Reflective Photosensors (Photo Reflectors) CNB2301 Reflective Photosensor Unit : mm Overview 9.01.0 CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo detector in a single resin package. 2.00.2 Mark for indicating anode side C0.5 1 3 2.70.2 0.4 Chip center 9.01.0 Visible light cutoff resin is used 4-0.7 2.00.2 Features Ultraminiature : 2.7 x 3.4 mm 4-0.5 0.1 High current-transfer ratio 2 0.5 0.15 4 1.50.2 1.8 Detection of paper, film and cloth Detection of position and edge Detection of rotary positioning Liquid level sensor 3.40.3 , ,, Applications Start, end mark detection of magnetic tape 1 2 3 4 Pin connection Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation VR 3 Unit V IF 50 mA PD*1 75 mW IC 30 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector current VCEO 20 V VECO 5 V Collector power dissipation PC*2 75 mW Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C Temperature *1 Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C. Electrical Characteristics (Ta = 25C) Parameter Symbol Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current typ max Unit VF IF = 50mA 1.3 1.5 V IR VR = 3V 0.01 10 A Ct VR = 0V, f = 1MHz ICEO Conditions min 30 VCE = 10V IC*1, *2 VCC = 5V, IF = 2mA, RL = 100, d = 1mm Collector current Leakage current Transfer characteristics Response time ID 0.46 VCC = 5V, IF = 2mA, RL = 100 tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100 Class Q R S IC (mA) 0.46 to 1.75 1.3 to 4.95 3.15 to 12.0 *4 Time A s V current measurement method Evaporated Al Glass plate (t = 1mm) required for the output current to increase from 10% to 90% of its final value required for the output current to decrease from 90% to 10% of its initial value ,, ,, *3 Time 2.0 1.5 *2 Output classifications A mA , ,,, ,,, ,,, ,,,, C 1.0 12.0 150 Collector to emitter saturation voltage VCE(sat) IF = 5mA, IC = 0.5mA *1 I pF IF IC RL VCC 1 CNB2301 Reflective Photosensors (Photo Reflectors) IF , IC -- Ta IF -- VF 1.6 Ta = 25C IF IC 20 10 VF (V) 40 Forward voltage 40 30 IF = 50mA 50 IF (mA) 50 30 20 60 80 0 100 0 1.6 2.0 1 10 2 5mA 1 2mA 1mA 10 -1 1 40 VCC = 10V Ta = 25C tr (s) RL = 1k Rise time 500 100 10 2 Ambient temperature Ta (C ) 1 10 -2 10 -1 40 100 10 100 20 60 80 100 IC -- d 10 3 80 0 Ambient temperature Ta (C ) 1 Collector current IC (mA) 10 80 60 VCC = 5V IF = 2mA , ,, 10 60 100 80 tr -- IC VCE = 10V 40 80 120 0 - 40 - 20 10 2 10 10 4 20 60 VCC = 5V IF = 2mA RL = 100 Collector to emitter voltage VCE (V) 10 -1 40 IC -- Ta IF = 10mA 10 10 -2 10 -1 10 3 1 20 160 ICEO -- Ta 0 0 Ambient temperature Ta (C ) IC (%) IC (mA) 10 10 -2 - 40 - 20 0 - 40 - 20 2.4 Ta = 25C Collector current IC (mA) Collector current 1.2 IC -- VCE 10 2 10 0.8 10 2 Forward current IF (mA) ICEO (A) 0.4 Forward voltage VF (V) VCC = 5V Ta = 25C RL = 100 d = 1mm 1 0.4 Relative output current 40 IC -- IF Dark current 1mA IC (%) 20 10 3 10 2 10mA 0.8 Relative output current 0 Ambient temperature Ta (C ) 10 -1 1.2 10 0 - 25 2 VF -- Ta 60 Forward current Forward current, collector current IF , IC (mA) 60 d 40 20 0 0 2 4 6 Distance d (mm) 8 10