36V Rad Hard Dual Precision Operational Amplifier ISL70227SEH Features The ISL70227SEH is a high precision dual operational amplifier featuring very low noise, low offset voltage, low input bias current and low temperature drift. These features plus its radiation tolerance make the ISL70227SEH the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of precision, low noise, and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts. * Electrically Screened to DLA SMD# 5962-12223 Applications for these amplifiers include precision and analytical instrumentation, active filters, and power supply controls. * Low Input Voltage Offset . . . . . . . . . . . . . . . . . . . . . . 10V, Typ. The ISL70227SEH is available in a 10 lead hermetic ceramic flatpack and operates over the extended temperature range of -55C to +125C. * No Phase Reversal Applications * Power Supply Control * Industrial Controls * Active Filter Blocks * Data Acquisition * Wide Supply Range . . . . . . . . . . . . . . . . . . . .4.5V to 42V Max. * Very Low Voltage Noise . . . . . . . . . . . . . . . . . .2.5nV/Hz, Typ. * Gain-bandwidth Product . . . . . . . . . . . . . . . . . . . . . . . . 10MHz * Superb Offset Drift . . . . . . . . . . . . . . . . . . . . . . . . 1V/C, Max * Operating Temperature Range. . . . . . . . . . .-55C to +125C * Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1nA, Typ. * Unity Gain Stable * Radiation Tolerance - SEL/SEB LETTH . . . . . . . . . . . . . . . . . . . . . . 86MeV*cm2/mg - High Dose Rate. . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si) - Low Dose Rate . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)* * Product capability established by initial characterization. The EH version is acceptance tested on a wafer by wafer basis to 50krad(Si) at low dose rate. Related Literature * AN1669, "ISL70227SRH Evaluation Board User's Guide" * AN1756, "Single Events Effects Testing of the ISL70227RH, Dual 36V Rad Hard Precision Operational Amplifiers" R3 25 243 V+ 20 GROUNDED VIN R1 ISL70227SEH R2 + 95.3 232 C2 680pF V- OUTPUT VOS (V) 15 BIASED 10 5 C1 0 0 1.5nF Sallen-Key Low Pass Filter (1MHz) FIGURE 1. TYPICAL APPLICATION August 24, 2012 FN7958.1 1 10 20 30 40 50 60 70 80 90 100 TOTAL DOSE (krad(Si)) FIGURE 2. OFFSET VOLTAGE vs LOW DOSE RADIATION CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2012. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. ISL70227SEH Ordering Information ORDERING NUMBER (Notes 1, 2) PART MARKING TEMP RANGE (C) PACKAGE (Pb-free) PKG. DWG. # 5962R1222301VXA ISL70227SEHVF -55 to +125 10 Ld Flatpack K10.A ISL70227SEHF/PROTO ISL70227 SEHF/PROTO -55 to +125 10 Ld Flatpack K10.A 5962R1222301V9A ISL70227SEHVX -55 to +125 Die ISL70227SEHX/SAMPLE ISL70227SEHVX/SAMPLE -55 to +125 Die ISL70227MHEVAL1Z Evaluation Board NOTES: 1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2. For Moisture Sensitivity Level (MSL), please see device information page for ISL70227SEH. For more information on MSL please see techbrief TB363. Pin Configuration ISL70227SEH (10 LD FLATPACK) TOP VIEW OUTA 1 10 -IN A 2 9 OUT B 8 -IN B 7 +IN B 6 NC +IN A 3 NC 4 V- 5 - + + - V+ Pin Descriptions PIN NUMBER PIN NAME EQUIVALENT CIRCUIT DESCRIPTION 3 +IN A Circuit 1 Amplifier A non-inverting input 5 V- Circuit 3 Negative power supply 7 +IN B Circuit 1 Amplifier B non-inverting input 8 -IN B Circuit 1 Amplifier B inverting input 9 OUT B Circuit 2 Amplifier B output 10 V+ Circuit 3 Positive power supply 1 OUT A Circuit 2 Amplifier A output 2 -IN A Circuit 1 Amplifier A inverting input 4, 6 NC - Not Connected - This pin is not electrically connected internally. V+ IN- V+ V- V- CIRCUIT 2 2 CAPACITIVELY TRIGGERED ESD CLAMP OUT IN+ CIRCUIT 1 V+ V- CIRCUIT 3 FN7958.1 August 24, 2012 ISL70227SEH Absolute Maximum Ratings Thermal Information Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V Maximum Supply Voltage (LET = 86.4 MeV*cm2/mg) . . . . . . . . . . . . . 