053-7116 Rev - 11-2002
MS2221
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS2221 is a high power transistor specifically designed
for L–Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse
width and duty cycle pulse conditions. Internal impedance
matching provides optimum performance across the entire
frequency band.
ABSOLUTE MAXIMUM RATI
ABSOLUTE MAXIMUM RATIABSOLUTE MAXIMUM RATI
ABSOLUTE MAXIMUM RATINGS
NGS NGS
NGS (Tcase = 25°
°°
°C)
S
mbol Paramete
alue Unit
PDISS Power Dissi
ation 730 W
IC Device Current 18.75 A
VCC Collector Supply Voltage 55 V
TJ Junction Temperature 250 °
°°
°C
TSTG Storage Temperature -65 to +200 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 0.24 °
°°
°C/W
Features
FeaturesFeatures
Features
• 1235 - 1365 MHz
• 50 VOLTS
• 15:1 VSWR CAPABILITY
• INPUT / OUTPUT MATCHING
• POUT = 270 WATTS
• GP = 6.3 dB MINIMUM
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS