1
1MBI2400U4D-120 IGBT Modules
IGBT MODULE (U series)
1200V / 2400A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=25°C 3600
A
Tc=80°C 2400
Ic pulse 1ms Tc=25°C 7200
Tc=80°C 4800
-Ic 2400
-Ic pulse 1ms 4800
Collector power dissipation Pc 1 device 14700 W
Junction temperature Tj 150 °C
Storage temperature Tstg -40 to +125 °C
Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 2500 VAC
Screw torque
Mounting (*2) 5.75
N·mMain Terminals (*2) 10
Sense Terminals (*2) 2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Symbols Conditions Characteristics Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 4800 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 2400mA 5.5 6.5 7.5 V
Collector-Emitter saturation voltage
VCE (sat)
(main terminal) VGE = 15V
IC = 2400A
Tj=25°C - 2.11 2.29
V
Tj=125°C - 2.31 -
VCE (sat)
(chip)
Tj=25°C - 1.90 2.05
Tj=125°C - 2.10 -
Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 270 - nF
Turn-on time ton VCC = 600V, IC = 2400A
VGE = ±15V, Tj = 125°C
Rgon = 1Ω, Rgoff = 0.5Ω
- 0.90 -
µs
tr - 0.50 -
Turn-off time toff - 0.80 -
tf - 0.20 -
Forward on voltage
VF
(main terminal) VGE = 0V
IF = 2400A
Tj=25°C - 1.86 2.04
V
Tj=125°C - 1.96 -
VF
(chip)
Tj=25°C - 1.65 1.80
Tj=125°C - 1.75 -
Reverse recovery time trr IF = 2400A - 0.35 - µs
Lead resistance, terminal-chip R lead - 0.089 - mΩ
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c) IGBT - - 0.0085
°C/WFWD - - 0.015
Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*3) - 0.004 -
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
1MBI2400U4D-120
2
IGBT Modules
Characteristics (Representative)
Tj= 125°C, chip
Tj=25°C,chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C,chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Tj= 25°C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
0.0 1.0 2.0 3.0 4.0 5.0
Collector current : Ic [A]Collector current : Ic [A]
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20 15V 12V
10V
8V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-Emitter voltage : VCE [V]
Tj=125°CTj=25°C
0
2
4
6
8
10
5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=4800A
Ic=2400A
Ic=1200A
1
10
100
1000
0 10 20 30
Capacitance : Cies, Coes, Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
200
400
600
800
1000
0 2000 4000 6000 8000 10000 12000
Gate charge : Qg [ nC ]
Collector-Emitter voltage : VCE [V]
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
VGE
VCE
3
3
IGBT Modules
1MBI2400U4D-120
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=1Ω, Rgoff=0.5Ω, Tj= 125°C
Vcc=600V, VGE=±15V, Rgon=1Ω, Rgoff=0.5Ω, Tj= 125°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=2400A,VGE=±15V, Tj= 125°C
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=2400A,VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 500 1000 1500 2000 2500 3000 3500 4000
Switching time : ton, tr, toff, tf [ us ]
Switching time : ton, tr, toff, tf [ us ]
Collector current : Ic [ A ]
toff
ton
tr
tf
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 2 4 6 8 10
Gate resistance : Rg [ Ω ]
tr
tf
toff
ton
0
100
200
300
400
500
600
700
800
0 500 1000 1500 2000 2500 3000 3500 4000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ] , Forward current : IF [ A ]
Eon
Eoff
Err
0
250
500
750
1000
1250
1500
1750
2000
2250
0 2 4 6 8 10
Gate resistance : Rg [ Ω ]
Eoff
Err
Eon
0
1000
2000
3000
4000
5000
6000
0 200 400 600 800 1000 1200 1400
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
4
1MBI2400U4D-120
4
IGBT Modules
Forward current vs. Forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=1Ω, Tj=125°C
Transient thermal resistance (max.)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Tj=25°C Tj=125°C
0
500
1000
1500
2000
2500
0 1000 2000 3000 4000
0.0
0.5
1.0
1.5
2.0
2.5
Reverse recovery time : trr [us]
Reverse recovery current : Irr [ A ]
Forward current : IF [ A ]
trr
Irr
0.0001
0.0010
0.0100
0.1000
0.001 0.010 0.100 1.000
Thermal resistanse : Rth (j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
5
5
IGBT Modules
1MBI2400U4D-120
Equivalent Circuit Schematic
Outline Drawings, mm
main emitter
main collector
C
E
sense emitter E
gate G
sense collector C
C
E
C
E
6
1MBI2400U4D-120 IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
http://store.iiic.cc/
