APL502J 500V 52A 0.090 LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). * Higher FBSOA D G * Popular SOT-227 Package * SOA Rated * Higher Power Dissipation S S ISOTOP (R) 7 2 T-2 SO "UL Recognized" file #145592 D * RoHS Compliant G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage Pulsed Drain Current VGS VGSM PD 1 500 Volts Amps 208 Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 568 Watts 4.55 W/C Linear Derating Factor TJ,TSTG UNIT 52 Continuous Drain Current @ TC = 25C IDM APL502J -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 52 (Repetitive and Non-Repetitive) EAR Volts Amps 50 1 mJ 3000 4 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 500 Volts ID(ON) On State Drain Current 52 Amps RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x RDS(ON) Max, VGS = 15V) 2 TYP MAX 0.09 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) 250 Drain-Source On-State Resistance (VGS = 15V, 26A) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT Ohms A 100 nA 4 Volts 050-5897 Rev C 11-2013 Symbol APL502J DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 7600 9000 VDS = 25V f = 1 MHz 1280 1810 620 930 VGS = 15V 13 26 VDD = 0.5 VDSS 24 48 ID = 52A @ 25C 58 87 RG = 0.6 14 17 TYP MAX Test Conditions VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic RJC MIN Junction to Case VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) WT 2500 Package Weight Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. SOA1 Safe Operating Area Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 4 Volts 1.03 oz 29.2 g 10 lb*in 1.1 N*m 300 Watts See MIL-STD-750 Method 3471 Starting Tj = +25C, L = 2.22mH, RG = 25, Peak IL = 52A Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.7 0.15 0.5 Note: 0.10 P DM ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.20 0.3 0 0.1 0.05 10-5 t1 t2 Transient Thermal Impedance RC Model 0.05 t Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION scaled to 100% of size for data sheet. TC (C) 0.052 0.155 0.0126 Dissipated Power (Watts) 0.061 0.423 ZEXT 050-5897 Rev C 11-2013 TJ (C) 67.45 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL TJ (C) C/W VDS = 400 V, IDS = 0.75A, t = 20 sec., TC = 60C 1 .22 UNIT TC (C) Typical Performance Curves VGS=10V, 15 V 100 8V 80 APL502J 120 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 120 VGS=10, 15V 100 8V 80 7.5 V 60 7V 6.5 V 40 6V 20 5.5 V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS 1.30 80 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V GS 1.20 60 = 10V @ 26A VGS=10V 1.10 1.00 40 0.90 TJ = +125C 20 TJ = -55C TJ = +25C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0.70 1.15 60 50 VGS=20V 0.80 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 40 1.05 30 1.00 20 0.95 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I = 26A D V 2.0 GS = 12V 1.1 1.0 1.5 0.9 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5897 Rev C 0.8 11-2016 1.0 100 IDM 10 Rds(on) 100S 1mS 1 10mS T = 125C J 0.1 13S 100mS DC line T = 75C C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, FORWARD SAFE OPERATING AREA IDM 10 100 APL502J 400 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 400 13S Rds(on) 100S 1mS T = 150 C J 1 10mS T = 25C C Scaling for Different Case & Junction DC line Temperatures: 0.1 I =I D D (TC = 25C) 100mS *(T - T )/125 C J 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, MAXIMUM FORWARD SAFE OPERATING AREA 30,000 Ciss 5,000 Coss C, CAPACITANCE (pF) 10,000 1,000 Crss 500 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 12, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) * Source 050-5897 Rev C 11-2016 30.1 (1.185) 30.3 (1.193) 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Drain * Emitter terminals are shorte d internally. Current handlin g capability is equal for either Source terminal . 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters Gate APL502J Disclaimer: 050-5897 Rev C 11-2016 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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