitor to produce the overall ripple
voltage on this node. Using the off-time to calculate this
ripple current results in the following equation for ΔI
L2
:
ΔID
f
V
L
LMAX O
21
2
=
where V
O
is a negative number. The output ripple voltage
is therefore:
ΔVD
f
V
L
ESR fC
OP P MAX O
O
(–)
––
••
=
1
2
1
8
The ESR can be minimized by using high quality, X5R- or
X7R-dielectric ceramic capacitor in parallel with a larger
value tantalum or aluminum electrolytic bulk capacitor.
Depending upon the application, it may be that the ceramic
capacitor alone will be sufficient.
The RMS ripple current rating of the output capacitor
needs to be greater than:
APPLICATIO S I FOR ATIO
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Figure 13. Ripple Current in the DC Coupling Capacitor
1A/DIV
500ns/DIV 3704 F13
18
LTC3704
3704fb
ID
f
V
L
RMS COUT MAX O
() (– )
1
12
1
2
It should be noted that these equations assume no cou-
pling between the inductors. If the inductors are wound on
the same core, the ripple currents at the input and output
can be tuned to very low values, and so the equations
above would be extremely conservative. It is highly rec-
ommended that the user experiment in the lab with the
same magnetics and capacitors which will be used in
production.
Note that the ripple current ratings from capacitor manu-
facturers are often based on only 2000 hours of life. This
makes it advisable to further derate the capacitor or to
choose a capacitor rated at a higher temperature than
required. Several capacitors may also be placed in parallel
to meet size or height requirements in the design.
Manufacturers such as Nichicon, United Chemicon and
Sanyo should be considered for high performance through-
hole capacitors. The OS-CON semiconductor dielectric
capacitor available from Sanyo has the lowest product of
ESR and size of any aluminum electrolytic, at a somewhat
higher price.
In surface mount applications, multiple capacitors may
have to be placed in parallel in order to meet the ESR or
RMS current handling requirements of the application.
APPLICATIO S I FOR ATIO
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Table 1. Recommended Component Manufacturers
VENDOR COMPONENTS TELEPHONE WEB ADDRESS
AVX Capacitors (207) 282-5111 avxcorp.com
BH Electronics Inductors, Transformers (952) 894-9590 bhelectronics.com
Coilcraft Inductors (847) 639-6400 coilcraft.com
Coiltronics Inductors (407) 241-7876 coiltronics.com
Diodes, Inc Diodes (805) 446-4800 diodes.com
Fairchild MOSFETs (408) 822-2126 fairchildsemi.com
General Semiconductor Diodes (516) 847-3000 generalsemiconductor.com
International Rectifier MOSFETs, Diodes (310) 322-3331 irf.com
IRC Sense Resistors (361) 992-7900 irctt.com
Kemet Tantalum Capacitors (408) 986-0424 kemet.com
Magnetics Inc Toroid Cores (800) 245-3984 mag-inc.com
Microsemi Diodes (617) 926-0404 microsemi.com
Murata-Erie Inductors, Capacitors (770) 436-1300 murata.co.jp
Nichicon Capacitors (847) 843-7500 nichicon.com
On Semiconductor Diodes (602) 244-6600 onsemi.com
Panasonic Capacitors (714) 373-7334 panasonic.com
Sanyo Capacitors (619) 661-6835 sanyo.co.jp
Sumida Inductors (847) 956-0667 sumida.com
Taiyo Yuden Capacitors (408) 573-4150 t-yuden.com
TDK Capacitors, Inductors (562) 596-1212 component.tdk.com
Thermalloy Heat Sinks (972) 243-4321 aavidthermalloy.com
Tokin Capacitors (408) 432-8020 tokin.com
Toko Inductors (847) 699-3430 tokoam.com
United Chemicon Capacitors (847) 696-2000 chemi-com.com
Vishay/Dale Resistors (605) 665-9301 vishay.com
Vishay/Siliconix MOSFETs (800) 554-5565 vishay.com
Vishay/Sprague Capacitors (207) 324-4140 vishay.com
Zetex Small-Signal Discretes (631) 543-7100 zetex.com
19
LTC3704
3704fb
Aluminum electrolytic and dry tantalum capacitors are
both available in surface mount packages. In the case of
tantalum, it is critical that the capacitors have been surge
tested for use in switching power supplies. An excellent
choice is AVX TPS series of surface mount tantalum. Also,
ceramic capacitors are now available with extremely low
ESR, ESL and high ripple current ratings.
