SOT23 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 3 - JULY 1995 ✪
.
SERIES PAIR COMMON CATHODE COMMON ANODE
Device Type: BAS70-04 Device Type: BAS70-05 Device Type: BAS70-06
Partmarking Detail: 2Z Partmarking Detail: 2Z5 Partmarking Detail: 1Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage VBR 70 V IR=10µA
Reverse Leakage Current IR200 nA VR=50V
Forward Voltage VF410 mV IF=1mA
Forward Current IF15 mA VF=1V
Capacitance CT2.0 pF f=1MHz, VR=0
Effective Minority Lifetime
(1) τ100 ps f=54MHz, Ipk= 20mA
(Krakauer Test Method)
(1) Sample Test
For typical characteristics graphs see ZC2800E datasheet.
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SOT23
BAS70-04
BAS70-05
BAS70-06
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