36V Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5V Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V Max/Min Input Current for Input Voltage >V+ or <V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Output Short-Circuit Duration (1 output at a Time) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite ESD Tolerance Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 300V Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V Di-electrically Isolated PR40 Process . . . . . . . . . . . . . . . . . . . Latch-up free Thermal Resistance (Typical) JA (C/W) JC (C/W) 10 Ld Ceramic Flatpack (Notes 3, 4) . . . . . 130 20 Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65C to +150C Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Recommended Operating Conditions Ambient Operating Temperature Range . . . . . . . . . . . . . .-55C to +125C Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150C Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V (2.25V) to 30V (15V) CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 3. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 4. For JC, the "case temp" location is the center of the ceramic on the package underside. Electrical Specifications VS 15V, VCM = 0, VO = 0V, RL = Open, TA = +25C, unless otherwise noted. Boldface limits apply over the operating temperature range, -55C to +125C. PARAMETER VOS DESCRIPTION CONDITIONS Offset Voltage MIN (Note 5) TYP MAX (Note 5) UNIT -75 -10 75 V 100 V -100 TCVOS Offset Voltage Drift -1 .1 1 V/C IOS Input Offset Current -10 1 10 nA 12 nA 10 nA -12 12 nA -13 13 V -12 12 V -12 IB VCM CMRR PSRR Input Bias Current Input Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio -10 Guaranteed by CMRR VCM = -13V to +13V 115 VCM = -12V to +12V 115 VS = 2.25V to 5V 110 VS = 3V to 15V 110 1 120 dB dB 117 dB dB AVOL Open-Loop Gain VO = -13V to +13V RL = 10k to ground 1000 1500 V/mV VOH Output Voltage High RL = 10k to ground 13.5 13.65 V 13.2 RL = 2k to ground 13.4 V 13.5 V 13.1 VOL Output Voltage Low RL = 10k to ground RL = 2k to ground 3 V -13.65 -13.5 -13.5 V -13.2 V -13.4 V -13.1 V FN7958.1 August 24, 2012 ISL70227SEH Electrical Specifications VS 15V, VCM = 0, VO = 0V, RL = Open, TA = +25C, unless otherwise noted. Boldface limits apply over the operating temperature range, -55C to +125C. (Continued) PARAMETER IS ISC VSUPPLY DESCRIPTION CONDITIONS MIN (Note 5) Supply Current/Amplifier TYP 2.2 Short-Circuit RL = 0 to ground Supply Voltage Range Guaranteed by PSRR MAX (Note 5) 2.8 mA 3.7 mA 45 2.25 UNIT mA 15 V AC SPECIFICATIONS GBW Gain Bandwidth Product 10 MHz enp-p Voltage Noise 0.1Hz to 10Hz 85 nVP-P en Voltage Noise Density f = 10Hz 3 nV/Hz en Voltage Noise Density f = 100Hz 2.8 nV/Hz en Voltage Noise Density f = 1kHz 2.5 nV/Hz en Voltage Noise Density f = 10kHz 2.5 nV/Hz in Current Noise Density f = 10kHz 0.4 pA/Hz Total Harmonic Distortion + Noise 1kHz, G = 1, VO = 3.5VRMS, RL = 2k 0.00022 % 3.6 V/s THD + N TRANSIENT RESPONSE SR Slew Rate AV = 10, RL = 2k, VO = 4VP-P 2.5 2.0 tr, tf, Small Signal V/s Rise Time 10% to 90% of VOUT