Input Capacitor Selection
The input voltage source impedance determines the size of
the input capacitor, which is typically in the range of 10μF
to 100μF. A low ESR capacitor is recommended, although
it is not as critical as for the output capacitor.
The RMS input capacitor ripple current for a positive-to-
negative converter is:
IV
Lf D
RMS CIN IN MIN MAX() ()
=1
12 1
Please note that the input capacitor can see a very high
surge current when a battery is suddenly connected to the
input of the converter and solid tantalum capacitors can
fail catastrophically under these conditions. Be sure to
specify surge-tested capacitors!
Burst Mode Operation and Considerations
The choice of MOSFET R
DS(ON)
and inductor value also
determines the load current at which the LTC3704 enters
Burst Mode operation. When bursting, the controller clamps
the peak inductor current to approximately:
ImV
R
BURST PEAK DS ON
() ()
=30
which represents about 20% of the maximum 150mV
SENSE pin voltage. The corresponding average current
depends upon the amount of ripple current. Lower induc-
tor values (higher ΔI
L
) will reduce the load current at which
Burst Mode operations begins, since it is the peak current
that is being clamped.
The output voltage ripple can increase during Burst Mode
operation if ΔI
L
is substantially less than I
BURST
. This can
occur if the input voltage is very low or if a very large
inductor is chosen. At high duty cycles, a skipped cycle
causes the inductor current to quickly decay to zero.
However, because ΔI
L
is small, it takes multiple cycles for
the current to ramp back up to I
BURST(PEAK)
. During this
inductor charging interval, the output capacitor must
supply the load current and a significant droop in the
output voltage can occur. Generally, it is a good idea to
choose a value of inductor ΔI
L
between 20% and 40% of
I
IN(MAX)
. The alternative is to either increase the value of
the output capacitor or disable Burst Mode operation
using the MODE/SYNC pin.
Burst Mode operation can be defeated by connecting the
MODE/SYNC pin to a high logic-level voltage (either with
a control input or by connecting this pin to INTV
CC
). In this
mode, the burst clamp is removed, and the chip can
operate at constant frequency from continuous conduc-
tion mode (CCM) at full load, down into deep discontinu-
ous conduction mode (DCM) at light load. Prior to skip-
ping pulses at very light load (i.e., <5-10% of full load), the
controller will operate with a minimum switch on-time in
DCM. Pulse skipping prevents a loss of control of the
output at very light loads and reduces output voltage
ripple.
Checking Transient Response
The regulator loop response can be verified by looking at
the load transient response. Switching regulators gener-
ally take several cycles to respond to an instantaneous
step in resistive load current. When the load step occurs,
V
O
immediately shifts by an amount equal to (ΔI
LOAD
)(ESR),
and then C
O
begins to charge or discharge (depending on
the direction of the load step) as shown in Figure 14. The
Figure 14. Load Step Response for the Circuit in Figure 1.
APPLICATIO S I FOR ATIO
WUUU
VIN = 5V
VOUT = –5V
VOUT (AC)
100mV/DIV
IOUT (DC)
1A/DIV
250μs/DIV 3704 F14
2A
0.5A
20
LTC3704
3704fb
APPLICATIO S I FOR ATIO
WUUU
regulator feedback loop acts on the resulting error amp
output signal to return V
O
to its steady-state value. During
this recovery time, V
O
can be monitored for overshoot or
ringing that would indicate a stability problem.
A second, more severe transient can occur when connect-
ing loads with large (> 1μF) supply bypass capacitors. The
discharged bypass capacitors are effectively put in parallel
with C
O
, causing a nearly instantaneous drop in V
O
. No
regulator can deliver enough current to prevent this prob-
lem if the load switch resistance is low and it is driven
quickly. The only solution is to limit the rise time of the
switch drive in order to limit the inrush current di/dt to the
load.
Design Example: A 5V to 15V Input, –5V at 2A Output
Positive-to-Negative Converter
The design example presented here will be for the circuit
shown in Figure 1. The input voltage range is 5V to 15V,
and the output is -5V. The maximum load current is 2A at
an input voltage of 5V (3A peak), and 3A at an input voltage
of 15V (5A peak).
1. The maximum duty cycle of the main switch is:
DV
VV
MAX OUT
OUT IN MIN
===
()
%
5
10 50
2. Pulse-Skip operation is chosen, so the MODE/SYNC pin
is connected to the INTV
CC
pin.
