SIEMENS NPN Silicon Darlington Transistors BCV 29 BCV 49 @ For general AF applications @ High collector current @ High current gain @ Complementary types: BCV 28, BCV 48 (PNP) VPSO5162 Type Marking Ordering Code Pin Configuration | Package" (tape and reel) 1 2 3 4 BCV 29 EF Q62702-C1853 B| Cc | E | C | SOT-89 BCV 49 EG Q62702-C 1832 Maximum Ratings Parameter Symbol Values Unit BCV 29 BCV 49 Collector-emitter voltage Vceo 30 60 Vv Collector-base voltage Veeo 40 80 Emitter-base voltage Vepo 10 10 Collector current Ie 500 mA Peak collector current Tom 800 Base current Ip 100 Peak base current Teo 200 Total power dissipation, Ts = 130C | Pra 1 Ww Junction temperature Tj 150 C Storage temperature range Tata ~ 65... + 150 Thermal Resistance Junction - ambient?) RinJa <75 K/AV Junction - soldering point Rinus < 20 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. Semiconductor Group 837 5.91 SIEMENS BCV 29 BCV 49 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbo! Values Unit min. | typ. | max. DC characteristics Collector-emitter breakdown voltage Vieryceo Vv Ic=10mA BCV 29 30 - - BCV 49 60 - - Collector-base breakdown voltage Vierycso ic = 100 pA BCV 29 40 - - BCV 49 80 - - Emitter-base breakdown voltage, Je = 10 pA Veereso =| 10 - - Collector cutoff current Icso Ves = 30 V BCV 29 - - 100 =|nA Ves = 60 V BCV 49 - - 100 nA Vea = 30 V, Ta = 150 C BCV 29 - - 10 pA Ves = 60 V, Ta = 150 C BCV 49 ~ - 10 pA Emitter cutoff current, Ves = 4 V Texo - - 100 nA DC current gain?) ArE - Ie = 100 pA, Vee=1V BCV 29 4000 |- - BCV 49 2000 | - Ic= 10mA, Voe=5V BCV 29 10000 | - - BCV 49 4000 |- - Ic = 100 mA, Vee=5V BCV 29 20000 | - - BCV 49 10000 | - - c=0.5A, Vee=5V BCV 29 4000 |- - BCV 49 2000 |- ~ Collector-emitter saturation voltage) Veesa - - 1 V Ic = 100 mA, In = 0.1 mA Base-emitter saturation voltage) Vocsat - ~ 1.5 Ic = 100 mA; Je = 0.1 mA AC characteristics Transition frequency f - 150 |- MHz Ic = 50 mA, Vee = 5 V, f= 20 MHz Output capacitance Cobo - 3.5 - pF Vea = 10 V, f= 1 MHz 1) Pulse test: ts 300 us, D = 2%. Semiconductor Group SIEMENS BCV 29 BCV 49 Total power dissipation Pia = f (Ts"; Ts) * Package mounted on epoxy 1.2 EHPOO317 Ww Pi 1-0 0.8 0.6 0.4 0.2 0 50 100 = 150 t s 7; $7 Permissible pulse load Pic max Piioc = f (tp) BCV 29/49 EHPOO319 5 Choco Pret Tite AN tT COT PET Te a MI all 10? 5 oe nC CT a e ill Jl | 5 Ht th NT tat mill Hit 1a, ce i a mis bl s all ai, % ITS 10F 107? 1074 107 107 ss 10 ~ f, Semiconductor Group Collector cutoff current /cso = f (Ta) 104 acy 29/49 CHPOOS1B ogg nA to 10? to! 10 0 50 100 C 150 /, Transition frequency ft = f (Ic) Vee =5V 3 Bev 29/49 EHP00321 0 fy MHz 107 10 te 839 SIEMENS BCV 29 BCV 49 Collector-emitter saturation voltage Base-emitter saturation voltage Ic = f (Veesai) Ic = f (Vesa) hee = 1000 hre = 1000 103 BCY 29/49 EWPODS22 103 acy 29/49 EnPOO323 Ig mA 10? 10! 0 10 0 0.5 10 voi > Vetsat Collector-base capacitance Cceo = f (Vcxo) Emitter-base capacitance Ccpo = f (Vexo) BCv 49 EHP00324 10 Creo (Ccxo) Pe 0 107! 10 vo 10? Semiconductor Group Ig mA 10? 10! () 0 0 1.0 2.0 v 30 Vegsat DC current gain Are = f (/c) Voe=5V 5 BCv 29/49 EHPOO325 10 5 104 107! = 40 10! 107 ma 10