MS2221 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features * * * * * * * 1235 - 1365 MHz 50 VOLTS 15:1 VSWR CAPABILITY INPUT / OUTPUT MATCHING POUT = 270 WATTS GP = 6.3 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2221 is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions. Internal impedance matching provides optimum performance across the entire frequency band. ABSOLUTE MAXIMUM RATI RATINGS NGS (Tcase = 25C) Symbol PDISS IC VCC TJ TSTG Parameter Power Dissipation Device Current Collector Supply Voltage Junction Temperature Storage Temperature Value Unit 730 18.75 55 250 -65 to +200 W A V C C 0.24 C/W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7116 Rev - 11-2002 MS2221 ELECTRICAL SPECIFICATIONS (Tcase = 25 25C) STATIC Symbol BVCBO BVEBO BVCES ICES HFE Test Conditions IC = 50 mA IE = 15 mA IC = 50 mA VCE = 50 V VCE = 5 V IE = 0 mA IC = 0 mA IC = 5 A Min. Value Typ. Max. Unit 65 3.0 65 --10 ----------- ------30 100 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT C GP f = 1235 - 1365MHz PIN = 63W VCC = 50V 270 --- --- W f = 1235 - 1365MHz PIN = 63W VCC = 50V 40 --- --- % f = 1235 - 1365MHz PIN = 63W VCC = 50V 6.3 --- --- dB Conditions Pulse Width = 50 S Duty Cycle = 4% IMPEDANCE DATA DATA ZIN() ZCL() 1235 MHz 2.5 + j5.0 2.0 - j2.5 1300 MHz 1.5 + j3.5 2.5 - j2.5 1365 MHz 1.0 + j3.5 2.0 - j3.0 FREQ PIN = 63 W VCC = 50 V 053-7116 Rev - 11-2002 MS2221 PACKAGE MECHANICAL DATA 053-7116 Rev - 11-2002