3. The operating frequency is chosen to be 300kHz to
reduce the size of the inductors. From Figure 5, the resistor
from the FREQ pin to ground is 80.6k.
4. A total inductor ripple current of 40% of the maximum
is chosen, so the inductor ripple current is:
Δ=
Δ==
II D
D
IA
LOMAX
MAX
MAX
L
1
1
1
04 20 05
105 08
χ••
.•. .
–. .
()
For a standard 1:1 coupled inductor, the inductance is
therefore:
LL V
If
D
kH
IN MIN
LMAX
12
2
5
208300 05 52
1
==Δ
==μ
()
••
•.• •. .
The minimum saturation current for this inductor is:
II
D
A
LSAT MIN O MAX MAX
() ( )
–•
.•.•–. .
+
==
12
1
1
12 20 1
105 48
χ
The inductor chosen is a BH Electronics part # 510-1009,
which has an open circuit parallel inductance of 4.56μH
and a maximum dc current rating of 6.5A.
5. For the power MOSFET,
RV D
I
DS ON SENSE MAX MAX
OMAX
() ( )
()
••
+
1
12
χρΤ
At the maximum duty cycle of 50%, the maximum SENSE
pin voltage is reduced to 130mV due to slope compensa-
tion, as shown in Figure 11. Assuming a maximum
junction temperature of 125°C for the power MOSFET,
ρ
Τ
= 1.5, and
Rm
DS ON()
.• .–
–. . . .=Ω0 130 05 1
12 20 15 18 1
The MOSFET chosen was Siliconix/Vishay’s Si4884, which
has a maximum R
DS(ON)
= 16.5mΩ at V
GS
= 4.5V at 25°C.
The minimum BV
DSS
= 30V and the maximum gate charge
is Q
G
= 20nC.
6. The output diode must withstand a reverse voltage of
V
IN(MAX)
– V
O
= 20V and a continuous current of
I
O(MAX)
= 5.0A (peak output current at V
IN
= 15V). The peak
current in the diode is:
IIA
D PEAK O MAX() ()
=+
=126
χ
The power dissipated in this diode at full load is:
21
LTC3704
3704fb
APPLICATIO S I FOR ATIO
WUUU
P
D
= I
O(MAX)
• V
F
Assuming a maximum junction temperature of 125°C and
a forward voltage of approximately 0.33V at 3A (the
maximum output current at V
IN
= 15V), this diode will
dissipate 1W at full load. The diode selected was the
MBRD835L from On Semiconductor, packaged in a
D-Pak.
7. The DC coupling capacitor must be capable of handling
an RMS current of:
II D
DA
D PEAK O MAX MAX
MAX
() ()
–•
==
13
Figure 15. 5V to 15V Input, –5V Output at 2A-3A(5A Peak)
Positive-to-Negative Converter with Soft-Start and Undervoltage Lockout.
Figure 16. Efficiency vs Output Current Figure 17. Maximum Output Current vs Input Voltage
RUN
I
TH
NFB
FREQ
MODE/SYNC
SENSE
V
IN
INTV
CC
GATE
GND
LTC3704
R
T
80.6k
1%
R1
154k
1%
C
VCC
4.7μF
X5R
M1
C
IN
: TDK C5750X5R1C476M
C
DC
: TDK C5750X7R1C476M
C
OUT
: TDK C5750X5R0J107M
C
VCC
: TAIYO YUDEN LMK316BJ475ML
D1
L1* L2*
COUT
100μF
X5R
(X2)
V
IN
5V to 15V
VOUT
5.0V
2A to 3A
(5A PEAK)
GND
D1: ON SEMICONDUCTOR MBRD835L
D2: CDMSH-3
L1, L2: BH ELECTRONICS BH510-1009
M1: SILICONICS/VISHAY Si4884
Q1: MMBT3904
R
C
3k
C
C1
4.7nF
C
IN
47μF
X5R
1
2
3
4
56
7
8
10
9
CDC
47μF
X5R
3704 F15
R2
68.1k 1%
C1
1nF
R
FB1
1.21k
1%
R
FB2
3.65k
1%
Q1
D2
R
SS2
100ΩC
SS
10nF
R
SS1
750Ω
OUTPUT CURRENT (A)
0.001
EFFICIENCY (%)
0.1 10
100
90
80
70
60
50
40
30
20
3704 F16
0.01 1
VIN = 5V
VIN = 15V
VIN = 10V
FET = Si4884
L = BH510-1009
VO = –5V
FREQ = 300kHz
INPUT VOLTAGE (V)
510
IO(MAX) (A)
6
5
4
3
2
1
0
3704 F17
15
22
LTC3704
3704fb
ΔVk
kmV
OP P()
–..
