COMPUTER DIODE 200mA Low Power, Switching FEATURES Metallurgical Bond Qualified to MIL-S-19500/231 Planar Passivated Chip DO-7 or DO-35 Package Non-JAN Available ABSOLUTE MAXIMUM RATINGS, AT 25C Reverse Breakdown Voltage ....... Peak Working Voltage ........ Average Output Current Surge Current (Isec) ........ (psec) Operating Temperature Range ............0.. Storage Temperature Range (1N4150).. (1N3600) MECHANICAL SPECIFICATIONS 1N3600; JAN, JANTX & JANTXV 1N3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 DESCRIPTION This series of switching diodes is useful in many computer switching applications, for both military and commercial systems. 65C to +200C .. =65C to +175C DO-7 DO-35 J, JTX & JTXV 1N3600 J, STX & JTXV 1N4150, 1N4150-1 1N3600 : iN4150 A i D coc ll | -+ + f lea B ele pm INCHES MILLIMETERS & | 678-107 1.98 -2.72 142-191 B | .195-.300 4.96-7.62 3.56- 4.57 C [1.0 MIN.-1.5 MAX. [25.4 MIN. - 38.1 MAX. 4 MIN. - D[_.018-.022 46-56 Microsemi Corp. Watertown 5-9 The diode experts ELECTRICAL SPECIFICATIONS (at 25C unless noted) IN3600, 1N4150; JAN, JANTX & JANTXV 1N3600, 1N4150, 1N4150-1 Reverse Breakdown Characteristics Forward Voltage Forward Voltage Forward Voltage Forward Voltage Forward Voltage Voltage Conditi Ver Vee = aeimad 1,=108'made | 1, = 20pimad BV nditions _ _ 1 = 50 mAdc r= mAdc = mAdc _ [, = i mAdc [, = 10 mAdc (pulse) (pulse) (pulse) Ip == 5.0 wAdc Minimum 0.540 Vde 0.660 Vdc 0.760 Vde 0.820 Vdc 0.870 Vde 75 Vde Maximum 0.620 Vde 0.740 Vde 0.860 Vde 0.920 Vdc 1.00 Vde _ Reverse Reverse Forward Characteristics Reverse Currant Reverse Current Junction Capacitance Recovery Time Recovery Time Recovery Time | Ie yao eal bat 1, 200'mad eas R R= Fok= Fok po made; Conditions Va = 50 Vde Ye = aywde F 1MHz 10 to 200 mAde; | 200 to 400 mAde;| t, = 100 nsec; A Veig = 50 mv (p-p) R,=100chms | Rp =100 ohms | t,=0.4 nsec Maximum 0.1 pAde 100 pAdc 2.5 pf 4 nsec 6 nsec 10 nsec Typical Forward Current ys Voltage Reverse Voltage vs. Reverse Current 0.002 .002 005 = 0.01 E Zz 02 5 5 08 aa oc ec 3 a 2 33 =x e 10 z $2 = 53 | : | s 6 =< 10 iZ 20 1 i Li 6 V_-~ FORWARD VOLTAGE (Vv) 12.3 465 6 7 8 9 101212131415 100 Vz REVERSE VOLTAGE (V} 140 130120110 100 90 80 70 60 50 40 30 20 10 0 100 Percent process conditioning* 1. High-temp storage 2. Thermal shock (glass strain) 3. Acceleration 4, Hermetic seal tests . Reverse bias . Measurement of specified parameter 4, Forward bias . Measurement of specified parameters . Lot rejection criteria based on (% OF PIV) inspection lots Lots proposed Inspection tests to Review of Non-TX ormed at fina or verify LTPD Groups Aand B Preparation assembly operation non-TX = | >) Group A | datafor [| _sfor (sealing) types Group B accept or reject Delivery Lots proposed for Inspection ar oF ink TX" types 100 Percent burn-in tests to verify (reverse and forward bias tests) LTPP _> Y 1. Measurement of specified parameters Group A | Group B Y to determine delta to determine delta Review of Group A and B data for lot accept or reject rejects from the Reverse and Y Forward bias tests. Order of procedure diagram for non-TX and TX types. TX Preparation for Delivery 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (637) 926-0404 FAX (617) 924-1235 5-10 PRINTED IN U.S.A,