AV = -1, VOUT = 100mVP-P, Rf = Rg = 2k, RL = 2k to VCM 36 Fall Time 90% to 10% of VOUT AV = -1, VOUT = 100mVP-P, Rf = Rg = 2k, RL = 2k to VCM 38 Settling Time to 0.1% 10V Step; 10% to VOUT AV = -1, VOUT = 10VP-P, Rg = Rf = 10k, RL = 2k to VCM 3.4 s Settling Time to 0.01% 10V Step; 10% to VOUT AV = -1, VOUT = 10VP-P, RL = 2k to VCM 3.8 s tOL Output Overload Recovery Time AV = 100, VIN = 0.2V, RL = 2k to VCM 1.7 s OS+ Positive Overshoot AV = 1, VOUT = 10VP-P, Rf = 0 RL = 2k to VCM 20 % AV = 1, VOUT = 10VP-P, Rf = 0 RL = 2k to VCM 20 ts OS- Negative Overshoot 4 100 ns 100 ns 100 ns 100 ns 35 % % 35 % FN7958.1 August 24, 2012 ISL70227SEH Electrical Specifications VS 15V, VCM = 0, VO = 0V, RL = Open, TA= +25C, unless otherwise noted. Boldface limits apply over a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. PARAMETER VOS DESCRIPTION CONDITIONS Offset Voltage MIN (Note 5) TYP MAX (Note 5) UNIT -75 -10 75 V 100 V -100 TCVOS Offset Voltage Drift -1 .1 1 V/C IOS Input Offset Current -10 1 10 nA 25 nA 10 nA -25 25 nA -13 13 V -12 12 V -25 IB VCM CMRR PSRR Input Bias Current Input Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio -10 Guaranteed by CMRR VCM = -13V to +13V 115 VCM = -12V to +12V 115 VS = 2.25V to 5V 110 VS = 3V to 15V 110 1 120 dB dB 117 dB dB AVOL Open-Loop Gain VO = -13V to +13V RL = 10k to ground 1000 1500 V/mV VOH Output Voltage High RL = 10k to ground 13.5 13.65 V 13.2 RL = 2k to ground 13.4 V 13.5 V 13.1 VOL Output Voltage Low RL = 10k to ground -13.65 RL = 2k to ground IS ISC VSUPPLY V -13.5 Supply Current/Amplifier 2.2 Short-Circuit RL = 0 to ground Supply Voltage Range Guaranteed by PSRR -13.5 V -13.2 V -13.4 V -13.1 V 2.8 mA 3.7 mA 45 2.25 mA 15 V AC SPECIFICATIONS GBW Gain Bandwidth Product 10 MHz enp-p Voltage Noise 0.1Hz to 10Hz 85 nVP-P en Voltage Noise Density f = 10Hz 3 nV/Hz en Voltage Noise Density f = 100Hz 2.8 nV/Hz en Voltage Noise Density f = 1kHz 2.5 nV/Hz en Voltage Noise Density f = 10kHz 2.5 nV/Hz in Current Noise Density f = 10kHz 0.4 pA/Hz Total Harmonic Distortion + Noise 1kHz, G = 1, VO = 3.5VRMS, RL = 2k 0.00022 % THD + N 5 FN7958.1 August 24, 2012 ISL70227SEH Electrical Specifications VS 15V, VCM = 0, VO = 0V, RL = Open, TA= +25C, unless otherwise noted. Boldface limits apply over a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) PARAMETER DESCRIPTION CONDITIONS MIN (Note 5) TYP 2.5 3.6 MAX (Note 5) UNIT TRANSIENT RESPONSE SR Slew Rate AV = 10, RL = 2k, VO = 4VP-P V/s 2.0 tr, tf, Small Signal V/s Rise Time 10% to 90% of VOUT AV = -1, VOUT = 100mVP-P, Rf = Rg = 2k, RL = 2k to VCM Fall Time 90% to 10% of VOUT AV = -1, VOUT = 100mVP-P, Rf = Rg = 2k, RL = 2k to VCM Settling Time to 0.1% 10V Step; 10% to VOUT AV = -1, VOUT = 10VP-P, Rg = Rf = 10k, RL = 2k to VCM 3.4 s Settling Time to 0.01% 10V Step; 10% to VOUT AV = -1, VOUT = 10VP-P, RL = 2k to VCM 3.8 s tOL Output Overload Recovery Time AV = 100, VIN = 0.2V, RL = 2k to VCM 1.7 s OS+ Positive Overshoot AV = 1, VOUT = 10VP-P, Rf = 0 RL = 2k to VCM 20 % AV = 1, VOUT = 10VP-P, Rf = 0 RL = 2k to VCM 20 ts OS- Negative Overshoot Electrical Specifications temperature range, -55C to +125C. PARAMETER VOS 36 100 ns 100 ns 100 ns 100 ns 35 % % 35 % VS 5V, VCM = 0, VO = 0V, TA = +25C, unless otherwise noted. Boldface limits apply over the operating DESCRIPTION CONDITIONS MIN (Note 5) TYP MAX (Note 5) UNIT Offset Voltage -10 V TCVOS Offset Voltage Drift .1 V/C IOS Input Offset Current 1 nA IB Input Bias Current 1 nA CMRR Common-Mode Rejection Ratio