.
–. •• .
=
=
105
300
50
35
0 0016 1
8 300 100 13 7
μ
μ
This ripple voltage calculation also assumes no coupling
between the inductors, making the 13.7mV number very
conservative.
Figure 15 illustrates the same basic application shown in
Figure 1, with the added features of soft-start and
undervoltage lockout on the input supply. Figures 16
through 21 illustrate the measured performance for this
converter. The peak efficiency is 87% at a load current of
2A and the peak-to-peak output ripple is less than 10mV.
Figures 19 and 20 illustrate the load step response at 5V
and 15V input, and Figure 21, the start-up characteristics
with a resistive load.
APPLICATIO S I FOR ATIO
WUUU
The capacitor used was a TDK 47μF, 16V X5R-dielectric
ceramic (C5750X5R1C476M), mainly because of its low
ESR (2.4mΩ) and high RMS current capability.
8. The peak-to-peak output ripple is:
ΔVD
f
V
L
ESR fC
OP P MAX O
O
()
––
••
=
1
2
1
8
As a first try, a TDK 100μF, 6.3V X5R-dielectric ceramic
capacitor was chosen (C5750X5R0J107M). This capaci-
tor has a very low 1.6mΩ of ESR. As a result, the peak-to-
peak output ripple voltage is:
Figure 18. Output Ripple Voltage and
Inductor Current for the Circuit in Figure 15
Figure 21. Soft-Start for the Circuit in Figure 15
Figure 20. Load Step Response at VIN = 15V
for the Circuit in Figure 15
Figure 19. Load Step Response at VIN = 5V
for the Circuit in Figure 15
VIN = 5V
IOUT = –2V
VOUT (AC)
10mV/DIV
IL2 (DC)
1A/DIV
1μs/DIV 3704 F18 VIN = 5V
VOUT (AC)
100mV/DIV
IOUT (DC)
1A/DIV
250μs/DIV 3704 F19
2A
0.5A
VIN = 15V
VOUT (AC)
100mV/DIV
IOUT (DC)
1A/DIV
250μs/DIV 3704 F20
2A
0.5A
V
IN
= 5V
V
OUT
1V/DIV
I
OUT
1A/DIV
1ms/DIV 3704 F21
V
OUT
I
OUT
23
LTC3704
3704fb
APPLICATIO S I FOR ATIO
WUUU
PC Board Layout Checklist
1. In order to minimize switching noise and improve
output load regulation, the GND pin of the LTC3704
should be connected directly to 1) the negative termi-
nal of the INTVCC decoupling capacitor, 2) the negative
terminal of the output decoupling capacitors, 3) the
source of the power MOSFET or the bottom terminal of
the sense resistor, 4) the negative terminal of the input
capacitor and 5) at least one via to the ground plane
immediately adjacent to Pin 6. The ground trace on the
top layer of the PC board should be as wide and short
as possible to minimize series resistance and induc-
tance.
LTC3704 M1
V
IN
3704 F??
V
OUT
L1
R
T
R
C
C
C1
R3
C
IN
C
OUT
C
VCC
R1
R2
PSEUDO-KELVIN
SIGNAL GROUND
CONNECTION
TRUE REMOTE
OUTPUT SENSING
VIAS TO GROUND
PLANE
R4
PIN 1
C
OUT
D1
L2
C
DC
C3
C
C2
1
2
3
4
5
6
12
11
10
9
8
7
Figure 22. LTC3704 Positive-to-Negative Converter Suggested Layout
RUN
I
TH
NFB
FREQ
MODE/
SYNC
SENSE
V
IN
INTV
CC
GATE
GND
LTC3704
R4
10
9
8
7
6
1
2
3
4
5C
VCC
PSEUDO-KELVIN
GROUND CONNECTION
C
IN
M1 D1
L1
V
IN
GND
3704 F23
C
OUT
R
C
R1
R
T
BOLD LINES INDICATE HIGH CURRENT PATHS
R2
C
C1
R3
+
C3
L2
C
DC
V
OUT
C
C2
Figure 23. LTC3704 Positive-to-Negative Converter Layout Diagram
24
LTC3704
3704fb
APPLICATIO S I FOR ATIO
WUUU
2. Beware of ground loops in multiple layer PC boards. Try
to maintain one central ground node on the board and
use the input capacitor to avoid excess input ripple for
high output current power supplies. If the ground plane
is to be used for high DC currents, choose a path away
from the small-signal components.
