BC847CDLP
Document number: DS30817 Rev. 7 - 2
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BC847CDLP
1M
45V DUAL NPN SMALL SIGNAL TRANSISTOR
Features
BVCEO > 45V
Low profile 0.4mm high package for thin applications
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1310-6
Nominal package height: 0.4mm
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
Method 208
Weight: 0.0015 grams (approximate)
Ordering Information (Note 4)
Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
BC847CDLP-7 1M 7 8 3000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Top View
X2-DFN1310-6
C
B
B E
E C
Device Schematic
Top View
1M = Product Type Marking Code
(Top View)
e4
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Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 100 mA
Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Total Device PD 350 mW
Thermal Resistance, Junction to Ambient (Note 5) RθJA 357 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Note: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Thermal Characteristics – Total Device
0
50
100
50 100 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Figure 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
0
300
350
25 75 125
R°C/W
JA
= 357
Note 5
BC847CDLP
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Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 50 — — V IC = 100µA, IB = 0
Collector-Emitter Breakdown Voltage BVCEO 45 — — V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 100µA, IC = 0
DC Current Gain hFE 420 650 800 — VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage VCE(sat) — 55
130
250
600 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(sat) — 700
900 — mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage VBE(on) 580
—
660
—
700
770 mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current ICES — — 15 nA VCE = 50V
Collector-Cutoff Current ICBO —
—
—
—
15
5
nA
µA
VCB = 30V
VCB = 30V, TA = +150°C
Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 2.0 — pF VCB = 10V, f = 1.0MHz
Note: 6. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
CE
0
0.05
0.10
0.15
0.20
0.25
01234 56
I = 2mA
B
I = 4mA
B
I = 10mA
B
I = 6mA
B
I = 8mA
B
0
200
400
600
800
1,000
1,200
1,400
0.1 101100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Figure 3 Typical DC Current Gain vs. Collector Current
C
V = 5V
CE
T = -55°C
A
T = 85°C
A
T = 150°C
A
T = 25°C
A
BC847CDLP
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110100
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
C
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.05
0.10
0.15
0.20
0.25
0.1
0.01
I/I = 10
CB
T = -55°C
A
T = 85°C
A
T = 150°C
A
T = 25°C
A
110100
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Figure 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V = 5V
CE
T = -55°C
A
T = 85°C
A
T = 150°C
A
T = 25°C
A
110100
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
C
0
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
I/I = 10
CB
T = 150°C
A
T = -55°C
A
T = 85°C
A
T = 25°C
A
Figure 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
Figure 7 Typical Capacitance Characteristics
R
0
2
4
6
8
10
12
14
05101520
25
C
ibo
C
obo
f = 1MHz
I , COLLECTOR CURRENT (mA)
Figure 8 Typical Gain-Bandwidth Product
vs. Collector Current
C
00
50
100
150
200
250
300
10 20 30 40 50 60 70
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
f = 100MHz
CE
BC847CDLP
Document number: DS30817 Rev. 7 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN1310-6
Dim Min Max Typ
A 0.40
A1 0 0.05 0.02
A3 0.13
b 0.10 0.20 0.15
D 1.25 1.38 1.30
d 0.25
D2 0.30 0.50 0.40
E 0.95 1.075 1.00
e 0.35
E2 0.30 0.50 0.40
f 0.10
L 0.20 0.30 0.25
Z 0.05
All Dimensions in mm
Dimensions Value (in mm)
G1 0.16
G2 0.17
G3 0.15
X1 0.52
X2 0.20
Y1 0.52
Y2 0.375
a 0.09
b 0.06
AA1
A3
E
B
L
D
D2
E2
d
e
d
f
Z
z
R0.150
b
G3 a
G2 X2
Y2
Y1
G1
X1
BC847CDLP
Document number: DS30817 Rev. 7 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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