MUR420S - MUR460S Taiwan Semiconductor 4A, 200V - 600V Surface Mount Ultrafast Power Rectifier FEATURES KEY PARAMETERS Glass passivated junction Ideal for automated placement Built-in strain relief Ultrafast recovery time for high efficiency Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF(AV) 4 A VRRM 200 - 600 V IFSM 75 A TJ MAX 175 C Package DO-214AB (SMC) Configuration Single die High frequency rectification Freewheeling application Switching mode converters and inverters in computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.25 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER SYMBOL Marking code on the device MUR420S MUR440S MUR460S MUR420S MUR440S MUR460S UNIT Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Maximum DC blocking voltage VDC 200 400 600 V Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature IF(AV) 4 A IFSM 75 A TJ - 55 to +175 C Storage temperature TSTG - 55 to +175 C 1 Version:E1903 MUR420S - MUR460S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance per diode RJA 45 C/W Junction-to-case thermal resistance per diode RJC 8.5 C/W ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) Reverse current @ rated VR (2) per diode MUR420S MUR440S MUR460S MUR420S MUR440S MUR460S MUR420S MUR440S MUR460S MUR420S MUR440S MUR460S Junction capacitance Reverse recovery time MUR420S MUR440S MUR460S SYMBOL IF = 4A, TJ = 25C VF IF = 4A, TJ = 150C VF TJ = 25C IR TJ = 150C IR 1 MHz, VR=4.0V CJ IF=0.5A , IR=1.0A IRR=0.25A trr TYP. MAX. UNIT - 0.875 V - 1.250 V - 0.710 V - 1.050 V - 5 A - 10 A - 150 A - 250 A 65 - pF - 25 ns - 50 ns Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:E1903 MUR420S - MUR460S Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. SUFFIX MUR4xxS (Note 1,2) PACKING CODE SUFFIX PACKING CODE PACKAGE PACKING R7 SMC 850 / 7" Plastic reel R6 SMC 3,000 / 13" Paper reel SMC 3,000 / 13" Plastic reel V7 Matrix SMC 850 / 7" Plastic reel V6 Matrix SMC 3,000 / 13" Plastic reel M6 H G Note : 1. "xx" defines voltage from 50V (MUR42S) to 600V (MUR460S) 2. Only V6 and V7 are all green compound (halogen free) EXAMPLE EXAMPLE P/N PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX DESCRIPTION MUR420SHR7G MUR420S H R7 G AEC-Q101 qualified Green compound 3 Version:E1903 MUR420S - MUR460S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 JUNCTION CAPACITANCE (pF) 4 2 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 0 0 25 50 75 100 125 CASE TEMPERATURE 150 10 f=1.0MHz Vsig=50m Vp-p 1 175 0.1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) 10 TJ=150C 0.1 TJ =25C 0.001 0 20 40 60 100 Fig.4 Typical Forward Characteristics 100 0.01 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 1 1 (C) 80 100 100 10 MUR460S UF1DLW 1 10 TJ=125C 0.1 TJ=25C (A) AVERAGE FORWARD CURRENT (A) 6 TJ=150C 1 0.01 TJ=25C Pulse width 0.001 0.3 0.1 0 0.4 0.4 0.5 0.6 0.8 0.7 0.8 0.9 1.2 1 1.6 1.1 2 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 Version:E1903 1.2 MUR420S - MUR460S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) Fig.5 Maximum Non-repetitive Forward Surge Current 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram 5 Version:E1903 MUR420S - MUR460S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) Unit (mm) DIM. Unit (inch) Min. Max. Min. Max. A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 3.30 0.130 B 2.50 0.098 C 6.80 0.268 D 4.40 0.173 E 9.40 0.370 MARKING DIAGRAM Matrix SMC SMC P/N =Marking Code G =Green Compound YW =Date Code F =Factory Code 6 Version:E1903 MUR420S - MUR460S Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version:E1903