VCM = -3V to +3V 120 dB PSRR Power Supply Rejection Ratio VS = 2.25V to 5V 125 dB AVOL Open-Loop Gain VO = -3V to +3V RL = 10k to ground 1500 V/mV VOH Output Voltage High RL = 10k to ground 3.65 V RL = 2k to ground 3.5 V RL = 10k to ground -3.65 V RL = 2k to ground -3.5 V VOL Output Voltage Low IS Supply Current/Amplifier 2.2 mA ISC Short-Circuit 45 mA 6 FN7958.1 August 24, 2012 ISL70227SEH Electrical Specifications VS 5V, VCM = 0, VO = 0V, TA = +25C, unless otherwise noted. Boldface limits apply over the operating temperature range, -55C to +125C. (Continued) PARAMETER DESCRIPTION CONDITIONS MIN (Note 5) TYP MAX (Note 5) UNIT AC SPECIFICATIONS GBW THD + N Gain Bandwidth Product Total Harmonic Distortion + Noise 1kHz, G = 1, Vo = 2.5VRMS, RL = 2k 10 MHz 0.0034 % 3.6 V/s TRANSIENT RESPONSE SR tr, tf, Small Signal ts Slew Rate AV = 10, RL = 2kOH Rise Time 10% to 90% of VOUT AV = -1, VOUT = 100mVP-P, Rf = Rg = 2k, RL = 2k to VCM 36 ns Fall Time 90% to 10% of VOUT AV = -1, VOUT = 100mVP-P, Rf = Rg = 2k, RL = 2k to VCM 38 ns Settling Time to 0.1% AV = -1, VOUT = 4VP-P, Rf = Rg = 2k, RL = 2k to VCM 1.6 s Settling Time to 0.01% AV = -1, VOUT = 4VP-P, Rf = Rg = 2k, RL = 2k to VCM 4.2 s NOTE: 5. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. High Dose Rate Post Radiation Characteristics VS 15V, VCM = 0V, VO = 0V, RL = Open, TA = +25C, unless otherwise noted. This data is typical test data post radiation exposure at a rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. PARAMETER DESCRIPTION CONDITIONS 50k RAD 75k RAD 100k RAD UNIT VOS Offset Voltage 34 30 30 V IOS Input Offset Current -1 -1 -2 nA IB Input Bias Current -1 -2 -3 nA CMRR Common-Mode Rejection Ration VCM = -13V to +13V 155 155 155 dB PSRR Power Supply Rejection Ratio VS = 2.25V to 15V 116 116 116 dB AVOL Open-Loop Gain VO = -13V to +13V RL = 10k to ground 3500 3500 3500 V/mV 2.2 2.2 2.2 mA IS Supply Current/Amplifier 7 FN7958.1 August 24, 2012 ISL70227SEH Low Dose Rate Post Radiation Characteristics VS 15V, VCM = 0V, VO = 0V, RL = Open, TA = +25C, unless otherwise noted. This data is typical test data post radiation exposure at a rate of 10mrad(Si)/s. This data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed . 5 25 0 GROUNDED GROUNDED -5 15 IB+ (nA) VOS (V) 20 BIASED 10 -10 -15 5 BIASED -20 0 0 10 20 30 40 50 60 70 80 90 -25 0 100 10 20 TOTAL DOSE (krad(Si)) 40 50 60 70 80 90 100 TOTAL DOSE (krad(Si)) FIGURE 3. OFFSET VOLTAGE vs RADIATION FIGURE 4. POSITIVE INPUT BIAS CURRENT vs RADIATION 0 0 GROUNDED -5 GROUNDED -5 BIASED -10 -15 IIO (nA) IB- (nA) 30 BIASED -20 -10 -15 -20 -25 0 10 20 30 40 50 60 70 80 90 -25 100 0 10 20 TOTAL DOSE (krad(Si)) 30 40 50 60 70 80 90 100 TOTAL DOSE (krad(Si)) FIGURE 6. OFFSET CURRENT vs RADIATION FIGURE 5. NEGATIVE INPUT BIAS CURRENT vs RADIATION SUPPLY CURRENT (mA) 10 BIASED 5 GROUNDED 0 0 10 20 30 40 50 60 70 80 90 100 TOTAL DOSE (krad(Si)) FIGURE 7. TOTAL SUPPLY CURRENT vs RADIATION 8 FN7958.1 August 24, 2012 ISL70227SEH Typical Performance Curves VS = 15V, VCM = 0V, RL = Open, TA = +25C, unless otherwise specified. 