PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000A Back Side Metalization Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5802 thru 1N5806 UES1101 thru UES1106 CMR3U-01 Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (19-September 2003) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD17 Typical Electrical Characteristics R2 (19-September 2003)