3. Place the C
VCC
capacitor immediately adjacent to the
INTV
CC
and GND pins on the IC package. This capacitor
carries high di/dt MOSFET gate drive currents. A low
ESR X5R-dielectric 4.7μF ceramic capacitor works well
here.
4. The high di/dt loop from the drain of the power MOSFET,
through the coupling capacitor and back through the
diode to ground should be kept as tight as possible to
reduce inductive ringing. Excess inductance can cause
increased stress on the power MOSFET and increase HF
noise on the drain node. It is also important to keep the
cathode of the diode as close as possible to the MOSFET
source or the bottom of the sense resistor.
5. Check the stress on the power MOSFET by measuring
its drain-to-source voltage directly across the device
terminals (reference the ground of a single scope probe
directly to the source pad on the PC board). Beware of
inductive ringing which can exceed the maximum speci-
fied voltage rating of the MOSFET. If this ringing cannot
be avoided and exceeds the maximum rating of the
device, either choose a higher voltage device or specify
an avalanche-rated power MOSFET. Not all MOSFETs
are created equal (some are more equal than others).
6. Place the small-signal components away from high
frequency switching nodes. In the layout shown in
Figure 22, all of the small-signal components have been
placed on one side of the IC and all of the power
components have been placed on the other. This also
allows the use of a pseudo-Kelvin connection for the
signal ground, where high di/dt gate driver currents
flow out of the IC ground pin in one direction (to the
bottom plate of the INTV
CC
decoupling capacitor) and
small-signal currents flow in the other direction.
7. If a sense resistor is used in the source of the power
MOSFET, minimize the capacitance between the SENSE
pin trace and any high frequency switching nodes. The
LTC3704 contains an internal leading edge blanking
time of approximately 180ns, which should be ad-
equate for most applications.
8. For optimum load regulation and true remote sensing,
the top of the output resistor divider should connect
independently to the top of the output capacitor (Kelvin
connection), staying away from any high dV/dt traces.
Place the divider resistors near the LTC3704 in order to
keep the high impedance FB node short.
9. For applications with multiple switching power con-
verters connected to the same input supply, make sure
that the input filter capacitor for the LTC3704 is not
shared with other converters. AC input current from
another converter could cause substantial input voltage
ripple, and this could interfere with the operation of the
LTC3704. A few inches of PC trace or wire (L 100nH)
between the C
IN
of the LTC3704 and the actual source
V
IN
should be sufficient to prevent current sharing
problems.
25
LTC3704
3704fb
APPLICATIO S I FOR ATIO
WUUU
RUN
I
TH
NFB
FREQ
MODE/SYNC
SENSE
V
IN
INTV
CC
GATE
GND
LTC3704
R
T
80.6k
1%
C
VCC
4.7μF
X5R
M1
D1
L1* L2*
COUT
100μF
X5R
V
IN
3V to 5V
VOUT
8.0V
1.2A to 2.5A
GND
D1: DIODES INC B320B
L1, L2: BH ELECTRONICS BH 510-1009
M1: SILICONIX Si9426
R
C
14.7k
C
C1
4.7nF