100 INPUT NOISE VOLTAGE (nV/Hz) INPUT NOISE VOLTAGE (nV) 100 80 60 40 20 0 -20 V+ = 38V RL = 10k CL = 3.5pF Rg = 10, Rf = 100k AV = 10,000 -40 -60 -80 -100 0 1 2 3 4 5 6 7 8 9 VS = 19V AV = 1 10 1 0.1 10 1 10 TIME (s) FIGURE 8. INPUT NOISE VOLTAGE 0.1Hz TO 10Hz 10 PSRR (dB ) INPUT NOISE CURRENT (pA/Hz) VS = 19V AV = 1 1 1 10 100 1k 10k 100k 130 120 110 100 90 80 70 60 50 40 30 20 10 0 -10 RL = INF CL = 5.25pF AV = +1 VS = 1VP-P PSRR+ and PSRR- VS = 15V 10 100 1k 10k 100k 10M 1M FIGURE 11. PSRR vs FREQUENCY, V S = 5V, 15V VS = 5V 70 VS = 2.25V 60 50 VS = 15V VOS (V) CMRR (dB) 100k FREQUENCY (Hz) FIGURE 10. INPUT NOISE CURRENT SPECTRAL DENSITY RL = INF CL = 5.25pF AV = +1 VCM = 1VP-P 100 10k PSRR+ AND PSRR- VS = 5V FREQUENCY (Hz) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 -10 10 1k FIGURE 9. INPUT NOISE VOLTAGE SPECTRAL DENSITY 100 0.1 0.1 100 FREQUENCY (Hz) VS = 15V 40 30 20 10 1k 10k 100k 1M 10M FREQUENCY (Hz) FIGURE 12. CMRR vs FREQUENCY, VS = 2.25, 5V, 15V 9 0 -60 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120 140 FIGURE 13. VOS vs TEMPERATURE FN7958.1 August 24, 2012 ISL70227SEH Typical Performance Curves VS = 15V, VCM = 0V, RL = Open, TA = +25C, unless otherwise specified. (Continued) 1.0 0 -0.1 0.8 -0.2 VS = 15V -0.3 0.4 IB- (nA) IB+ (nA) 0.6 VS = 15V IB+ 0.2 -0.4 -0.5 IB- -0.6 0 -0.7 -0.2 -0.8 -0.4 -60 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120 -0.9 -60 140 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120 140 100 120 140 FIGURE 15. IB- vs TEMPERATURE FIGURE 14. IB+ vs TEMPERATURE 3.5 0 -0.2 3.0 VS = 15V 2.5 IIO -0.6 ICC (mA) IIO (nA) -0.4 -0.8 VS = 15V 2.0 1.5 -1.0 1.0 -1.2 0.5 -1.4 -60 -40 -20 0 20 40 60 80 100 120 ICC 0 -60 140 -40 -20 TEMPERATURE (C) -12.2 13.1 -12.3 13.0 -12.4 12.6 -12.5 VOH @ RL = 100k VOUT (V) VOUT (V) 12.7 VOH @ RL = 2k -12.6 AV = 10, VIN = 1.31V VS = 15V 12.4 12.3 -40 -20 0 20 40 60 TEMPERATURE (C) 80 100 FIGURE 18. VOH vs TEMPERATURE, VS = 15V 10 60 80 120 AV = 10, VIN = - 1.31V VS = 15V VOL @ RL = 2k -12.7 -12.8 -12.9 12.5 12.2 -60 40 FIGURE 17. SUPPLY CURRENT vs TEMPERATURE 13.2 12.8 20 TEMPERATURE (C) FIGURE 16. IOS vs TEMPERATURE 12.9 0 VOL @ RL = 100k -13.0 -13.1 -13.2 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (C) FIGURE 19. VOL vs TEMPERATURE, VS = 15V FN7958.1 August 24, 2012 ISL70227SEH 14 13 12 11 10 9 8 7 6 5 4 AV = 10, 3 VIN = 1.31V 2 VS = 15V 1 0 0.0001 0.001 VS = 15V, VCM = 0V, RL = Open, TA = +25C, unless otherwise specified. (Continued) OPEN LOOP GAIN (dB)/PHASE () VOH (V) Typical Performance Curves VOUT (V) -55C VOUT (V) 0C VOUT (V) +25C VOUT (V) +125C 0.01 0.1 1 10 OUTPUT CURRENT (mA) 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 0.0001 FIGURE 21. OPEN-LOOP GAIN, PHASE vs FREQUENCY, R L = 10k, CL = 10pF AV = 10, VIN = - 1.31V VS = 15V OPEN LOOP GAIN (dB)/PHASE() VOL (V) FIGURE 20. VOH vs OUTPUT CURRENT VOUT (V) +125C VOUT (V) +25C VOUT (V) 0C VOUT (V) -55C 0.001 0.01 0.1 200 180 160 140 PHASE 120 100 80 60 40 GAIN 20 0 -20 R = 10k L -40 CL = 10pF -60 -80 SIMULATION -100 0.1m 1m 10m 100m 1 10 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) 1 10 200 180 160 140 120 100 80 60 40 20 0 -20 R = 10k L -40 CL = 100pF -60 SIMULATION -80 -100 0.1m 1m 10m 100m 1 OUTPUT CURRENT (mA) 21 AV = 1000 Rg = 100, Rf = 100k AV = 10 0 17 16 15 13 AV = 1 12 Rg = OPEN, Rf = 0 1k -60C 14 Rg = 10k, Rf = 100k -10 100 GAIN (dB) GAIN (dB) VS = 15V CL = 3.5pF RL = INF VOUT = 100mVP-P 30 10k 100k 1M FREQUENCY (Hz) 10M 100M FIGURE 24. FREQUENCY RESPONSE vs CLOSED LOOP GAIN 11 +25C +125C 19 18 AV = 100 10 +130C 20 Rg = 1k, Rf = 100k 50 20 10 100 1k 10k 100k 1M 10M 100M FIGURE 23. OPEN-LOOP GAIN, PHASE vs FREQUENCY, R L = 10k, CL = 100pF 70 40 GAIN FREQUENCY (Hz) FIGURE 22. VOL vs OUTPUT CURRENT 60 PHASE AV = 10, VOUT = 100mVP-P, VS = +-15V, RL = 2k 11 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FIGURE 25. GAIN vs FREQUENCY vs TEMPERATURE FN7958.1 August 24, 2012 ISL70227SEH