1
Reflective Photosensors (Photo Reflectors)
2.0±0.2 2.0±0.2
Mark for indicating
anode side
C0.5
3.4±0.3
0.4
2.7±0.2
9.0±1.0 9.0±1.0
Chip
center
1.8
24
13
4-0.5
±0.1
4-0.7
0.5
0.15
Pin connection
Unit : mm
1.5±0.2
1432
,,
,
*1 Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
Input (Light
Reverse voltage (DC)
V
R
3V
emitting diode)
Forward current (DC)
I
F
50 mA
Power dissipation
P
D*1
75 mW
Collector current
I
C
30 mA
Output (Photo
Collector to emitter voltage
V
CEO
20 V
transistor)
Emitter to collector voltage
V
ECO
5V
Collector power dissipation
P
C*2
75 mW
Temperature
Operating ambient temperature
T
opr
–25 to +85 ˚C
Storage temperature
T
stg
–30 to +100
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Forward voltage (DC)
V
F
I
F
= 50mA 1.3 1.5 V
characteristics
Reverse current (DC)
I
R
V
R
= 3V 0.01 10 µA
Capacitance between terminals C
t
V
R
= 0V, f
= 1MHz 30 pF
Output characteristics
Collector cutoff current
I
CEO
V
CE
= 10V 1.0 µA
Collector current
I
C*1, *2
V
CC
= 5V, I
F
= 2mA, R
L
= 100Ω, d
= 1mm
0.46 12.0 mA
Transfer
Leakage current
I
D
V
CC
= 5V, I
F
= 2mA, R
L
= 100Ω2.0 µA
characteristics
Response time
t
r*3
, t
f*4
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω150 µs
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 5mA, I
C
= 0.5mA 1.5 V
CNB2301
Reflective Photosensor
Features
Ultraminiature : 2.7 × 3.4 mm
Visible light cutoff resin is used
High current-transfer ratio
Overview
CNB2301 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Darlington phototransistor used as the photo
detector in a single resin package.
*3 Time required for the output current to increase from 10% to 90% of its final value
*4 Time required for the output current to decrease from 90% to 10% of its initial value
*1 IC classifications
Class Q R S
I
C
(mA) 0.46 to 1.75 1.3 to 4.95 3.15 to 12.0
Evaporated Al
Glass plate
(t = 1mm)
,
,
V
CC
,
,
R
L
I
F
I
C
,,
,,,
,,,
,,,
,,
,
*2 Output current measurement method
Applications
Detection of paper, film and cloth Detection of position and edge
Detection of rotary positioning Liquid level sensor
Start, end mark detection of magnetic tape
2
CNB2301 Reflective Photosensors (Photo Reflectors)
I
F
, I
C
— Ta
Forward current, collector current I
F
, I
C
(mA)
60
50
40
30
20
10
Ambient temperature Ta (˚C )
0 20406080100
0
– 25
I
F
— V
F
60
30
20
10
50
40
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4 0.8 1.2 1.6 2.42.0
00
Ta = 25˚C
V
F
— Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
0 20406080100
0
– 40 – 20
0 20406080100– 40 – 20
0 20406080100– 40 – 20
I
C
— I
F
10
3
10
2
10
1
Forward current I
F
(mA)
Collector current I
C
(mA)
10 10
2
10
3
10
–1
1
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
d = 1mm
I
C
— V
CE
10
2
10
1
10
–1
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
11010
2
10
–2
10
–1
Ta = 25˚C
Relative output current I
C
(%)
I
C
— Ta
160
120
80
40
Ambient temperature Ta (˚C )
0
V
CC
= 5V
I
F
= 2mA
R
L
= 100Ω
I
CEO
— Ta
10
2
1
10
–1
10
Ambient temperature Ta (˚C )
V
CE
= 10V
Dark current I
CEO
(µA)
10
–2
11010
–1
t
r
— I
C
10
Collector current I
C
(mA)
Rise time t
r
(µs)
1
10
–2
10
4
10
3
10
2
V
CC
= 10V
Ta = 25˚C
Distance d (mm)
I
C
— d
100
60
40
20
80
Relative output current I
C
(%)
246 108
0
0
V
CC
= 5V
I
F
= 2mA
I
F
I
C
10mA
1mA
I
F
= 50mA
I
F
= 10mA
5mA
2mA
1mA
100Ω
R
L
= 1kΩ
500Ω
d
,,
,