C
IN
47μF
X5R
1
2
3
4
56
7
8
10
9
CDC
22μF
X5R
R
FB1
2.49k
1%
R
FB2
13.7k
1%
3704 F24
INPUT VOLTAGE (V)
5.0
3704 F25
3.5 4.0 4.5
3.0
I
O(MAX)
(A)
2
3
1
0
OUTPUT CURRENT (A)
0.001
EFFICIENCY (%)
0.1 10
100
95
90
85
80
75
70
65
60
55
50
3704 F26
0.01 1
V
IN
= 5V
V
IN
= 3V
Figure 24. 3V to 5V Input, –8V at 1.2A Output Converter
Figure 26. Output Efficiency at 3V and 5V Input
Figure 25. Maximum Output Current vs Input Voltage
Figure 28.Load Step Response at 5V InputFigure 27. Load Step Response at 3V Input
VIN = 3V
VOUT (AC)
100mV/DIV
IOUT (DC)
0.5A/DIV
250μs/DIV
3704 F27
1.2A
0.6A
V
IN
= 3V
V
OUT
(AC)
100mV/DIV
I
OUT
(DC)
0.5A/DIV
250μs/DIV
3704 F27
1.2A
0.6A
26
LTC3704
3704fb
+
RUN
ITH
NFB
FREQ
MODE/SYNC
SENSE
VIN
INTVCC
GATE
GND
LTC3704
RT
120k f = 200kHz
* VP5-0155 (PRIMARY = 3 WINDINGS IN PARALLEL)
C1
4.7μF
10V
X5R
+C
IN
220μF
16V
TPS
C3
10μF
25V
X5R
IRL2910
R
S
0.012Ω
D3
10BQ060
5
V
IN
7V TO 12V
T1*
1, 2, 3
R
C
82k
C
C1
1nF
C
C2
100pF
C
R
1nF
R1
49.9k
1%
R2
150k
1%
D4
10BQ060
6
D2
10BQ060
4
+
C4
10μF
25V
X5R
+C
OUT
3.3μF
100V
GND
V
OUT1
24V
200mA
V
OUT2
72V
200mA
+
C5
10μF
25V
X5R
+
C2
4.7μF
50V
X5R
R
FB1
2.49k
1%
R
FB2
45.3k
1%
UV + = 5.4V
UV – = 5.0V
3704 F29
Figure 29. High Power SLIC Supply
APPLICATIO S I FOR ATIO
WUUU
27
LTC3704
3704fb
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
U
PACKAGE DESCRIPTIO
MSOP (MS) 0603
0.53 ± 0.152
(.021 ± .006)
SEATING
PLANE
0.18
(.007)
1.10
(.043)
MAX
0.17 – 0.27
(.007 – .011)
TYP
0.127 ± 0.076
(.005 ± .003)
0.86
(.034)
REF
0.50
(.0197)
BSC
12345
4.90 ± 0.152
(.193 ± .006)
0.497 ± 0.076
(.0196 ± .003)
REF
8910 76
3.00 ± 0.102
(.118 ± .004)
(NOTE 3)
3.00 ± 0.102
(.118 ± .004)
(NOTE 4)
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
0.254
(.010) 0° – 6° TYP
DETAIL “A”
DETAIL “A”
GAUGE PLANE
5.23
(.206)
MIN
3.20 – 3.45
(.126 – .136)
0.889 ± 0.127
(.035 ± .005)
RECOMMENDED SOLDER PAD LAYOUT
0.305 ± 0.038
(.0120 ± .0015)
TYP
0.50
(.0197)
BSC
MS Package
10-Lead Plastic MSOP
(Reference LTC DWG # 05-08-1661)
28
LTC3704
3704fb
© LINEAR TECHNOLOGY CORPORATION 2006
LT 0307 REV B • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
FAX: (408) 434-0507
www.linear.com
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LT1964 ThinSOTTM Linear Low Dropout Regulator 200mA Output Current, Low Noise, 340mV Drop Out at 200mA,
5-Lead ThinSOT
LTC3401/LTC3402 1A/2A 3MHz Synchronous Boost Converters Up to 97% Efficiency, Very Small Solution, 0.5V V
IN
5V
ThinSOT is a trademark of Linear Technology Corporation.
High Efficiency Positive-to-Negative Converter
RT
80.6k
1%
R1
1.21k
1%
R2
3.65k
1%
R4
154k
1%
CVCC
4.7μF
M1
CIN: TDK C5570X5R1C476M
COUT1: TDK C5750X5R0J107M
COUT2: PANASONIC EEFUE0J151R
CDC: TDK C5750X7R1E226M
CVCC: TDK C2012X5R0J475K
D1
L1*
CIN
47μF
16V L2*
RC
9.1k
CC1
10nF
CC2
330pF
COUT1
100μF
6.3V
VIN
5V TO 15V
VOUT
–5V
5A
GND
3704 TA02
+
COUT2
150μF
6.3V
D1: FAIRCHILD MBR2035CT
L1, L2: COILTRONICS VP5-0053 (*COUPLED INDUCTORS, WITH 3
WINDINGS IN PARALLEL ON PRIMARY AND SECONDARY)
M1: INTERNATIONAL RECTIFIER IRF7822
CDC
22μF
25V
X7R
R5
68.1k
1%
C9
1nF
OPTIONAL
RUN
ITH
NFB
FREQ
MODE/SYNC
SENSE
VIN
INTVCC
GATE
GND
LTC3704
U
TYPICAL APPLICATIO