IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
Parameter Symbol Conditions Unit
min. typ. max.
D
namic characteristics2)
Input capacitance Ciss - 4700 - pF
Output capacitance Coss - 1260 -
Reverse transfer capacitance Crss - 580 -
Turn-on delay time td(on) -26-ns
Rise time tr-50-
Turn-off delay time td(off) -61-
Fall time tf-30-
Gate Char
e Characteristics2)
Gate to source charge Qgs -2537nC
Gate to drain charge Qgd - 69 116
Gate charge total Qg- 144 180
Gate plateau voltage Vplateau - 5.4 - V
Reverse Diode
Diode continous forward current2) IS- - 80 A
Diode pulse current2) IS,pulse - - 320
Diode forward voltage VSD
VGS=0 V, IF=80 A,
Tj=25 °C - 0.9 1.3 V
Reverse recovery time2) trr
VR=40 V, IF=IS,
diF/dt=100 A/µs - 110 140 ns
Reverse recovery charge2) Qrr
VR=40 V, IF=IS,
diF/dt=100 A/µs - 470 590 nC
2) Defined by design. Not subject to production test.
3) See diagram 13.
4) Qualified at -20V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 0.5K/W the chip is able to carry 132A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=40 V, VGS=10 V,
ID=80 A, RG=2.2 Ω
VDD=60 V, ID=80 A,
VGS=0 to 10 V
Rev. 1.0 page 3 2006-03-03
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