J/SST201 Series
Vishay Siliconix
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
1
N-Channel JFETs
J201 SST201
J202 SST202
J204 SST204
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J/SST201 −0.3 to −1.5 −40 0.5 0.2
J/SST202 −0.8 to −4−40 1 0.9
J/SST204 −0.3 to −2−25 0.5 0.2
FEATURES BENEFITS APPLICATIONS
DLow Cutoff Voltage: J201 <1.5 V
DHigh Input Impedance
DVery Low Noise
DHigh Gain: AV = 80 @ 20 mA
DFull Performance from Low Voltage
Power Supply: Down to 1.5 V
DLow Signal Loss/System Error
DHigh System Sensitivity
DHigh Quality Low-Level Signal
Amplification
DHigh-Gain, Low-Noise Amplifiers
DLow-Current, Low-Voltage
Battery-Powered Amplifiers
DInfrared Detector Amplifiers
DUltra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
Top View
J201
J202
J204
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
J/SST201 Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201 J/SST202 J/SST204c
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = −1 mA , VDS = 0 V −40 −40 −25
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −1.5 −0.8 −4−0.3 −2
V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 0.2 1 0.9 4.5 0.2 3 mA
Gate Reverse Current
IGSS
VGS = −20 V, VDS = 0 V −2−100 −100 −100 pA
Gate Reverse Current IGSS TA = 125_C−1 nA
Gate Operating Current IGVDG = 10 V, ID = 0.1 mA −2
pA
Drain Cutoff Current ID(off) VDS = 15 V, VGS = −5 V 2pA
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance gfs VDS = 15 V, VGS = 0 V
f = 1 kHz 0.5 1 0.5 mS
Common-Source
Input Capacitance Ciss VDS = 15 V, VGS = 0 V
4.5
pF
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V
,
VGS = 0 V
f = 1 MHz 1.3
pF
Equivalent Input Noise Voltage enVDS = 10 V, VGS = 0 V
f = 1 kHz 6nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA, NH
b. Pulse test: PW v300 ms duty cycle v3%.
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
J/SST201 Series
Vishay Siliconix
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate Leakage Current
2
012168420
1.6
1.2
0.8
0.4
0
Output Characteristics
VDS − Drain-Source Voltage (V)
VGS = 0 V
−0.6 V
−0.9 V
−0.3 V
VGS(off) = −1.5 V
−1.2 V
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
01530
VDG − Drain-Gate Voltage (V)
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
ID = 100 mA
ID = 500 mA
IG @ ID = 500 mA
ID = 100 mA
0
8
6
4
2
0−5−4−3−2−1
5
4
1
3
2
0
VGS(off) − Gate-Source Cutoff Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
1500
0−3−5−4−2−1
1200
900
600
300
0
0.01 0.1 1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
01216420
360
160
80
0
Output Characteristics
Common-Source Forward Transconductance
vs. Drain Current
ID − Drain Current (mA)VGS(off) − Gate-Source Cutoff Voltage (V)
VDS − Drain-Source Voltage (V)
TA = −55_C
125_C
−0.2 V
−0.4 V
−0.1 V
−0.3 V
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
rDS
gos
6 1.2
240
8
VGS(off) = −0.7 V
25_C
−0.5 V
VDS = 10 V
f = 1 kHz
VGS(off) = −1.5 V
VGS = 0 V
gos − Output Conductance (mS)
IDSS − Saturation Drain Current (mA)
rDS(on) − Drain-Source On-Resistance ( Ω )
gfs − Forward Transconductance (mS)
ID − Drain Current (mA)
ID − Drain Current (mA)
IG − Gate Leakage (A)
gfs − Forward Transconductance (mS)
J/SST201 Series
Vishay Siliconix
www.vishay.com
4
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
2
0−1.2 −1.6 −2−0.8−0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
VGS − Gate-Source Voltage (V)
TA = −55_C
125_C
25_C
VDS = 10 VVGS(off) = −1.5 V
500
0−0.3−0.2−0.1 −0.4 −0.5
400
300
200
100
0
Transfer Characteristics
VGS − Gate-Source Voltage (V)
TA = −55_C
125_C
25_C
VDS = 10 VVGS(off) = −0.7 V
0.1 10.01
4
−1.2 −2−1.6−0.8−0.40
3.2
2.4
1.6
0.8
0
0.01 0.1 1
200
160
120
80
40
0
2000
1600
1200
800
400
0
ID − Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
Transconductance vs. Gate-Source Voltage
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
ID − Drain Current (mA)
25_C
VGS(off) = −0.7 V
−1.5 V
VGS(off) = −0.7 V
−1.5 V
1.5
0−0.3 −0.4−0.2−0.1 −0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
25_C
VDS = 10 V
f = 1 kHz
VGS(off) = −0.7 V VDS = 10 V
f = 1 kHz
VGS(off) = −1.5 V
AV+
gfs RL
1)RLgos
Assume VDD = 15 V, VDS = 5 V
RL+
10 V
ID
gfs − Forward Transconductance (mS)
gfs − Forward Transconductance (mS)rDS(on) − Drain-Source On-Resistance ( Ω ) ID − Drain Current (mA)
ID − Drain Current (mA)
AV − Voltage Gain
J/SST201 Series
Vishay Siliconix
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
0−12 −16 −20−8−4
8
6
4
2
0
5
0−12 −20−16−8−4
4
3
2
1
0
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
VGS − Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
VGS − Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
10 100 1 k 100 k10 k
20
16
12
8
4
0
Output Conductance vs. Drain Current
ID − Drain Current (mA)
TA = −55_C
125_C
Equivalent Input Noise Voltage vs. Frequency
f − Frequency (Hz)
VDS = 10 V
ID @ 100 mA
VGS = 0 V
3
2.4
1.8
0.8
0.4
0
0.01 0.1 1
25_C
Output Characteristics
300
0 0.5
240
180
120
60
0
VDS − Drain-Source Voltage (V)
0.1 0.2 0.3 0.4
Output Characteristics
1.0
0 1.0
0.8
0.6
0.4
0.2
0
VDS − Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS(off) = −0.7 V VGS = 0 V
−0.1
−0.2
−0.3
−0.4
−0.5
VGS(off) = −1.5 V
VGS = 0 V
−0.3
−0.6
−0.9
−1.2
VDS = 10 V
f = 1 kHz
VGS(off) = −1.5 V
en − Noise Voltage nV / Hz
ID − Drain Current (mA)
ID − Drain Current (µA) gos − Output Conductance (µS) Ciss − Input Capacitance (pF)
Crss − Reverse Feedback Capacitance (pF)
