© 2008 IXYS CORPORATION, All rights reserved DS97526F(12/08)
N-Channel Enhancement Mode
Avalanche Rated,High dv/dt, Low trr
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 900 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ900 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 25N90 25 A
IDM TC= 25°C, pulse width limited by TJM 25N90 100 A
ID25 TC = 25°C 26N90 26 A
IDM TC= 25°C, pulse width limited by TJM 26N90 104 A
IAR TC= 25°C 25N90 25 A
IAR TC= 25°C 26N90 26 A
EAR TC= 25°C64mJ
EAS TC= 25°C3J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 5 V/ns
PDTC= 25°C 600 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
G
D
S
S
miniBLOC, SOT-227
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
HiPerFETTM Power MOSFETs
Single Die MOSFET
Features
zInternational standard package
zminiBLOC, with Aluminium nitride
isolation
zLow RDS(ON) HDMOSTM process
zAvalanche Rated
zLow package inductance
zFast intrinsic diode
Advantages
zLow gate drive requirement
zHigh power density
Applications:
zSwitched-mode and resonant-mode
power supplies
zDC-DC Converters
zBattery chargers
zDC choppers
zTemperature & lighting controls
IXFN25N90
IXFN26N90
VDSS ID25 RDS(on)
900V 25A 330mΩΩ
ΩΩ
Ω
900V 26A 300mΩΩ
ΩΩ
Ω
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 900 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = 0.8 • VDSS 100 μA
VGS = 0V TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 25N90 330 mΩ
26N90 300 mΩ
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN25N90
IXFN26N90
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • IDSS, Note 1 18 28 S
Ciss 8.7 10.8 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 800 1000 pF
Crss 300 375 pF
td(on) Resistive Switching Times 60 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 35 ns
td(off) RG= 1Ω (External) 130 ns
tf 24 ns
Qg(on) 240 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 56 nC
Qgd 107 nC
RthJC 0.21 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 25N90 25 A
26N90 26 A
ISM Repetitive, pulse width limited by TJM 25N90 100 A
26N90 104 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.4 μC
IRM 10 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = IS, -di/dt = 100A/μs
VR = 100V
SOT-227B Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFN25N90
IXFN26N90
VDS - Volts
0246810
ID - Amperes
0
5
10
15
20
VDS - Volts
0 5 10 15 20 25
ID - Amperes
0
5
10
15
20
25
30
TJ - Degrees C
25 50 75 100 125 150
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VGS - Volts
234567
ID - Amperes
0
5
10
15
20
25
30
ID - Amperes
0 1020304050
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VCE - Volts
0 4 8 12 16 20
ID - Amperes
0
10
20
30
40
50
6V
5V
VGS = 10V
VGS = 9V
8V
TJ = 25°C VGS = 9V
8V
7V
TJ = 25°C
TJ = 125°C
4V 4V
TJ = 25°C
TJ = 125°C
5V
6V
4V
5V
6V
VGS = 9V
8V
7V
TJ = 125OC
VGS = 10V
7V
ID = 26A
ID = 13A
TJ = 25OC
Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
Figure 4. Admittance Curves
6. RDS(ON) Normalized to 0.5 ID25 value vs. TJ
Fig. 6. R
DS(on)
Norm alized to 0.5 I
D25
Value vs.
Junction Tem perat ur e
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
25 50 75 100 125 150
T
J
- Degrees C ent igrad e
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 26A
I
D
= 13A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN25N90
IXFN26N90
IXYS REF: F_26N90(9X)12-09-08
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 11. Transient Thermal Resistance
VSD - Vo lt s
0.0 0.3 0.6 0.9 1.2 1.5
ID - Amperes
0
5
10
15
20
25
30
35
40
45
50
Case T e m peratue - oC
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
5
10
15
20
25
30
Pulse Width - Seconds
10-4 10-3 10-2 10-1 100101
R(th)JC - K/W
0.001
0.010
0.100
VDS - Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
100
1000
10000
Gate Charge - nC
0 50 100 150 200 250 300 350
VGS - Volts
0
3
6
9
12
15
Crss
Coss
Ciss
VDS = 500 V
ID = 13 A
IG = 10 m A f = 1 MH z
IXFN26N90
TJ = 125oC
TJ = 25oC
0.300
IXFN25N90
20000
Figure 7. Gate Charge Figure 8. Capacitance Curves