Typical Performance Curves 15 2 Rf = Rg = 100k 13 RL = 10k Rf = Rg = 10k 11 1 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) VS = 15V, VCM = 0V, RL = Open, TA = +25C, unless otherwise specified. (Continued) Rf = Rg = 1k 9 7 5 3 VS = 15V 1 RL = 10k -1 CL = 3.5pF AV = +2 -3 VOUT = 100mVP-P -5 10k 1k Rf = Rg = 100 100k 1M 10M RL = 1k 0 -1 RL = 499 -2 -3 CL = 3.5pF AV = +1 VOUT = 100mVP-P -4 -5 1k 100M RL = 100 VS = 15V 10k 100k 1M FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 26. FREQUENCY RESPONSE vs FEEDBACK RESISTANCE Rf/Rg NORMALIZED GAIN (dB) 6 5 4 NORMALIZED GAIN (dB) VS = 15V RL = 10k AV = +1 VOUT = 100mVP-P CL = 1000pF CL = 220pF 3 CL = 100pF 2 CL = 25.5pF 1 0 -1 -3 1k 10k 100k 1M FREQUENCY (Hz) 10M VS = 5V -1 VS = 15V CL = 3.5pF RL = 10k AV = +1 VOUT = 100mVP-P -2 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) FIGURE 29. GAIN vs FREQUENCY vs SUPPLY VOLTAGE 6 6 5 5 4 4 VS = 15V CL = 3.5pF AV = 1 Rf = 0 Rg = inf VOUT = 10VP-P 3 2 1 0 LARGE SIGNAL (V) LARGE SIGNAL (V) 0 -3 100M FIGURE 28. GAIN vs FREQUENCY vs CL 1 -2 -3 RL = 2k RL = 10k -4 0 5 10 15 TIME (s) 20 25 30 FIGURE 30. LARGE SIGNAL 10V STEP RESPONSE, VS = 15V 12 OUTPUT +125C 3 2 OUTPUT +25C 1 OUTPUT -55C 0 -1 VS = 15V RL = 2k AV = 1 Rf = 0 Rg = inf VOUT = 10VP-P -2 -3 -4 -5 -5 -6 100M VS = 2.25V CL = 3.5pF -2 10M FIGURE 27. GAIN vs FREQUENCY vs RL 1 7 RL = 49.9 -6 0 10 20 TIME (s) 30 40 FIGURE 31. LARGE SIGNAL 10V STEP RESPONSE, VS = 15V vs TEMPERATURE FN7958.1 August 24, 2012 ISL70227SEH Typical Performance Curves VS = 15V, VCM = 0V, RL = Open, TA = +25C, unless otherwise specified. (Continued) 80 2.4 60 VS = 15V, RL = 2k, 10k 0.8 0.4 0 -0.4 VS = 5V, RL = 2k, 10k -0.8 -1.2 CL = 3.5pF AV = 1 VOUT = 4VP-P -1.6 -2.0 -2.4 0 5 10 15 30 35 -0.26 13 0.22 11 0.08 9 7 5 OUTPUT 5 10 15 20 25 TIME (s) 30 35 INPUT (V) VS = 15V RL = 10k CL = 3.5pF AV = 100 Rf = 100k, Rg = 1k VIN = 200mVP-P 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.26 OUTPUT (V) INPUT (V) -0.02 -0.20 0 FIGURE 33. SMALL SIGNAL TRANSIENT RESPONSE, VS = 5V, 15V INPUT -0.18 RL = 2k CL = 3.5pF AV = 1 VOUT = 100mVP-P 40 80 15 -0.14 20 TIME (ms) 0.06 -0.10 VS = 5V, 15V 0 40 FIGURE 32. LARGE SIGNAL TRANSIENT RESPONSE vs RL, VS = 5V, 15V -0.06 20 60 20 25 TIME (s) 0.02 40 2 OUTPUT 0.04 0.10 0.06 3 0.02 1 -0.02 FIGURE 34. POSITIVE OUTPUT OVERLOAD RESPONSE TIME, VS = 15V VS = 15V RL = 10k CL = 3.5pF AV = 100 Rf = 100k, Rg = 1k VIN = 200mVP-P -2 INPUT -10 -4 -6 -8 -12 -0.06 0 -1 40 0 OUTPUT (V) 1.6 1.2 SMALL SIGNAL (mV) LARGE SIGNAL (V) 2.0 5 10 15 20 25 TIME (s) 30 35 -14 40 FIGURE 35. NEGATIVE OUTPUT OVERLOAD RESPONSE TIME, VS = 15V 90 80 OVERSHOOT (%) 70 60 VS = 15V RL = 10k AV = 1 VOUT = 100mVP-P 50 40 O RS VE 30 20 O HO OT HO RS VE + OT - 10 0 10 100 1000 CAPACITANCE (pF) 10000 FIGURE 36. % OVERSHOOT vs LOAD CAPACITANCE, VS = 15V 13 FN7958.1 August 24, 2012 ISL70227SEH Applications Information Functional Description V+ The ISL70227SEH is a dual, low noise 10MHz BW precision op amp fabricated in a new precision 40V complementary bipolar DI process. A super-beta NPN input stage with input bias current cancellation provides low input bias current (1nA typical), low input offset voltage (10V typ), low input noise voltage (3nV/Hz), and low 1/f noise corner frequency (5Hz). These amplifiers also feature high open loop gain (1500V/mV) for excellent CMRR (120dB) and THD+N performance (0.0002% @ 3.5VRMS, 1kHz into 2k). A complimentary bipolar output stage enables high capacitive load drive without