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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications
Power Amplifier Applications
High voltage: VCEO = 120 V
High transition frequency: fT = 120 MHz (typ.)
Small flat package
PC = 1 to 2 W (mounted on a ceramic substrate)
Complementary to 2SC2881
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 800 mA
Base current IB 160 mA
PC 500
Collector power dissipation PC
(Note 1)
1000
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
Start of commercial production
1980-07
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 120 V, IE = 0 0.1 μA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 V
Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 V
DC current gain
hFE
(Note 3)
VCE = 5 V, IC = 100 mA 80 240
Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA 1.0 V
Base-emitter voltage VBE VCE = 5 V, IC = 500 mA 1.0 V
Transition frequency fT VCE = 5 V, IC = 100 mA 120 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 30 pF
Note 3: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Note 4: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8
June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
D
Part No. (or abbreviation code)
Lot No.
Note 4
Characteristics indicator
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Safe Operating Area
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE – IC
DC current gain hFE
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
Common emitter
VCE = 5 V
3
500
30 100010
100
10
100 300
300
1000
Ta = 100°C
25
25
50
30
0 0.8 0.40.2
0
0.4
0.8
Common emitter
VCE = 5 V
0.6
0.6
0.2
1.0 1.2
Ta = 100°C 25 25
3
0.1
30 300 10
0.05
Common emitter
IC/IB = 10
0.01
100
0.3
0.5
Ta = 100°C
25
25
0.03
1000
0 16 8 4
0
400
800
600
12
200 IB = 1 mA
10
0
7
5
4
3
2
Common emitter
Ta = 25°C
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
0.3
1
101 100 300
3
30
10
100
5
50
IC max (pulse)*
IC max (continuous)
100 ms*
1 ms*
10 ms*
VCEO max
30 3
300
3000
1000
500
DC
operation
Ta = 25°C
0
0
0.6
0.2
0.8
0.4
1.2
1.0
120 80 100 40 6020 140 160
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
(1)
(2)
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RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
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