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©2015 Fairchild Semiconductor Corporation
FDB0105N407L Rev.C
FDB0105N407L N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 13 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.84V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -9 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 50 A 0.6 0.8
mΩVGS = 6 V, ID = 42 A 0.8 1.1
VGS = 10 V, ID = 50 A, TJ = 150°C 1 1.8
gFS Forward Transconductance VDS = 10 V, ID = 50 A 286 S
Ciss Input Capacitance VDS = 20 V, VGS = 0 V,
f = 1 MHz
16500 23100 pF
Coss Output Capacitance 5335 7470 pF
Crss Reverse Transfer Capacitance 973 1365 pF
RgGate Resistance 2.6 Ω
td(on) Turn-On Delay Time
VDD = 20 V, ID = 50 A,
VGS = 10 V, RGEN = 6 Ω
45 73 ns
trRise Time 69 110 ns
td(off) Turn-Off Delay Time 117 186 ns
tfFall Time 61 97 ns
QgTotal Gate Charge VDD = 20 V, ID = 50 A,
VGS = 10 V
208 291 nC
Qgs Gate to Source Gate Charge 64 nC
Qgd Gate to Drain “Miller” Charge 29 nC
ISMaximum Continuous Drain to Source Diode Forward Current - - 460 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 2540 A
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 50 A (Note 2) 0.8 1.2 V
trr Reverse Recovery Time IF = 50 A, di/dt = 100 A/μs 107 171 ns
Qrr Reverse Recovery Charge 119 191 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper.
b) 62.5 °C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 1109 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 86 A, VDD = 10 V, VGS = 36 V. 100% test at L = 0.1 mH, IAS = 125 A.
4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.