external compensation. Operating Voltage Range VINVIN+ RIN- - RIN+ + VOUT RL V- FIGURE 38. INPUT ESD DIODE CURRENT LIMITING - DIFFERENTIAL INPUT Output Current Limiting The devices are designed to operate over the 4.5V (2.25V) to 36V (18V) range and are fully characterized at 30V (15V). Parameter variation with operating voltage is shown in the "Typical Performance Curves" beginning on page 9. The output current is internally limited to approximately 45mA at +25C and can withstand a short circuit to either rail as long as the power dissipation limits are not exceeded. This applies to only one amplifier at a time. Continuous operation under these conditions may degrade long term reliability. Input ESD Diode Protection Output Phase Reversal The input terminals (IN+ and IN-) have internal ESD protection diodes to the positive and negative supply rails, and an additional anti-parallel diode pair across the inputs (see Figures 37 and 38). Output phase reversal is a change of polarity in the amplifier transfer function when the input voltage exceeds the supply voltage. The ISL70227SEH are immune to output phase reversal, even when the input voltage is 1V beyond the supplies. V+ Power Dissipation VIN RIN VOUT + RL V- FIGURE 37. INPUT ESD DIODE CURRENT LIMITING - UNITY GAIN For unity gain applications (see Figure 37) where the output is connected directly to the non-inverting input a current limiting resistor (RIN) will be needed under the following conditions to protect the anti-parallel differential input protection diodes. * The amplifier input is supplied from a low impedance source. * The input voltage rate-of-rise (dV/dt) exceeds the maximum slew rate of the amplifier (3.6V/s). If the output lags far enough behind the input, the anti-parallel input diodes can conduct. For example, if an input pulse ramps from 0V to +10V in 1s, then the output of the ISL70227SEH will reach only +3.6V (slew rate = 3.6V/s) while the input is at 10V, The input differential voltage of 6.4V will force input ESD diodes to conduct, dumping the input current directly into the output stage and the load. The resulting current flow can cause permanent damage to the ESD diodes. The ESD diodes are rated to 20mA, and in the previous example, setting RIN to 1k resistor (see Figure 37) would limit the current to <6.4mA, and provide additional protection up to 20V at the input. In applications where one or both amplifier input terminals are at risk of exposure to high voltage, current limiting resistors may be needed at each input terminal (see Figure 38 RIN+, RIN-) to limit current through the power supply ESD diodes to 20mA. 14 It is possible to exceed the +150C maximum junction temperatures under certain load and power supply conditions. It is therefore important to calculate the maximum junction temperature (TJMAX) for all applications to determine if power supply voltages, load conditions, or package type need to be modified to remain in the safe operating area. These parameters are related using Equation 1: (EQ. 1) T JMAX = T MAX + JA xPD MAXTOTAL where: * PDMAXTOTAL is the sum of the maximum power dissipation of each amplifier in the package (PDMAX) * PDMAX for each amplifier can be calculated using Equation 2: V OUTMAX PD MAX = V S x I qMAX + ( V S - V OUTMAX ) x -----------------------R (EQ. 2) L where: * TMAX = Maximum ambient temperature * JA = Thermal resistance of the package * PDMAX = Maximum power dissipation of one amplifier * VS = Total supply voltage * IqMAX = Maximum quiescent supply current of one amplifier * VOUTMAX = Maximum output voltage swing of the application * RL = Load resistance FN7958.1 August 24, 2012 ISL70227SEH Package Characteristics Weight of Packaged Device 0. 