©2004 Fairchild Semiconductor Corporation
May 2004
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
8A, 600V Stealth™ Diode
General Description
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth™ dio des optimiz ed for low loss performance in
high frequ ency hard swi tc hed applicat io ns. The
Stealth™ fami l y ex hi bi ts low re ver se recov er y cur r ent
(IRRM) and ex ceptionall y so ft recover y un der typica l
operating conditions.
This device is intended for use as a free w heeling or
boost diode in power supplies and other power
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery
minimiz es r in gi ng , ex pandi ng the range of c onditions
under which the diode may be operated without the use
of additional snubber ci rc ui try. Conside r us ing t he
Stealth™ diode with an SMPS IGBT to provide the
most efficient and hi ghest pow er density de si gn at
lower cost .
Formerl y dev el opmental type TA 49409.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . .tb / ta > 2.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . .trr < 25ns
• Operating Temperature . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energ y Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
•Motor Drive FWD
• SMPS FWD
• Snubber Diode
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Volt age 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 147oC) 8 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
PDPower Dissipation 85 W
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334 300
260 °C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
(FLANGE) CATHODE
ANODE
JEDEC STYLE TO-262JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
N/C
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-263AB
Package Symbol
©2004 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
R860P2 ISL9R860P2 TO-220AC - -
R860S2 ISL9R860S2 TO-262 - -
R860S3S ISL9R860S3ST TO-263AB 24mm 800
Symbol Parameter Tes t Conditions Min Typ Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
TC = 125°C - - 1.0 mA
VFInstantaneous Forward Voltage IF = 8A TC = 25°C - 2.0 2.4 V
TC = 125°C - 1.6 2.0 V
CJJunction Capacitance VR = 10V, IF = 0A - 30 - pF
trr Reverse Recovery Time IF = 1A, dIF/ dt = 100A/µs, VR = 30V - 18 25 ns
IF = 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns
trr Reverse Recovery Time IF = 8A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-28-ns
IRRM Maximum Reverse Recovery Current - 3.2 - A
QRR Reverse Recovery Charge - 50 - nC
trr Reverse Recovery Time IF = 8A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-77-ns
S Softness Factor (tb/ta)-3.7-
IRRM Maximum Reverse Recovery Current - 3.4 - A
QRR Reverse Recovery Charge - 150 - nC
trr Reverse Recovery Time IF = 8A,
dIF/dt = 600A/µs,
VR = 390V,
TC = 125°C
-53-ns
S Softness Factor (tb/ta)-2.5-
IRRM Maximum Reverse Recovery Current - 6.5 - A
QRR Reverse Recovery Charge 195 - nC
dIM/dt Maximum di/dt during tb- 500 - A/µs
RθJC Thermal Resistance Junction to Case - - 1.75 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-263 62 °C/W
©2004 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURR ENT (A)
0 0.5 0.75 1 2.50.25 1.5 2 2.25
0
2
4
6
8
10
12
14
16
2.75
25oC
175oC
150oC
100oC
125oC
1.751.25
VR, REVERSE VO LTAGE (V)
IR, REVERSE CURRENT (µA)
100
10
1
100 200 300 500 600400
0.1
25oC
175oC
150oC
125oC
100oC
IF, FORWARD CURRENT (A)
0
0
10
20
30
40
50
60
10 16
t, RECOVERY TIMES (ns)
70
80
2 4 6 8 12 14
VR = 390V, TJ = 125°C
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
10
20
30
40
50
60
700 1000
t, RECOVERY TIMES (ns)
200 300 400 500 600 800 900
70
80
90 VR = 390V, TJ = 125°C
tb AT IF = 16A, 8A, 4A
ta AT IF = 16A, 8A, 4A
IF, FORWARD CURRENT (A)
0
2
3
4
5
6
7
8
16
IRRM, MAX REVERSE RECOVERY CURRENT (A)
dIF/dt = 800A/µs
dIF/dt = 500A/µs
dIF/dt = 200A/µs
VR = 390V, TJ = 125°C
9
10
11
2468101214
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
2
4
6
8
10
700 1000
IRRM, MAX REVERSE RECOVERY CURRENT (A)
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
12
14
200 300 400 500 600 800 900
©2004 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
Figure 7. Reverse Recovery Softness Fact or vs dIF/dt Figure 8. Reverse Recovery Charge vs dIF/dt
Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
100
1
2
3
4
5
6
700 1000
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
S, REVERSE RECOVERY SOFTNESS FACTOR
200 300 400 500 600 800 900
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
50
100
150
200
250
300
350 VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
QRR, REVERSE RECOVERY CHARGE (nC)
100 700 1000200 300 400 500 600 800 900
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0
200
400
600
800
1000
1200
0.1 100101
4
0150 155 165140 175160
6
8
10
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
170145
2
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01 10-4 10-3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING OR DER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
©2004 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
Test Circuits and Waveforms
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPL I TU D E AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
Q1
I = 1A
L = 40mH
VDD = 50V
IV
t0t1t2
IL
VAVL
t
IL
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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