BC847CDLP 45V DUAL NPN SMALL SIGNAL TRANSISTOR Features Mechanical Data BVCEO > 45V Case: X2-DFN1310-6 Low profile 0.4mm high package for thin applications Nominal package height: 0.4mm Ultra-Small Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) UL Flammability Classification Rating 94V-0 Halogen and Antimony Free. "Green" Device (Note 3) Moisture Sensitivity: Level 1 per J-STD-020 Qualified to AEC-Q101 Standards for High Reliability Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0015 grams (approximate) X2-DFN1310-6 C B E E B C Device Schematic Top View Top View Ordering Information (Note 4) Part Number BC847CDLP-7 Notes: Marking 1M Reel Size (inches) 7 Tape Width (mm) 8 Quantity per Reel 3000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http"//www.diodes.com/products/packages.html. Marking Information 1M 1M = Product Type Marking Code (Top View) BC847CDLP Document number: DS30817 Rev. 7 - 2 1 of 6 www.diodes.com May 2013 (c) Diodes Incorporated BC847CDLP Maximum Ratings (@TA = +25C unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6 V IC 100 mA Symbol Value Unit PD 350 mW RJA 357 C/W TJ, TSTG -65 to +150 C Collector Current Thermal Characteristics - Total Device (@TA = +25C unless otherwise specified.) Characteristic Power Dissipation (Note 5) Total Device Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Note: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. Thermal Characteristics - Total Device 350 Note 5 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 BC847CDLP Document number: DS30817 Rev. 7 - 2 RJA = 357C/W 0 25 75 125 50 100 150 TA, AMBIENT TEMPERATURE (C) Figure 1 Power Dissipation vs. Ambient Temperature 2 of 6 www.diodes.com May 2013 (c) Diodes Incorporated BC847CDLP Electrical Characteristics (@TA = +25C unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic (Note 6) BVCBO 50 -- -- V IC = 100A, IB = 0 Collector-Emitter Breakdown Voltage BVCEO 45 -- -- V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6 -- -- V IE = 100A, IC = 0 hFE 420 650 800 -- VCE = 5.0V, IC = 2.0mA 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA DC Current Gain Test Condition Collector-Emitter Saturation Voltage VCE(sat) -- 55 130 Base-Emitter Saturation Voltage VBE(sat) -- 700 900 -- mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(on) 580 -- 660 -- 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA ICES -- -- 15 nA VCE = 50V Collector-Cutoff Current ICBO -- -- -- -- 15 5 nA A VCB = 30V VCB = 30V, TA = +150C Gain Bandwidth Product fT 100 -- -- MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO -- 2.0 -- pF VCB = 10V, f = 1.0MHz Collector-Cutoff Current Collector-Base Capacitance 6. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. Note: 1,400 0.25 IB = 8mA VCE = 5V 1,200 0.20 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) IB = 10mA 1,000 IB = 6mA 0.15 IB = 4mA 0.10 IB = 2mA 800 600 T A = 150C TA = 85C TA = 25C 400 T A = -55C 0.05 200 0 0 1 3 4 2 5 6 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 2 Typical Collector Current vs. Collector-Emitter Voltage BC847CDLP Document number: DS30817 Rev. 7 - 2 3 of 6 www.diodes.com 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3 Typical DC Current Gain vs. Collector Current May 2013 (c) Diodes Incorporated BC847CDLP VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.25 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.20 0.15 TA = 150C TA = 85C 0.10 0.05 TA = -55C 0 TA = 25C 0.01 1.0 0.8 T A = -55C TA = 25C 0.7 0.6 0.5 T A = 85C 0.4 TA = 150C 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 14 1.2 f = 1MHz IC/IB = 10 12 TA = 25C 1.0 TA = -55C 10 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VCE = 5V 0.9 0.8 0.6 0.4 TA = 85C 0.2 TA = 150C 8 Cibo 6 4 2 0 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 6 Typical Base-Emitter Saturation Voltage vs. Collector Current Cobo 0 25 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 7 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 300 VCE = 5V f = 100MHz 250 200 150 100 50 0 0 10 20 40 30 50 60 IC, COLLECTOR CURRENT (mA) Figure 8 Typical Gain-Bandwidth Product vs. Collector Current BC847CDLP Document number: DS30817 Rev. 7 - 2 70 4 of 6 www.diodes.com May 2013 (c) Diodes Incorporated BC847CDLP Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A1 A X2-DFN1310-6 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 A3 0.13 b 0.10 0.20 0.15 D 1.25 1.38 1.30 d 0.25 D2 0.30 0.50 0.40 E 0.95 1.075 1.00 e 0.35 E2 0.30 0.50 0.40 f 0.10 L 0.20 0.30 0.25 Z 0.05 All Dimensions in mm A3 Z R0 B D2 .15 0 E2 E d L e d f z D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. G2 X2 Dimensions G1 G2 G3 X1 X2 Y1 Y2 a b Y2 G1 b Y1 G3 BC847CDLP Document number: DS30817 Rev. 7 - 2 a X1 5 of 6 www.diodes.com Value (in mm) 0.16 0.17 0.15 0.52 0.20 0.52 0.375 0.09 0.06 May 2013 (c) Diodes Incorporated BC847CDLP IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2013, Diodes Incorporated www.diodes.com BC847CDLP Document number: DS30817 Rev. 7 - 2 6 of 6 www.diodes.com May 2013 (c) Diodes Incorporated