4029 grams (Typical) TOP METALLIZATION Type: AlCu (99.5%/0.5%) Thickness: 30kA BACKSIDE FINISH Lid Characteristics Silicon Finish: Gold Case Isolation to Any Lead: 20 x 109 (min) Die Characteristics Die Dimensions 1565m x 2125m (62mils x 84mils) Thickness: 355m 25m (14 mils 1 mil) PROCESS Dielectrically Isolated Complementary Bipolar - PR40 ASSEMBLY RELATED INFORMATION SUBSTRATE POTENTIAL Floating ADDITIONAL INFORMATION Interface Materials WORST CASE CURRENT DENSITY GLASSIVATION < 2 x 105 A/cm2 Type: Nitrox Thickness: 15kA Metallization Mask Layout V+ OUT_A -IN_A PLACE HOLDER OUT_B -IN_B +IN_A +IN_B V- 15 FN7958.1 August 24, 2012 ISL70227SEH TABLE 1. DIE LAYOUT X-Y COORDINATES PAD NAME PAD NUMBER X (m) Y (m) dX (m) dY (m) BOND WIRES PER PAD OUT_A 11 0 1530 70 70 1 -IN_A 13 -20.5 976 70 70 1 +IN_A 14 -20.5 732 70 70 1 V- 9 0 0 70 70 1 +IN_B 16 1272.5 595.5 70 70 1 -IN_B 15 1272.5 839.5 70 70 1 OUT_B 12 1259.5 993.5 70 70 1 V+ 10 1295.5 1708 70 70 1 NOTE: 6. Origin of coordinates is the centroid of pad 9. For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 16 FN7958.1 August 24, 2012 ISL70227SEH Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you have the latest Rev. DATE REVISION August 24, 2012 FN7958.1 CHANGE Initial release. Products Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The Company's products address some of the industry's fastest growing markets, such as, flat panel displays, cell phones, handheld products, and notebooks. Intersil's product families address power management and analog signal processing functions. Go to www.intersil.com/products for a complete list of Intersil product families. For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device information page on intersil.com: ISL70227SEH To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff FITs are available from our website at: http://rel.intersil.com/reports/search.php 17 FN7958.1 August 24, 2012 ISL70227SEH Ceramic Metal Seal Flatpack Packages (Flatpack) K10.A MIL-STD-1835 CDFP3-F10 (F-4A, CONFIGURATION B) 10 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE e A INCHES A -A- D -BPIN NO. 1 ID AREA b E1 0.004 M H A-B S S1 D S 0.036 Q M H A-B S D S C E -D- A -C- -HL E2 E3 SEATING AND BASE PLANE c1 L E3 BASE METAL MIN MAX MIN MAX NOTES A 0.045 0.115 1.14 2.92 - b 0.015 0.022 0.38 0.56 - b1 0.015 0.019 0.38 0.48 - c 0.004 0.009 0.10 0.23 - c1 0.004 0.006 0.10 D - 0.290 6.10 0.15 - 7.37 3 E 0.240 0.260 - 0.280 E2 0.125 - 3.18 - - E3 0.030 - 0.76 - 7 0.015 0.20 k (c) - E1 e LEAD FINISH MILLIMETERS SYMBOL - 0.050 BSC 0.008 6.60 - 7.11 3 1.27 BSC - 0.38 2 L 0.250 0.370 6.35 9.40 - Q 0.026 0.045 0.66 1.14 8 S1 0.005 - 0.13 M - 0.0015 - 6 b1 M M (b) SECTION A-A N 10 - 0.04 10 Rev. 0 3/07 NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. Alternately, a tab (dimension k) may be used to identify pin one. 2. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply. 3. This dimension allows for off-center lid, meniscus, and glass overrun. 4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 5. N is the maximum number of terminal positions. 6. Measure dimension S1 at all four corners. 7. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the leads. 8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. 18 FN7958.1 August 24, 2012