HEXFET® Power MOSFET
PD - 95259
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
09/21/04
SO-8
VDSS = 30V
RDS(on) = 0.10Ω
IRF9956PbF
Description
Recommended upgrade: IRF7303 or IRF7313
Lower profile/smaller equivalent: IRF7503
Symbol Maximum Units
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ± 20
TA = 25°C 3.5
TA = 70°C 2.8
Pulsed Drain Current IDM 16
Continuous Source Current (Diode Conduction) IS1.7
TA = 25°C 2.0
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 44 mJ
Avalanche Current IAR 2.0 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-AmbientRθJA 62.5 °C/W
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
ID
PD
V
W
D
1
D
1
D
2
D
2
G
1
S
2
G
2
S1
Top View
8
1
2
3
45
6
7
lGeneration V Technology
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lVery Low Gate Charge and
Switching Losses
lFully Avalanche Rated
lLead-Free
IRF9956PbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 0.82 1.2 V TJ = 25°C, IS = 1.25A, VGS = 0V
trr Reverse Recovery Time 27 53 ns TJ = 25°C, IF = 1.25A
Qrr Reverse RecoveryCharge 28 57 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
16
1.7
A
S
D
G
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 22mH
RG = 25Ω, IAS = 2.0A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.015 V/°C Reference to 25°C, ID = 1mA
0.06 0.10 VGS = 10V, ID = 2.2A
0.09 0.20 VGS = 4.5V, ID = 1.0A
VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 12 S VDS = 15V, ID = 3.5A
2.0 VDS = 24V, VGS = 0V
25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage 100 VGS = 24V
Gate-to-Source Reverse Leakage -100 VGS = -24V
QgTotal Gate Charge 6.9 14 ID = 1.8A
Qgs Gate-to-Source Charge 1.0 2.0 nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge 1.8 3.5 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time 6.2 12 VDD = 10V
trRise Time 8.8 18 ID = 1.0A
td(off) Turn-Off Delay Time 13 26 RG = 6.0Ω
tfFall Time 3.0 6.0 RD = 10Ω
Ciss Input Capacitance 190 VGS = 0V
Coss Output Capacitance 120 pF VDS = 15V
Crss Reverse Transfer Capacitance 61 = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRF9956PbF
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltag e (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-t o-Source Curr ent (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Sour ce Current (A)
20µs PU LSE WIDTH
T = 150°C
J
3.0 V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V )
D
I , Drain-to-Source Curr ent ( A)
A
V = 10V
20µs PULSE WIDTH
DS
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.
4
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF9956PbF
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 4. Normalized On-Resistance
Vs. Temperature
0
20
40
60
80
100
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 0.89A
1.6A
BOTTOM 2.0A
D
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
2.2A
0
.00
0
.02
0
.04
0
.06
0
.08
0
.10
0
.12
0
.14
0
.16
03691215
A
I = 3.5A
D
GS
V , Gate-to-S ource Vol ta g e (V )
RDS (on) , Drain-to-Source On Resistance (Ω)
0
.04
0
.06
0
.08
0
.10
0
.12
0 2 4 6 8 10 12
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF9956PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
50
100
150
200
250
300
350
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s ds gd
C
iss
C
oss
C
rss
0246810
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D1.8A V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Durati on ( s ec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF9956PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMET ERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS TO JEDEC OUT LINE M S-012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010 ].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006 ].
8X 1.78 [.070
]
DATE CODE (YW W)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YE AR
PART N UMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DE S IGNAT E S LEAD-FRE E
PROD UCT (OPTION AL)
A = ASSEMB LY SITE CODE
IRF9956PbF
330. 0 0
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTE S :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EI A-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
